Datasheet For 1n5397g By Taiwan Semiconductor

Transcript

1N5391G - 1N5399G Pb 1.5AMPS Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Case: Molded plastic Dimensions in inches and (millimeters) Marking Diagram Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 fuaranteed 1N539X = Specific Device Code Polarity: Color band denotes cathode G = Green Compound High temperature soldering guaranteed: 260 /10s /.375", (9.5mm) lead lengths at 5 lbs, (2.3kg) tension Y = Year WW = Work Week Weight: 0.4 gram Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol 1N 1N 1N 1N 1N 1N 1N 5391G 5392G 5393G 5395G 5397G 5398G 5399G 50 100 200 400 600 800 1000 Unit Maximum Repetitive Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current .375"(9.5mm) Lead Length @TA=60 IF(AV) 1.5 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) IFSM 50 A Maximum Instantaneous Forward Voltage @ 1.5A VF Maximum Reverse Current @ Rated VR TA=25 T A=125 IR Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range Cj R jA 1.1 V V 1.0 5 uA 100 15 pF O 65 C/W TJ - 65 to + 150 O C TSTG - 65 to + 150 O C Note1: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Note2: Mount on Cu-Pad Size 16mm × 16mm on P.C.B. Version:C10 RATINGS AND CHARACTERISTIC CURVES (1N5391G - 1N5399G) FIG.1 MAXMUM FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL REVERSE CHARACTERISTICS 100 1.5 1 0.5 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE(oC) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD CURRENT(A) 2 TA=125 10 TA=75 1 TA=25 0.1 0.01 0 20 PEAK FORWARD SURGE CURRENT(A) 80 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 8.3ms Single Half Wave JEDEC Method 60 40 20 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 Fig. 5 TYPICAL FORWARD CHARACTERISTICS 10 INSTANTANEOUS FORWARD CURRENT (A) FIG. 4 TYPICAL JUNCTION CAPACITANCE 1000 CAPACITANCE (pF) 100 10 TA=25 f=1.0MHz Vslg=50mVp-p 1 0.1 1 10 REVERSE VOLTAGE (V) 100 1N5393G1N5399G 1 1N5391G1N5392G 0.1 0.01 0.4 0.6 0.8 1 1.2 FORWARD VOLTAGE (V) 1.4 Version:C10 1.6