Transcript
CXM3555ER, LTE/CDMA/UMTS/GSM Multimode and CXM3558ER, Multiband Low Insertion Loss Antenna CXM3553ER Switch Modules for Mobile Phones
The emergence of LTE∗1, a standard of next-generation mobile communication system, means that we will soon be able to offer high-speed mobile services that rival optical fiber communications. With the initial introduction of LTE for data communication cards for laptops and tablet terminals, it is hoped that the new standard will be expanded to include mobile phones and smartphones. Sony has developed a low insertion loss antenna switch module that complies with multimode and multiband, and supports telecommunications systems such as CDMA, UMTS, GSM and also includes LTE. Using Sony’s unique JPHEMT process, we have started preparing a product lineup that will ensure low insertion loss, high isolation and low distortion, and offer the required number of bands. ∗1: LTE: Long Term Evolution
■ Low insertion loss, high isolation and low distortion ■ Built-in GaAs IPD-Dual low-pass filter (high attenuation) ■ Miniature low-profile package (VQFN lead frame type) VQFN-26P: 3.0 mm × 3.8 mm × 0.8 mm (CXM3555ER, CXM3558ER) VQFN-30P: 3.4 mm × 4.0 mm × 0.8 mm (CXM3553ER) ■ No DC cut capacitor required on the RF port ■ Employed as a reference design in major mobile platforms
and transmission/reception signal interference (isolation and distortion) in the high-frequency band (LTE (2.5 GHz band)). The use of lowdistortion devices developed based on a Sony’s unique JPHEMT∗2 process and optimization of a GaAs switching circuit configuration have yielded low insertion loss, high isolation and low distortion devices that overcome these issues. Low insertion loss leads to low current consumption during transmission and combined with high isolation and low distortion contributes to greater reception sensitivity. (See table 1.) ∗2: JPHEMT: Junction Gate Pseudomorphic High Electron Mobility Transistor
IPD-Dual LPF Multimode and Multiband Support The implementation of LTE terminals requires capability to select the telecommunications system that a location requires. This demands multimode capability that complies not only with LTE, but also existing telecommunications systems such as CDMA, UMTS and GSM. The 700 MHz band and 2.5 GHz band has recently been added to LTE but multiband capability that provides support for other telecommunications systems and multiple frequency bands will also be essential. We have developed three types of products that provide the required number of bands. (See figure 1.) CXM3555ER: SP10T (5TRx/2Tx/3Rx) CXM3558ER: SP10T (4TRx/2Tx/4Rx) CXM3553ER: SP12T (6TRx/2Tx/4Rx)
Low insertion Loss, High Isolation and Low Distortion Multimode and multiband capability involving LTE is affected by insertion loss degradation
The Dual LPF∗3 for the GSM cellular network employs IPD∗4 technology. The LPF comprises a high-Q inductor employing thick-film deposition laminar technology on a GaAs substrate, low-loss striplines and a capacitor. This achieves low loss in the signal pass band ensuring sufficient attenuation (25 dB or more) at frequency bands that are twice or three times the basic frequency. We obtained a high attenuation (20 dB or greater) even at 4 times and higher frequencies. (See figure 2.) ∗3: LPF: Low Pass Filter ∗4: IPD: Integrated Passive Device
Miniature Low-Profile Package (Lead Frame Module) This product lineup comes in one resin mold package based on a lead frame, our existing package technology, and consists of three chips: a JPHEMT switch, CMOS decoder and IPDDual LPF. (See figure 3 and figure 4.)
No DC Cut Capacitor Required on the RF Port Use of Sony’s unique circuit technology employing a CMOS decoder and JPHEMT switch has made it possible to eliminate the DC cut capacitor on the RF port. As a result, it has been possible to reduce the number of parts and shrink the mounting area on the end product circuit board.
Employed as a Reference Design in Major Mobile Platforms Te r m i n a l m a nu fa ct u re r s u se mobi le platforms that define the specifications of the telecommunications hardware, control software, semiconductor chipsets and other devices. There is an increasing trend to refer to the reference design (basic circuit design drawing) provided by the mobile platform in the design of terminals. This product lineup is employed as a reference design in major mobile platforms and has been designated a recommended component.
