Transcript
AOD609 Complementary Enhancement Mode Field Effect Transistor General Description
Features
The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
n-channel VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mΩ (VGS=10V) RDS(ON)< 40mΩ (VGS=4.5V) p-channel VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mΩ (VGS= -10V) RDS(ON)< 66mΩ (VGS= -4.5V) 100% UIS Tested! 100% Rg Tested!
-RoHS Compliant -Halogen Free*
Top View
TO-252-4L D-PAK D1/D2
Bottom View
Top View Drain Connected to Tab
D1/ D2
G1 S2 S1
G1
S2
n-channel
p-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 V Gate-Source Voltage ±20 GS Continuous Drain Current B,H
TC=25°C TC=100°C
G2 S1
G2
Max p-channel -40 ±20
12
-12
12
-12
30
-30
V
Pulsed Drain Current B
ID IDM
Avalanche Current C
IAR
14
-20
Repetitive avalanche energy L=0.1mHC
EAR
9.8
20
27
30
14
15
2
2
1.3
1.3
-55 to 175
-55 to 175
Power Dissipation Power Dissipation
TC=25°C TC=100°C TA=25°C TA=70°C
Junction and Storage Temperature Range
PD PDSM TJ, TSTG
Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Symbol RθJA RθJC RθJA RθJC
Units V
A
mJ W W °C
Device n-ch n-ch n-ch
Typ 17.4 50 4
Max 25 60 5.5
Units °C/W °C/W °C/W
p-ch p-ch p-ch
16.7 50 3.5
25 60 5
°C/W °C/W °C/W
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AOD609
N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Min
Conditions ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
TJ=55°C
±100 3
24
30
37
46
VGS=4.5V, I D=8A
31
40
VDS=5V, ID=12A
25
VGS=10V, I D=12A TJ=125°C
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qgs Gate Source Charge
5 2.5
Static Drain-Source On-Resistance
nA V
mΩ S
0.76
516 VGS=0V, VDS=20V, f=1MHz
µA
A
1
V
2
A
650
pF
82
pF
43
pF Ω
VGS=0V, VDS=0V, f=1MHz
4.6
6.9
VGS=10V, VDS=20V, ID=12A
8.3
10.8
2.3
nC
1.6
nC
6.4
ns
3.6
ns
16.2
ns
6.6
ns
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=12A, dI/dt=100A/µs
18
Body Diode Reverse Recovery Charge
IF=12A, dI/dt=100A/µs
10
Qrr
Units V
VDS=40V, VGS=0V
Zero Gate Voltage Drain Current
IS
Max
40
IDSS
RDS(ON)
Typ
VGS=10V, VDS=20V, RL=1.4Ω, RGEN=3Ω
24
nC
ns nC
A: The value of R JA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using the steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation lim for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep ST 1 2008). Rev4: Aug 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30
30 10V
5V
VDS=5V
25
25 4.5V 20 4V ID(A)
ID (A)
20 15 10
15 125°C
10 VGS=3.5V
25°C
5
5
0
0 0
1
2
3
4
5
2
VDS (Volts) Fig 1: On-Region Characteristics
3
3.5
4
4.5
VGS(Volts) Figure 2: Transfer Characteristics
36
1.8
34
Normalized On-Resistance
VGS=4.5V
32 RDS(ON) (mΩ)
2.5
30 28 VGS=10V
26 24 22 20
1.6 VGS=10V ID=12A
1.4 1.2
VGS=4.5V ID=8A
1 0.8 0.6
0
5
10
15
20
-50
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
-25
0
25
50
75
100
125
150
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
90
100 ID=12A 10
70
125°C 50 25°C 30
IS (A)
RDS(ON) (mΩ)
1 0.1 125°C 25°C
0.01 0.001 0.0001 0.0
10 3
4
5
6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
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AOD609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 800
10 VDS=20V ID= 12A Capacitance (pF)
VGS (Volts)
8 6 4 2
Ciss
600
400
Crss
200
Coss
0
0 0
2
4
6
8
0
10
10
20
30
40
VDS (Volts) Figure 8: Capacitance Characteristics
Qg (nC) Figure 7: Gate-Charge Characteristics
1000
100
TJ(Max)=150°C TA=25°C
10µs 100µs 1
RDS(ON) limited
1ms 10ms 0.1s 1s 10s
0.1 TJ(Max)=150°C TA=25°C
DC
100 Power (W)
ID (Amps)
10
10
0.01 0.1
1
10
1 0.00001
100
VDS (Volts)
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
ZθJA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton Single Pulse 0.01 0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AOD609
G ate C harge Test C ircuit & W ave form Vgs Qg
10V
+
+ V ds
VDC
-
Qgd
Qgs
V DC
-
DU T Vgs
Ig C harge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Unclamped Inductive Switching (U IS) Test Circuit & W aveform s L
2
E AR = 1/2 LIAR
Vds
BVD SS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VD C
-
Rg
Id
DU T Vgs
Vgs
D iode R ecovery Test C ircuit & W aveform s Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Vgs
L
Isd
+ Vdd
Alpha & Omega Semiconductor, Ltd.
