Transcript
MITSUBISHI HVIGBT MODULES
Y
AR LIMIN
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
CM800HB-50H
PRE
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800HB-50H
● IC ................................................................... 800A ● VCES ....................................................... 2500V ● Insulated Type ● 1-element in a pack
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 114 57±0.25
4 - M8 NUTS
E
CM C
3 - M4 NUTS
E
C
E
E
G E
140
124 ±0.25
C
40
C
C C
20
57±0.25
E
G
CIRCUIT DIAGRAM
10.35 10.65
6 - φ7MOUNTING HOLES
48.8 15
61.5
40
28
38
5
LABEL
29.5
5.2
18
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001
MITSUBISHI HVIGBT MODULES
Y
AR LIMIN
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
PRE
CM800HB-50H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso
Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage
—
Mounting torque
—
Mass
Conditions VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part
Ratings 2500 ±20 800 1600 800 1600 10400 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5
(Note 1) (Note 1)
— — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value
Unit V V A A A A W °C °C V N·m N·m N·m kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol
Collector cutoff current Gate-emitter VGE(th) threshold voltage IGES Gate-leakage current Collector-emitter VCE(sat) saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance
ICES
Note 1. 2. 3. 4.
VCE = V CES, V GE = 0V
Min —
Limits Typ —
Max 10
IC = 80mA, VCE = 10V
4.5
6.0
7.5
V
VGE = VGES , VCE = 0V Tj = 25°C IC = 800A, VGE = 15V Tj = 125°C
— — — — — — — — — — — — — — — — —
— 2.80 3.15 120 13.2 4.0 5.4 — — — — 2.50 — 230 — — 0.008
0.5 3.64 — — — — — 1.60 2.00 2.50 1.00 3.25 1.20 — 0.012 0.024 —
µA
Item
Conditions
(Note 4)
VCE = 10V VGE = 0V VCC = 1250V, IC = 800A, VGE = 15V VCC = 1250V, I C = 800A VGE1 = VGE2 = 15V RG = 2.5Ω Resistive load switching operation IE = 800A, VGE = 0V IE = 800A, die / dt = –1600A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied
(Note 1)
Unit mA
V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W
Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, t rr , Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001
MITSUBISHI HVIGBT MODULES
Y
AR LIMIN
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
PRE
CM800HB-50H HIGH POWER SWITCHING USE INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
1600
1600 COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
VGE=14V 1200 VGE=15V
VGE=12V VGE=11V
VGE=10V
VGE=20V 800 VGE=9V 400 VGE=8V 0
VGE=7V 0
2
VCE=10V
VGE=13V
Tj=25°C
4
6
8
1200
800
400 Tj = 25°C Tj = 125°C 0
10
0
4
8
12
16
20
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
5
VGE=15V
4
3
2
1 Tj = 25°C Tj = 125°C 0
104 7 5 3 2
400
800
1200
1600
8 IC = 1600A
6
IC = 800A 4
2 IC = 320A 0
4
8
12
16
20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
Tj=25°C
102 7 5 3 2 0
Tj = 25°C
COLLECTOR CURRENT IC (A)
103 7 5 3 2
101
10
0
CAPACITANCE Cies, Coes, Cres (nF)
0
EMITTER CURRENT IE (A)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
103 7 5 3 2
VGE = 0V, Tj = 25°C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies
102 7 5 3 2 101 7 5 3 2
Coes Cres
100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2001
MITSUBISHI HVIGBT MODULES
Y
AR LIMIN
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
PRE
CM800HB-50H
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
td(off) 100
td(on)
7 5
tr tf
3 2 10–1 7 5
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)
REVERSE RECOVERY TIME trr (µs)
3 2
VCC = 1250V, VGE = ±15V RG = 2.5Ω, Tj = 125°C Inductive load 5 7 102
2 3
5 7 103
2 3
5
Irr
101 7 5
103 7 5
3 2 100 7 5
3 2 trr 5 7 102
2 3
5 7 103
2 3
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part)
101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.012K/ W 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)
SWITCHING TIMES (µs)
5
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1250V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 2.5Ω 2
100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s)
5
102 7 5
REVERSE RECOVERY CURRENT Irr (A)
HIGH POWER SWITCHING USE INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.024K/ W 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s)
VGE – GATE CHARGE (TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20 VCC = 1250V IC = 800A 16
12
8
4
0
0
2000
4000
6000
8000
10000
GATE CHARGE QG (nC) Mar. 2001
