Transcript
CQY37N Vishay Semiconductors
GaAs Infrared Emitting Diode in Miniature (T-¾) Package
Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters.
Features
94 8638
• Suitable for pulse operation • • • • • •
Standard T-¾ lensed miniature package Angle of half intensity ϕ = ± 12 ° Peak wavelength λp = 950 nm Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications Radiation source in near infrared range
Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol
Value
Reverse Voltage
Parameter
VR
5
V
Forward current
IF
100
mA
Surge Forward Current
Test condition
tp ≤ 100 µs
Unit
IFSM
2
A
Power Dissipation
PV
170
mW
Junction Temperature
Tj
100
°C
Tstg
- 25 to + 100
°C
Tsd
245
°C
RthJA
450
K/W
Storage Temperature Range Soldering Temperature
t≤3s
Thermal Resistance Junction/ Ambient
Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter
Test condition
Forward Voltage
IF = 50 mA, tp ≤ 20 ms
Breakdown Voltage
IR = 100 µA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Document Number 81002 Rev. 1.4, 08-Mar-05
Symbol
Min
VF V(BR) Cj
Typ.
Max
1.3
1.6
5
Unit V V
50
pF
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CQY37N
e3 Pb
Vishay Semiconductors
Pb-free
Optical Characteristics Tamb = 25 °C, unless otherwise specified Symbol
Min
Typ.
Max
Unit
Radiant Intensity
Parameter
IF = 50 mA, tp ≤ 20 ms
Test condition
Ie
2.2
5
11
mW/sr
Radiant Power
IF = 50 mA, tp ≤ 20 ms
φe
10
mW
Temp. Coefficient of φe
IF = 50 mA
TKφe
- 0.8
%/K
ϕ
± 12
deg
950
nm
Angle of Half Intensity Peak Wavelength
IF = 50 mA
λp
Spectral Bandwidth
IF = 50 mA
∆λ
50
nm
Rise time
IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs
tr
400
ns
Fall Time
IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs
tf
450
ns
∅
1.2
mm
Virtual Source Diameter
Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10 4 I F - Forward Current ( mA )
PV - Power Dissipation ( mW )
250 200
150 R thJA 100
50
10 3 10 2 10 1 10 0 10 -1
0 0
20
40
60
80
Tamb - Ambient Temperature ( °C )
94 8029
0
100
Figure 1. Power Dissipation vs. Ambient Temperature
V Frel - Relative Forward Voltage
I F - Forward Current ( mA )
3
4
1.2
100
75 R thJA 50
25 0
1.1 I F = 10 mA 1.0 0.9
0.8 0.7
0
20
40
60
80
Tamb - Ambient Temperature ( °C )
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0
100
Figure 2. Forward Current vs. Ambient Temperature
2
2
Figure 3. Forward Current vs. Forward Voltage
125
94 7916
1
V F - Forward Voltage ( V )
94 7996
94 7990
20
40
60
80
100
T amb - Ambient Temperature ( ° C )
Figure 4. Relative Forward Voltage vs. Ambient Temperature
Document Number 81002 Rev. 1.4, 08-Mar-05
CQY37N Vishay Semiconductors
1.25 Φe rel - Relative Radiant Power
I e – Radiant Intensity ( mW/sr )
100
10
1
1.0
0.75 0.5
0.25 I F = 100 mA
0.1 100
101 102 103 I F – Forward Current ( mA )
94 7920
0 900
104
λ - Wavelength ( nm )
94 7994
Figure 8. Relative Radiant Power vs. Wavelength
Figure 5. Radiant Intensity vs. Forward Current
I e rel – Relative Radiant Intensity
0°
Φ e - Radiant Power ( mW )
100
10
1
1000
950
10 °
20 °
30°
40° 1.0 0.9
50°
0.8
60° 70°
0.7
80° 0.1 1
10
100
0.6
1000
I F - Forward Current ( mA )
13718
0.4
0.2
0
0.2
0.4
0.6
94 7922
Figure 6. Radiant Power vs. Forward Current
Figure 9. Relative Radiant Intensity vs. Angular Displacement
1.6
I e rel ; Φe rel
1.2 I F = 20 mA 0.8
0.4
0 -10 0 10 94 7993
50
100
140
T amb - Ambient Temperature ( ° C )
Figure 7. Rel. Radiant Intensity/Power vs. Ambient Temperature
Document Number 81002 Rev. 1.4, 08-Mar-05
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CQY37N
e3 Pb
Vishay Semiconductors
Pb-free
Package Dimensions in mm 5.9 5.5
96 12262 technical drawings according to DIN specifications
3.45 3.10
4.1 0.47 0.40
5.4 5.0
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13.9 12.5
5.3 4.3
C
C
A
E
2.54
Document Number 81002 Rev. 1.4, 08-Mar-05
CQY37N Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81002 Rev. 1.4, 08-Mar-05
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Legal Disclaimer Notice Vishay
Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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