-
t rr
dI/dt I RM Vdd
VD C
Ig
IF
Vds
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AOD609
P-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID= -250µA, VGS=0V
-40
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID= -250µA
-1.7
ID(ON)
On state drain current
VGS= -10V, VDS= -5V
-30
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage IS= -1A,VGS=0V Maximum Body-Diode Continuous Current
TJ=55°C
VGS= -10V, I D= -12A
Output Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs
Gate Source Charge
Qgd tD(on)
-3
V A
45 65
VGS= -4.5V, I D= -8A
51
66
VDS= -5V, I D= -12A
22 -0.76
900
VGS=0V, VDS=0V, f=1MHz
VGS= -10V, VDS= -20V, ID= -12A
mΩ S
-1
V
-2
A
1125
pF
97
pF
68
pF
14
Ω
16.2
21
nC
7.2
9.4
nC nC
Gate Drain Charge
3.5
nC
Turn-On DelayTime
6.2
ns
tr
Turn-On Rise Time Turn-Off DelayTime
tf
Turn-Off Fall Time
Qrr
nA
3.8
tD(off) trr
-2
±100
36
VGS=0V, VDS= -20V, f=1MHz
µA
-5
52
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Crss
Units
-1
Zero Gate Voltage Drain Current
Coss
Max
V
VDS= -40V, VGS=0V
IDSS
IS
Typ
VGS= -10V, VDS= -20V, RL=1.4Ω, RGEN=3Ω
8.4
ns
44.8
ns
41.2 IF= -12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/µs
21
ns 27
ns nC
14
A: The value of R JA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep ST 1 2008). Rev4: Aug 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30
30 VDS=-5V
-10V 25
-4V
-4.5V
20 -ID(A)
20 -ID (A)
25
-5V
15 VGS=-3.5V
10
15 125°C
10
5
25°C
5
0
0 0
1
2
3
4
5
1.5
-VDS (Volts) Fig 12: On-Region Characteristics
2.5
3
3.5
4
4.5
-VGS(Volts) Figure 13: Transfer Characteristics 1.7
65 Normalized On-Resistance
60 VGS=-4.5V
55 RDS(ON) (mΩ)
2
50 45 VGS=-10V
40 35
VGS=-10V ID=-12A
1.5
1.3
1.1
VGS=-4.5V ID=-8A
0.9
0.7
30 0
-50
5
10 15 20 -ID (A) Figure 14: On-Resistance vs. Drain Current and Gate Voltage
-25
0
25
50
75
100
125
150
Temperature (°C) Figure 15: On-Resistance vs. Junction Temperature 100
130 ID=-12A
10
110
-IS (A)
RDS(ON) (mΩ)
1 90
125°C
70
25°C
0.01 0.001
25°C
50
125°C 0.1
0.0001 30
0.0 3
4
5
6
7
8
9
10
-VGS (Volts) Figure 16: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 17: Body-Diode Characteristics
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AOD609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10
1400 VDS=-20V ID= -12A
1200 Ciss Capacitance (pF)
-VGS (Volts)
8
6
4
1000 800 600 Crss
400
Coss
2 200 0
0 0
3
6
9 12 15 Qg (nC) Figure 18: Gate-Charge Characteristics
0
18
10
20 30 -VDS (Volts) Figure 19: Capacitance Characteristics
40
1000
100
TJ(Max)=150°C TA=25°C
10µs 100µs 1
RDS(ON) limited
1ms 10ms 0.1s 1s 10s
0.1 TJ(Max)=150°C TA=25°C
DC
Power (W)
-ID (Amps)
10
0.01 0.1
1
10
100
10
1 0.00001
100
0.001
0.1
10
1000
-VDS (Volts) Pulse Width (s) Figure 21: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 20: Maximum Forward Biased Safe Operating Area (Note E)
ZθJA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton 0.01 0.00001
Single Pulse 0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AOD609
Gate Charge Test Circuit & Waveform Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT Vgs
Ig Charge
Resistive Switching Test Circuit & Waveforms RL
Vds
t off
t on td(on)
Vgs
-
DUT
Vgs
t d(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd
Id
I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
-Isd
+ Vdd
t rr
dI/dt -I RM
Vdd
VDC
-
-I F
-Vds
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