Cm800e2z-66h

Transcript

MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM800E2Z-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2Z-66H ● IC ................................................................... 800A ● VCES ....................................................... 3300V ● Insulated Type ● 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM 190 171 57 ±0.25 57 ±0.25 Dimensions in mm 6 - M8 NUTS 57 ±0.25 C C K (C) E E A (E) C 20 G E C CM E C E E 124 ±0.25 140 C 40 C E CIRCUIT DIAGRAM G 20.25 8 - φ7MOUNTING HOLES 41.25 79.4 15 61.5 61.5 40 13 28 5 38 5.2 LABEL 29.5 3 - M4 NUTS HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2001 MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som PRE CM800E2Z-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Mass Conditions VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Ratings 3300 ±20 800 1600 800 1600 10400 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Unit V V A A A A W °C °C V N·m N·m N·m kg ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V Min — Limits Typ — Max 10 IC = 80mA, VCE = 10V 4.5 6.0 7.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 800A, VGE = 15V Tj = 125°C — — — — — — — — — — — — — — — — — — — — — — — 3.80 4.00 120 12.0 3.6 5.7 — — — — 2.80 — 270 — — 0.008 3.00 — 270 — 0.008 0.5 4.94 — — — — — 1.60 2.00 2.50 1.00 3.64 1.40 — 0.012 0.024 — 3.90 1.40 — 0.024 — µA Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions (Note 4) VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5Ω Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = –1600A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Per 2/3 module) IF = 800A, Clamp diode part IF = 800A dif / dt = –1600A / µs, Clamp diode part Junction to case, Clamp diode part Case to fin, conductive grease applied (Per 1/3 module) Unit mA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W V µs µC K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2001 MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som PRE CM800E2Z-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1600 COLLECTOR CURRENT IC (A) VGE=13V VGE=12V VGE=14V 1200 VGE=11V VGE=10V VGE=15V VGE=20V 800 VGE=9V 400 VGE=8V COLLECTOR CURRENT IC (A) 1600 Tj=25°C VCE=10V 1200 800 400 Tj = 25°C Tj = 125°C VGE=7V 0 0 2 4 6 8 0 10 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 8 VGE=15V 6 4 2 Tj = 25°C Tj = 125°C 0 104 7 5 3 2 400 800 1200 8 IC = 1600A 6 IC = 800A 4 2 IC = 320A 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) Tj=25°C 102 7 5 3 2 0 Tj = 25°C COLLECTOR CURRENT IC (A) 103 7 5 3 2 101 10 0 1600 CAPACITANCE Cies, Coes, Cres (nF) 0 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE VEC (V) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VGE = 0V, Tj = 25°C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies Coes Cres 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2001 MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som PRE CM800E2Z-66H HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) td(off) 100 7 5 td(on) tr 3 2 10–1 7 5 REVERSE RECOVERY TIME trr (µs) 3 2 tf VCC = 1650V, VGE = ±15V RG = 2.5Ω, Tj = 125°C Inductive load 5 7 102 2 3 5 7 103 2 3 5 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 2.5Ω 2 Irr 101 7 5 103 7 5 3 2 100 7 5 3 2 trr 5 7 102 2 3 5 7 103 2 3 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.012K/ W 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (µs) 5 HIGH POWER SWITCHING USE INSULATED TYPE 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) 5 102 7 5 REVERSE RECOVERY CURRENT Irr (A) 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.024K/ W 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) VGE – GATE CHARGE (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 VCC = 1650V IC = 800A 16 12 8 4 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) Mar. 2001