Transcript
AOD8N25/AOI8N25 250V,8A N-Channel MOSFET
General Description
Product Summary
The AOD8N25 & AOI8N25 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS
300V@150
ID (at VGS=10V)
8A
RDS(ON) (at VGS=10V)
< 0.56Ω
100% UIS Tested! 100% Rg Tested!
19ABA CDEF 12345678
19ABE DEF 12345678
2245678
32 2245678
32222 32222
12222
42222
G
42222 12222 E9CAB
S
Gate-Source Voltage
VGS TC=25°C TC=100°C
D
4
E9AB
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Continuous Drain CurrentB
12
G
S D
Maximum 250
Units V
±30
V
8
ID
5
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAS
2.1
A
Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
EAS dv/dt
132 5 78
mJ V/ns W
0.63 -50 to 150
W/ oC °C
300
°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F
Rev 1: Feb 2012
16
PD TJ, TSTG TL
Symbol RθJA RθCS
Typical 45
Maximum 55
Units °C/W
1.3
0.5 1.6
°C/W °C/W
RθJC
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AOD8N25/AOI8N25
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
Min
ID=2502A, VGS=0V, TJ=25°C
250
Typ
Max
Units
STATIC PARAMETERS BVDSS
Drain-Source Breakdown Voltage
BVDSS /1TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=2502A, VGS=0V, TJ=150°C
300
V
ID=2502A, VGS=0V
0.25
V/ oC
VDS=250V, VGS=0V
1
VDS=200V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100 3.1
µA
3.7
4.3
nΑ V
0.56
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
0.46
gFS
Forward Transconductance
VDS=40V, ID=1.5A
5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
8
A
ISM
Maximum Body-Diode Pulsed Current
16
A
0.77
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
S 1
V
306
pF
51
pF
3.2 VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=200V, ID=1.5A
1.7
pF
3.4
5.1
Ω
6.0
7.2
nC
Qgs
Gate Source Charge
2.0
nC
Qgd
Gate Drain Charge
1.5
nC
tD(on)
Turn-On DelayTime
14
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=125V, ID=1.5A, RG=25Ω IF=1.5A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=1.5A,dI/dt=100A/µs,VDS=100V
12
ns
23
ns
12
ns
77
ns µC
0.29
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2.1A, VDD=150V, RG=10 , Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Feb 2012
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AOD8N25/AOI8N25
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
100 10V
VDS=40V
6.5V
8
-55°C 10 6
ID(A)
ID (A)
6V 125°C
4 5.5V
1 25°C
2 VGS=5V 0
0.1 0
5
10 15 20 VDS (Volts) Fig 1: On-Region Characteristics
25
2
6 8 VGS(Volts) Figure 2: Transfer Characteristics
10
3 Normalized On-Resistance
1.5
1.2 RDS(ON) (Ω Ω)
4
VGS=10V
0.9
0.6
0.3
2.5
VGS=10V ID=1.5A
2 1.5 1 0.5 0
0.0 0
2
4
6
8
-100
10
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
1.2
-50
0
50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
1E+01
1E+00
1.1
40
125°C
1E-01 1
IS (A)
BVDSS (Normalized)
ID=30A
125°
25°C
1E-02
0.9 1E-03
25°
0.8
1E-04 -100
50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature
Rev 1: Feb 2012
-50
0
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0.2
0.4
0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics
1.0
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AOD8N25/AOI8N25
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
1000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=200V ID=1.5A
12
9
6
100
Coss
10 Crss
3
0
1 0
2
4
6
8
10
0.1
1
10 VDS (Volts) Figure 8: Capacitance Characteristics
Qg (nC) Figure 7: Gate-Charge Characteristics 800
100
100µs
1
DC
TJ(Max)=150°C TC=25°C
600
10µs
RDS(ON) limited
Power (W)
10 ID (Amps)
100
1ms 10ms
0.1
400
200 TJ(Max)=150°C TC=25°C
0.01
0 1
10
100
1000
0.0001
0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.001
Zθ JC Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.6°C/W 1
0.1
PD Single Pulse
Ton T
0.01 1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Feb 2012
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AOD8N25/AOI8N25
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10.0
75
8.0 Current rating ID(A)
Power Dissipation (W)
90
60 45 30
6.0
4.0
2.0
15 0
0.0 0
25
50
75 100 125 TCASE (°C) Figure 12: Power De-rating (Note B)
150
0
25
50
75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B)
150
400 TJ(Max)=150°C TA=25°C
Power (W)
300
200
100
0 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
Zθ JA Normalized Transient Thermal Resistance
10
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W
0.1 PD 0.01 Ton
Single Pulse
T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 1: Feb 2012
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AOD8N25/AOI8N25
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ +
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs Ig Charge
Res istive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
+ VDC
90% Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT Vgs
Vds -
Isd Vgs
Ig
Rev 1: Feb 2012
Isd
L
+ Vdd
trr
dI/dt IRM
Vdd
VDC
-
IF
Vds
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