This product lineup is already employed as a reference design in major mobile platforms and has received numerous inquiries from potential customers. I strongly recommend that you consider this new product lineup. In future, we will work to make further improvements that fully utilize Sony’s unique technologies in addition to developing an attractive miniature low-profile antenna switch module that will support the increase in the number of bands and control system changes (SPI control, MIPI control). We aim to meet your expectations.
Figure 1
Block Diagram CXM3555ER
CXM3558ER
CXM3553ER
SP10T (5TRx / 2Tx / 3Rx)
SP10T (4TRx / 2Tx / 4Rx)
SP12T (6TRx / 2Tx / 4Rx)
ANT
ANT
Dual-LPF
ANT
Dual-LPF
Dual-LPF
Tx1
Tx1
Tx1
Tx2
Tx2
Tx2
Rx1
Rx1
Rx1
Rx2
Rx2
Rx2
Rx3
Rx3
Rx3
TRx1
Rx4
Rx4
TRx2
TRx1
TRx1
TRx3
TRx2
TRx2
TRx4
TRx3
TRx3
TRx5
TRx4
TRx4 TRx5
∗ TRx ：LTE / UMTS / CDMA / GSM Rx signal path Tx ：GSM Tx1 (Low Band) / GSM Tx2 (High Band) signal path Rx ：GSM Rx signal path
Figure 2
TRx6
Figure 3
GSM Low-band /High-band LPF Attenuation (CXM3555ER)
GSM Low-band Forward Transmission
External Dimensions CXM3555ER CXM3558ER
GSM High-band Forward Transmission
0
0
–10
–10
0.8 ± 0.5
3.8 dB (S (4, 3))
m2
m4
–30
–50
0
m6
m7 26
m5
4 6 8 10 Frequency [GHz]
12
14
8
1 pin mark 0
2
4 6 8 10 Frequency [GHz]
12
14
Channels Marker Frequency Attenuation Unit m5 3420 MHz 37.8 2fo m6 3820 MHz 28.2 ANT-Tx2 dB m7 5130 MHz 29.3 3fo m8 5730 MHz 28.7
CXM3553ER 0.8 ± 0.5
4.0 24
16
25
15
3.4
Frequency Attenuation Unit Channels Marker m1 1648 MHz 40.0 2fo m2 1830 MHz 27.6 ANT-Tx1 dB m3 2470 MHz 37.1 3fo m4 2740 MHz 30.1
–50
9 1
–40
2
13
m8
–30
m3
–40 m1
14
22
–20
3.0
dB (S (2, 1))
21
–20
30
10 1
9
1 pin mark
Figure 4
Internal Structures (3-in-1 Structure)
Table 1 Item
GaAs IPDDual LPF
Main Characteristics (CXM3555ER) Channels
Conditions
Typ.
Ant-Tx1
824 to 915 MHz
1.00
Ant-Tx2
1710 to 1910 MHz
1.00
452 to 960 MHz
0.48
1710 to 1990 MHz
0.59
2110 to 2170 MHz
0.62
2300 to 2690 MHz
0.88
869 to 960 MHz
0.82
GaAs switch
Insertion loss
CMOS decoder
AntTRx1, 2, 3, 4, 5
Ant-Rx1, 2, 3 Isolation CMOS decoder
GaAs switch
GaAs IPDDual LPF
IMD2
IMD3
[Unit: mm]
1805 to 1990 MHz
0.96
Tx1-Rx1, 2, 3
824 to 915 MHz
> 35
Tx2-Rx1, 2, 3
1805 to 1990 MHz
> 32
TRx1, 2, 3, 4, 5 -Ant TRx1, 2, 3, 4, 5 -Ant TRx1, 2, 3, 4, 5 -Ant TRx1, 2, 3, 4, 5 -Ant
TRx: 835 MHz +20 dBm Ant: 45 MHz –15 dBm
–120
TRx: 1950 MHz +20 dBm Ant: 190 MHz –15 dBm
–108
TRx: 835 MHz +20 dBm Ant: 790 MHz –15 dBm
–112
TRx: 1950 MHz +20 dBm Ant: 1760 MHz –15 dBm
–110
Unit
dB
dB
dBm
dBm
