Transcript
CM400HA-24A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™ A-Series Module
400 Amperes/1200 Volts
H
G
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F
D
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W - DIA. (4 TYP.)
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y P Q
E
C
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x
N
M
L
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C B A
R U - THD. (2 TYP.)
V -THD. (2 TYP.)
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E
E
Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking
C
G
Outline Drawing and Circuit Diagram Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
N
0.39
10.0
A
4.25
108.0
B
3.66
93.0
P
0.39
10.0
16.0
Q
0.51
13.0
R
0.33
8.5
S
1.42
36.0
C
0.63
D
0.30
7.5 30C0686.eps
E
0.69
17.5
F
1.14
29.0
T
1.02
25.8
U
M6 Metric
M6 M4
G
0.79
20.0
H
0.94
24.0
V
M4 Metric 0.256
6.5
J
0.31
7.9
W
K
0.24
6.0
X
0.79
20.0
Y
0.35
9.0
L
2.44
62.0
M
1.89
48.0
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Applications: £ DC Chopper £ Inverter £ UPS £ Forklift Ordering Information: Example: Select the complete part module number you desire from the table below i.e. CM400HA-24A is a 1200V (VCES), 400 Ampere Single IGBTMOD™ Power Module. Type
Current Rating Amperes
VCES Volts (x 50)
CM
400
24
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HA-24A Single IGBTMOD™ A-Series Module 400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings
Symbol
CM400HA-24A
Units
Tj
–40 to 150
°C
Junction Temperature Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES
1200
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Amperes
ICM
800**
Amperes
IE
400
Amperes
IC
Peak Collector Current
Volts
400
Collector Current (DC, TC = 87°C*) Emitter Current*** (TC = 25°C) Peak Emitter Current***
IEM
800**
Amperes
Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C)
PC
2350
Watts
Mounting Torque, M6 Main Terminal
—
40
in-lb
Mounting Torque, M6 Mounting
—
40
in-lb
Mounting Torque, M4 G(E) Terminal
—
15
in-lb
Weight
—
480
Grams
VISO
2500
Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 40mA, VCE = 10V
6.0
7.0
8.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 400A, VGE = 15V, Tj = 25°C
—
2.1
3.0
Volts
IC = 400A, VGE = 15V, Tj = 125°C
—
2.4
—
Volts
Total Gate Charge
QG
VCC = 600V, IC = 400A, VGE = 15V
—
2000
—
nC
Emitter-Collector Voltage**
VEC
IE = 400A, VGE = 0V
—
—
3.8
Volts
Min.
Typ.
Max.
Units
—
—
70
nf
—
—
6
nf
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Test Conditions VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Cres
—
—
Inductive
td(on)
—
—
550
ns
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Time
Fall Time
nf
tr
VCC = 600V, IC = 400A,
—
—
180
ns
td(off)
VGE1 = VGE2 = 15V, RG = 0.78Ω,
—
—
600
ns
tf
Inductive Load
—
—
350
ns
Diode Reverse Recovery Time***
trr
Switching Operation,
—
—
250
ns
Diode Reverse Recovery Charge***
Qrr
IE = 400A
—
14.7
—
µC
*TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
1.4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HA-24A Single IGBTMOD™ A-Series Module 400 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case*
Rth(j-c)Q
Per IGBT
—
—
0.053
°C/W
Thermal Resistance, Junction to Case*
Rth(j-c)D
Per FWDi
—
—
0.085
°C/W
—
0.02
—
°C/W
Contact Thermal Resistance
Rth(c-f)
External Gate Resistance
Thermal Grease Applied
RG
0.78
—
10
Ω
*TC, Tf measured point is just under the chips.
15
600
12
400 11
200 10
9
0
2
4
6
8
1
200
0
400
6
IC = 400A IC = 160A
4 2 0
800
IC = 800A
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
102
102
Tj = 25°C Tj = 125°C
0
600
8
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
2
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103
101
3
0
10
VGE = 15V Tj = 25°C Tj = 125°C
1
2
3
4
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
103
Cies
td(off)
101 Coes
100
Cres
102 tr
VCC = 600V VGE = 15V RG = 0.78Ω Tj = 125°C Inductive Load
VGE = 0V
5
20
tf td(on) SWITCHING TIME, (ns)
0
10
4
Tj = 25oC
13
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
800
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
10-1 10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
101 101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HA-24A Single IGBTMOD™ A-Series Module 400 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
20
Irr trr
102
VCC = 400V VCC = 600V
12 8 4
600
0
1200
1800
2400
GATE CHARGE, QG, (nC)
SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi)
VCC = 600V VGE = 15V IC = 400A Tj = 125°C Inductive Load
102
Eoff
0
2
100
10-1
Eon
10-2
Err
4
Eon
EMITTER CURRENT, IE, (AMPERES)
103
101
16
0
103
102
IC = 400A
4
6
GATE RESISTANCE, RG, (Ω)
8
10
SWITCHING LOSS, (mJ/PULSE)
102
101 101
SWITCHING LOSS, (mJ/PULSE)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
VCC = 600V VGE = 15V RG = 0.78Ω Tj = 25°C Inductive Load
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY, Irr, trr, (ns)
103
SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL)
GATE CHARGE VS. VGE
10-3
10-3
10-2
10-1
100
3000
101
10-1
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.053°C/W (IGBT) Rth(j-c) = 0.085°C/W (FWDi)
10-2
10-5 TIME, (s)
10-4
10-3 10-3
Eoff
Err
101 VCC = 600V VGE = 15V RG = 0.78Ω Tj = 125°C Inductive Load
100 101
102
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES)
103
