Da1000 Led Chips Data Sheet

Transcript

Cree® Direct Attach™ DA1000™ LEDs CxxxDA1000-Sxxx00-2-G Data Sheet Cree’s DA™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the general-illumination market. The DA LEDs are among the brightest in the lighting market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-down configuration is designed for a flux eutectic die-attach process, eliminating the need for wire bonds, and enables superior performance from improved thermal management. FEATURES APPLICATIONS • Direct Attach LED Technology • • Rectangular LED RF Performance − Aircraft – 445-475 nm – 485+ mW − Decorative Lighting – 527 nm – 200+ mW − Task Lighting General Illumination • High Reliability - Eutectic Attach − Outdoor Illumination • Low Forward Voltage (Vf) – 3.15 V Typical at 350 mA • White LEDs • Maximum DC Forward Current – 1000 mA • Camera Flash • Junction-Down for Improved Thermal Management • Projection Displays • No Wire Bonds Required • Automotive CxxxDA1000-Sxxx00-2-G Chip Diagram Anode (+), 915 x 75 µm C CPR3ES Rev Data Sheet: 1000 x 1000 µm Gap 70 µm Cathode (-), 890 x 795 µm Thickness, 335 µm Top View Side View Subject to change without notice. www.cree.com Bottom View 1 Maximum Ratings at TA = 25°C Notes 1,2 & 3 CxxxDA1000-Sxxx00-2-G DC Forward Current 1000 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1500 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions ≤30°C / ≤85% RH Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Part Number Note 2 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450DA1000-Sxxx00-2-G 2.9 3.15 3.4 2 20 C460DA1000-Sxxx00-2-G 2.9 3.15 3.4 2 21 C470DA1000-Sxxx00-2-G 2.9 3.15 3.4 2 22 C527DA1000-Sxxx00-2-G 3.0 3.3 3.6 2 35 Mechanical Specifications CxxxDA1000-Sxxx00-2-G Description Dimension Tolerance P-N Junction Area (μm) 960 x 960 ±35 Chip Bottom Area (μm) 1000 x 1000 ±35 Chip Top Area (μm) 630 x 630 ±45 Chip Thickness (μm) 335 ±25 Bond Pad Width – Anode (um) 75 ±15 Bond Pad Length – Anode (um) 915 ±35 Bond Pad Width – Cathode (um) 795 ±35 Bond Pad Length – Cathode (um) 890 ±35 Bond Pad Gap (μm) Bond Pad Thickness (μm) 70 ±15 3 ±0.5 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone encapsulation and flux eutectic die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1¾ packages (with Hysol OS4000 epoxy encapsulant and flux eutectic die attach). Optical characteristics measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 1000 Maximum Forward Current (mA) 3. 1200 800 600 Rth j-a = 10 Rth j-a = 15 Rth j-a = 20 Rth j-a = 25 400 200 C/W C/W C/W C/W 0 25 50 75 100 125 150 Ambient Temperature (C) © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. ® 2 CPR3ES Rev C Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips 175 Standard Bins for CxxxDA1000-Sxxx00-2-G LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA1000-Sxxxxx-2-G) orders may be filled with any or all bins (CxxxDA1000-xxxx-2-G) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant Flux (mW) C450DA1000-S48500-2-G C450DA1000-0325-2-G C450DA1000-0326-2-G C450DA1000-0327-2-G C450DA1000-0328-2-G C450DA1000-0321-2-G C450DA1000-0322-2-G C450DA1000-0323-2-G C450DA1000-0324-2-G C450DA1000-0317-2-G C450DA1000-0318-2-G C450DA1000-0319-2-G C450DA1000-0320-2-G C450DA1000-0313-2-G C450DA1000-0314-2-G C450DA1000-0315-2-G C450DA1000-0316-2-G C450DA1000-0309-2-G C450DA1000-0310-2-G C450DA1000-0311-2-G C450DA1000-0312-2-G 625 585 550 515 485 445 447.5 450 452.5 455 Dominant Wavelength (nm) Radiant Flux (mW) C460DA1000-S48500-2-G C460DA1000-0325-2-G C460DA1000-0326-2-G C460DA1000-0327-2-G C460DA1000-0328-2-G C460DA1000-0321-2-G C460DA1000-0322-2-G C460DA1000-0323-2-G C460DA1000-0324-2-G C460DA1000-0317-2-G C460DA1000-0318-2-G C460DA1000-0319-2-G C460DA1000-0320-2-G C460DA1000-0313-2-G C460DA1000-0314-2-G C460DA1000-0315-2-G C460DA1000-0316-2-G C460DA1000-0309-2-G C460DA1000-0310-2-G C460DA1000-0311-2-G C460DA1000-0312-2-G 625 585 550 515 485 455 457.5 460 462.5 465 Dominant Wavelength (nm) Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp. © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. ® 3 CPR3ES Rev C Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxDA1000-Sxxxx00-2-G LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA1000-Sxxxxx-2-G) orders may be filled with any or all bins (CxxxDA1000-xxxx-2-G) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant Flux (mW) C470DA1000-S48500-2-G C470DA1000-0321-2-G C470DA1000-0322-2-G C470DA1000-0323-2-G C470DA1000-0324-2-G C470DA1000-0317-2-G C470DA1000-0318-2-G C470DA1000-0319-2-G C470DA1000-0320-2-G C470DA1000-0313-2-G C470DA1000-0314-2-G C470DA1000-0315-2-G C470DA1000-0316-2-G C470DA1000-0309-2-G C470DA1000-0310-2-G C470DA1000-0311-2-G C470DA1000-0312-2-G 585 550 515 485 465 467.5 470 475 472.5 Dominant Wavelength (nm) Radiant Flux (mW) C527DA1000-S20000-2-G C527DA1000-0216-2-G C527DA1000-0217-2-G C527DA1000-0218-2-G C527DA1000-0213-2-G C527DA1000-0214-2-G C527DA1000-0215-2-G C527DA1000-0210-2-G C527DA1000-0211-2-G C527DA1000-0212-2-G C527DA1000-0207-2-G C527DA1000-0208-2-G C527DA1000-0209-2-G 275 250 225 200 520 525 530 535 Dominant Wavelength (nm) Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp. © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. ® 4 CPR3ES Rev C Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Characteristic Curves These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Intensity vs. Forward Current Relative Light Intensity Vs Junction Temperature 250% 200% 150% 100% 50% 0% 100% Relative Light Intensity Relative Light Intensity 300% 0 250 500 750 1000 1250 95% 90% 85% 80% 75% 70% 65% 1500 25 50 75 100 125 Junction Temperature (°C) If (mA) 12 9 6 3 0 -3 -6 -9 -12 Dominant Wavelength Shift Vs Junction Temperature 6 5 DW Shift (nm) DW Shift (nm) Wavelength Shift vs. Forward Current 0 250 500 750 1000 1250 4 3 2 1 0 1500 25 50 75 If (mA) 150 0.000 Voltage Shift (V) 1250 1000 If (mA) 125 Voltage Shift Vs Junction Temperature 1500 750 500 -0.050 -0.100 -0.150 -0.200 -0.250 -0.300 250 -0.350 2 2.5 3 3.5 4 4.5 5 -0.400 25 50 Vf (V) © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. CPR3ES Rev C 75 100 125 150 Junction Temperature (°C) ® 5 100 Junction Temperature (°C) Forward Current vs. Forward Voltage 0 150 Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip. © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. ® 6 CPR3ES Rev C Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips