Transcript
AOD510/AOI510 30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (1MOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial
VDS ID (at VGS=10V)
30V 70A
RDS(ON) (at VGS=10V)
< 2.6mΩ
RDS(ON) (at VGS=4.5V)
< 4mΩ
100% UIS Tested 100% Rg Tested
TO252 DPAK TopView
Top View
Bottom View
TO-251A IPAK
D Bottom View
D
D
S
D
D
G
G
S
S
G
G
D S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TC=25°C
Continuous Drain Current G Pulsed Drain Current C
C
Units V
±20
V A
280 45
IDSM
TA=70°C
Maximum 30
54
IDM TA=25°C
Continuous Drain Current
S
D
70
ID
TC=100°C
G
A
37
IAS
45
A
Avalanche energy L=0.1mH C
EAS
101
mJ
VDS Spike
VSPIKE
36
V
Avalanche Current
Power Dissipation B
100ns TC=25°C
PD
TC=100°C TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Feb. 2012
7.5
Steady-State Steady-State
RθJA RθJC
W
5.2
TJ, TSTG
Symbol t 2 10s
W
30
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
60
-55 to 175
Typ 16 41 1.9
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°C
Max 20 50 2.5
Units °C/W °C/W °C/W
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AOD510/AOI510
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd tD(on)
1.7
±100
nA
2.2
V
2.1
2.6
2.7
3.3
3.2
4
mΩ
1
V
70
A
85 0.7
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.9
mΩ
S
2719 VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge
µA
5 1.2
Units V
1 TJ=55°C
VDS=5V, ID=20A
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
pF
1204
pF
169
pF
2
3
Ω
44
60
nC
21
28
nC
9
nC
Gate Drain Charge
7
nC
Turn-On DelayTime
9.7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
5.2
ns
32.5
ns
tf
Turn-Off Fall Time
10.3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
19.6
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
42.7
ns nC
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Feb. 2012
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AOD510/AOI510
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120
100 10V
4V
VDS=5V
3.5V
100
80
4.5V 80 ID(A)
ID (A)
60 60
40 40 20
VGS=3V
20
125°C
0
0 0
1
2
3
4
0
5
1
2
3
4
5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 Normalized On-Resistance
1.6
5 RDS(ON) (mΩ Ω)
25°C
4
VGS=4.5V
3 2 VGS=10V
1 0
VGS=10V ID=20A
1.4
17 5 VGS=4.5V 2 ID=20A 10
1.2
1
0.8 0
5
0
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
200
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
6
1.0E+02
ID=20A 5
1.0E+01
4
1.0E+00 125°C
IS (A)
RDS(ON) (mΩ Ω)
40
3
125°C
1.0E-01 1.0E-02
2 1.0E-03 1
25°C
25°C
1.0E-04
0
1.0E-05 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: Feb. 2012
4
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0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOD510/AOI510
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000
10 VDS=15V ID=20A
3500
8
Ciss
Capacitance (pF)
VGS (Volts)
3000 6
4
2500 2000 Coss
1500 1000
2 500 Crss 0
0 0
10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics
50
0
RDS(ON) limited
10µs
30
100µs
10.0 1.0
1ms 10ms
TJ(Max)=175°C TC=25°C
DC
0.1
TJ(Max)=175°C TC=25°C
160
10µs Power (W)
ID (Amps)
10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
200
1000.0 100.0
5
120 80 40
0.0
0 0.01
0.1
1 VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.5°C/W
1
PD
Single Pulse
0.1
Ton T
0.01 1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Feb. 2012
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AOD510/AOI510
80
100
60
80 Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
60
40
20 0
0 0
25
50
75
100 125 150 TCASE (° °C) Figure 12: Power De-rating (Note F)
175
0
25
50
75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F)
175
10000 TA=25°C
Power (W)
1000
100
10
1 1E-05
0.001
0.1
10
1000
Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1 Single Pulse
PD
0.01 Ton T
0.001 1E-05
Rev 0: Feb. 2012
0.0001
0.001
0.01
0.1 1 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
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100
1000
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AOD510/AOI510
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 0: Feb. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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