Transcript
AO4718 30V N-Channel MOSFET
1234566576 General Description
Features
TM
SRFET The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
VDS (V) = 30V ID =15A (VGS = 10V) RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D
Bottom View
D
TM
SRFET Soft Recovery MOSFET: Integrated Schottky Diode
D
G
G
S S
S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage
Pulsed Drain Current
±20
IDSM
12
IDM
80
IAS, IAR
25
V
15
TA=70°C B
Avalanche Current B B
Avalanche energy L=0.3mH TA=25°C Power Dissipation
30
VGS TA=25°C
Continuous Drain AF Current
Units
Maximum
EAS, EAR
94
TJ, TSTG
Thermal Characteristics Parameter
Symbol t 1 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
W
2.0
Junction and Storage Temperature Range
Maximum Junction-to-Ambient A
mJ
3.1
PD
TA=70°C
A
RθJA RθJL
°C
-55 to 150
Typ 32 60 17
Max 40 75 24
Units °C/W °C/W °C/W
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AO4718
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, VGS=0V
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage On state drain current
VDS=VGS ID=250µA
1.3
VGS=10V, VDS=5V
80
TJ=125°C
VGS=10V, ID=15A Static Drain-Source On-Resistance
TJ=125°C VGS=4.5V, ID=12A
gFS
Forward Transconductance
VDS=5V, ID=15A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units V
0.1
Zero Gate Voltage Drain Current
RDS(ON)
Max
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
10 0.1
µA
1.65
2.5
V
7.3
9
10.3
13
10.8
14
mΩ
0.5
V
4
A
1950
pF
A
VGS=0V, VDS=0V, f=1MHz
mΩ
43 0.41
1620 VGS=0V, VDS=15V, f=1MHz
mA
S
382
pF
162
pF
1.2
Ω
1.8
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
24.7
32
nC
Qg(4.5V) Total Gate Charge
12
16
nC
VGS=10V, VDS=15V, ID=15A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=15A, dI/dt=300A/µs
VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω IF=15A, dI/dt=300A/µs
4.0
nC
5.6
nC
6.3
ns
9.3
ns
21.6
ns
5.4
ns
19
23
36.4
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev3: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80
30 10V
60
20 ID(A)
4V ID (A)
VDS=5V
25
4.5V
40
15
3.5V 10 20
125° 25°C
5
VGS=3V 0
0 0
1
2
3
4
1
5
2
VDS (Volts)
4
5
VGS(Volts) Figure 2: Transfer Characteristics
DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 15 Normalized On-Resistance
1.8 VGS=4.5V
13 RDS(ON) (mΩ )
3
11 9 VGS=10V 7 5
ID=15A VGS=10V
1.6 1.4 1.2
ID=12A VGS=4.5V
1 0.8
0
5
10
15
20
25
30
0
30
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
60
90
120
150
180
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
30 ID=15A
1.0E+01
125°C
25
20
IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C 15
25°C
1.0E-01 1.0E-02 1.0E-03
10
1.0E-04
25°C
1.0E-05
5 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics
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AO4718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500
10 VDS=15V ID=15A
Ciss
2000 Capacitance (pF)
VGS (Volts)
8 6 4
1500 1000 Coss
2
500
0
Crss
0 0
5
10
15
20
25
30
0
Qg (nC) Figure 7: Gate-Charge Characteristics
DYNAMIC PARAMETERS
1000.0
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
100
100.0
TJ(Max)=150°C TA=25°C
80 RDS(ON) limited
10.0
10µs 100µ 1m 10ms 0.1s
1.0 TJ(Max)=150°C TA=25°C
0.1 0.0 0.01
0.1
DC
1 VDS (Volts)
1s 10s
10
Power (W)
ID (Amps)
5
60 40 20 0 0.0001
100
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Zθ JA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1
0.01 Single Pulse 0.001 0.00001
0.0001
0.001
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W
0.01
0.1
PD Ton
1
T
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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AO4718
Gate Charge Test Circuit & W aveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & W aveform s RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclam ped Inductive Switching (UIS) Test Circuit & W aveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & W aveform s Q rr = - Idt
Vds + DUT Vgs
Vds Isd
L
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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