Transcript
AO4202 30V N-Channel MOSFET
General Description
Product Summary
The AO4202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.
VDS ID (at VGS=10V)
30V 19A
RDS(ON) (at VGS=10V)
< 5.3mΩ
RDS(ON) (at VGS = 4.5V)
< 7mΩ
100% UIS Tested 100% Rg Tested
SOIC-8 2 Top View D D
Bottom View
D D 1
G S
3
S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
VGS TA=25°C
Units V
±20
V
19
ID
TA=70°C
Maximum 30
15
A
Pulsed Drain Current C
IDM
130
Avalanche Current C
IAS, IAR
38
A
Avalanche energy L=0.1mH C TA=25°C
EAS, EAR
72
mJ
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 2 : Nov 2010
3.1
PD
TA=70°C
TJ, TSTG
Symbol t 1 10s Steady-State Steady-State
W
2
RθJA RθJL
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-55 to 150
Typ 31 59 16
°C
Max 40 75 24
Units °C/W °C/W °C/W
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AO4202
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
Min
Conditions ID=250µA, VGS=0V
Typ
Max
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
130
TJ=55°C
µA
5 100
VGS=10V, ID=19A
1.8 4.4
Static Drain-Source On-Resistance VGS=4.5V, ID=15A
5.5
gFS
Forward Transconductance
VDS=5V, ID=19A
65
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance
2.3
nA V A
RDS(ON)
TJ=125°C
Units
5.3
6.5
mΩ
7
mΩ
1
V
4
A
2200
pF
S
1450
1840
500
720
940
pF
38
63
110
pF
0.3
0.7
1.1
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
23
29
35
nC
Qg(4.5V) Total Gate Charge
10
13
16
nC
3
4.2
5
nC
4.2
6
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=19A
2.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
6.5
ns
7
ns
21
ns
3.5
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=19A, dI/dt=500A/µs
12
15
18
Qrr
Body Diode Reverse Recovery Charge IF=19A, dI/dt=500A/µs
25
32
38
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=150°C, using C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2 : Nov 2010
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AO4202
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100 5V 6V 10V
80
VDS=5V
3.5V 80
60 ID(A)
ID (A)
60
40
40
3V
125°C
20
20
25°C
VGS=2.5V 0
0 0
1
2
3
4
1
5
8
2.5
3
3.5
4
Normalized On-Resistance
1.8
VGS=4.5V
6 RDS(ON) (mΩ )
2
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
4 VGS=10V 2
VGS=10V ID=19A
1.6 1.4 1.2
VGS=4.5V ID=15A
1
17 5 2 10
0.8
0 0
5
0
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
10
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02
20 ID=19A
1.0E+01
40
15
1.0E+00
10
IS (A)
RDS(ON) (mΩ )
1.5
125°C
125°C
1.0E-01 1.0E-02
25°C
1.0E-03
5
1.0E-04 25°C 1.0E-05
0 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 2 : Nov 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4202
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000
10 VDS=15V ID=19A
2500 Ciss Capacitance (pF)
VGS (Volts)
8
6
4
2
2000 1500 Coss 1000 500
0
Crss
0 0
5
10
15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics
0
30
100
5
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
IAR (A) Peak Avalanche Current
1000.0 100.0
TA=100°C TA=150°C
ID (Amps)
TA=25°C
10.0
10µs 100µs
RDS(ON) limited
1ms
1.0
10ms
TA=125°C
TJ(Max)=150°C TA=25°C
0.1
10s DC
0.0
10
0.01
1
10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C)
0.1
1 VDS (Volts)
10
100
Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
10000 TA=25°C
Power (W)
1000
100
10
1 0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 2 : Nov 2010
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AO4202
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1 PD
0.01
Single Pulse Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2 : Nov 2010
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AO4202
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 2 : Nov 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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