Transcript
AO4310 36V N-Channel MOSFET
General Description
Product Summary
The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
VDS ID (at VGS=10V)
36V 27A
RDS(ON) (at VGS=10V)
< 3.1mΩ
RDS(ON) (at VGS = 4.5V)
< 4.2mΩ
100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D Bottom View
D D G G S
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current
C
Units V
±20
V
27
ID
TA=70°C
Maximum 36
22
A
390
IDM
Avalanche Current C
IAS, IAR
67
A
Avalanche energy L=0.1mH C TA=25°C
EAS, EAR
224
mJ
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 0: February 2011
3.6
PD
TA=70°C
Steady-State Steady-State
-55 to 150
TJ, TSTG
Symbol t 1 10s
W
2.3
RθJA RθJL
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Typ 27 52 10
°C
Max 35 65 15
Units °C/W °C/W °C/W
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AO4310
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
1 TJ=55°C
µA
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
390
Units V
36
VDS=36V, VGS=0V
IGSS
100
nA
1.8
2.3
V
2.6
3.1
3.7
4.5
VGS=4.5V, ID=20A
3.3
4.2
VGS=10V, ID=20A RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
151
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance
mΩ mΩ S
1
V
5
A
2595
3248
3900
pF
VGS=0V, VDS=18V, f=1MHz
790
1130
1470
pF
16
54
95
pF
VGS=0V, VDS=0V, f=1MHz
0.8
1.8
2.7
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
37
46.4
57
nC
Qg(4.5V) Total Gate Charge
16
20.6
27
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=18V, ID=20A
VGS=10V, VDS=18V, RL=0.9Ω, RGEN=3Ω
nC
8
nC
6.2
nC
8.5
ns
4.8
ns
40.8
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
17
21.7
26
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
48
60.5
73
9.8
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
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AO4310
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100 10V
VDS=5V
80
80 4.5V 60 3V
ID(A)
ID (A)
60
40
40
20
125°C 25°C
20
VGS=2.5V
0
0 0
1
2
3
4
0
5
6 Normalized On-Resistance
RDS(ON) (mΩ Ω)
2
3
4
5
6
1.8
5 VGS=4.5V
4 3 2
VGS=10V
1 0
VGS=10V ID=20A
1.6 1.4 1.2
VGS=4.5V ID=20A
1
17 5 2 10
0.8 0
5
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
25
50
75
100
125
150
175
200
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
1.0E+02
12 ID=20A
1.0E+01
40
9
1.0E+00 125°C
IS (A)
RDS(ON) (mΩ Ω)
1
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
6
125°C
1.0E-01 1.0E-02
25°C 1.0E-03
3
1.0E-04
25°C
1.0E-05
0 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: February 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4310
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
5000 4500 VDS=18V ID=20A
4000 Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
3500 3000 2500 2000
Coss
1500 1000 Crss
500 0
0 0
5
10
15
20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics
45
50
0
IAR (A) Peak Avalanche Current
1000.0
6 12 18 24 30 VDS (Volts) Figure 8: Capacitance Characteristics
36
1000.0
10µs
TA=25°C
TA=100°C
ID (Amps)
100.0
100.0
TA=150°C
RDS(ON) limited
100µs
10.0
1ms
1.0
10ms
TA=125°C
10.0
TJ(Max)=150°C TA=25°C
0.1
100ms DC
10s
0.0
1.0 1
0.01
10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C)
0.1
1 10 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
100
10000 TA=25°C
Power (W)
1000
100
10
1 0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 0: February 2011
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AO4310
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
0.1 PD
0.01 Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2011
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AO4310
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 0: February 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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