Transcript
AON1611 20V P-Channel MOSFET
General Description
Product Summary
The AON1611 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS
Top View
ID (at VGS=-4.5V)
-20V -4A
RDS(ON) (at VGS =-4.5V)
< 58mΩ
RDS(ON) (at VGS =-2.5V)
< 76mΩ
RDS(ON) (at VGS =-1.8V)
< 98mΩ
RDS(ON) (at VGS =-1.5V)
< 120mΩ
Typical ESD protection
HBM Class 2
DFN 1.6x1.6A Bottom View
D Pin 1
D
S S
G
G
S Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS
Gate-Source Voltage Continuous Drain Current G
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Rev 0 : June 2012
Steady-State
A
1.8
W
1.15
TJ, TSTG
Symbol t 1 10s
V
-16
PD
TA=70°C
±8 -3
IDM TA=25°C
Power Dissipation A
Units V
-4
ID
TA=70°C
Maximum -20
RθJA
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-55 to 150
Typ 56 88
°C
Max 70 110
Units °C/W °C/W
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AON1611
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20 -1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-16
TJ=55°C
µA V
46
58
64.5
80
VGS=-2.5V, ID=-3A
58
76
VGS=-1.8V, ID=-2A
74
98
mΩ
VGS=-1.5V, ID=-1A
88
120
mΩ
15
Forward Transconductance
VDS=-5V, ID=-4A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs
Gate Source Charge
µA
±10
gFS
Output Capacitance
-5 -0.9
TJ=125°C
Coss
Units
-0.6
VGS=-4.5V, ID=-4A Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
A
-0.66
mΩ
S -1
V
-2.5
A
550
pF
93
pF
64
pF
12
Ω
7 VGS=-4.5V, VDS=-10V, ID=-4A
mΩ
10
nC
1
nC
Qgd
Gate Drain Charge
1.8
nC
tD(on)
Turn-On DelayTime
15
ns
tr
Turn-On Rise Time
33
ns
tD(off)
Turn-Off DelayTime
50
ns
tf
Turn-Off Fall Time
43
ns ns nC
VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=-4A, dI/dt=100A/µs
16
Qrr
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
6.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : June 2012
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AON1611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20
20 -4.5V
-2.5V
VDS=-5V
15
15
-ID(A)
-ID (A)
-1.8V 10
10 125°C
-1.5V 5
5
25°C
VGS=-1.0V 0
0 0
1
2
3
4
0
5
1
1.5
2
2.5
3
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Fig 1: On-Region Characteristics (Note E) 120
1.6 Normalized On-Resistance
VGS=-1.5V
100
VGS=-1.8V RDS(ON) (mΩ Ω)
0.5
80 VGS=-2.5V
60 40
VGS=-4.5V
20
VGS=-4.5V ID=-4A 1.4 VGS=-2.5V ID=-3A VGS=-1.8V ID=-2A
1.2
VGS=-1.5V ID=-1A
1
0.8
0 0
0
2
4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
1.0E+01
140 ID=-4A 120 -IS (A)
1.0E+00
RDS(ON) (mΩ Ω)
100 125°C
80
125°C
1.0E-01 1.0E-02
25°C 60
1.0E-03
40
25°C
20
1.0E-04 1.0E-05
0
2 3 4 5 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0 : June 2012
1
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0.0
0.2
0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AON1611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5
1000 VDS=-10V ID=-4A 800 Capacitance (pF)
-VGS (Volts)
4
3
2
400
1
200
0
0 0
2
4 6 Qg (nC) Figure 7: Gate-Charge Characteristics
Coss
Crss
8
0
5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics
20
200
100.0 10µs 10µs 100µs
RDS(ON) limited 1.0
1ms
0.1
10ms 100ms 1s
TJ(Max)=150°C TA=25°C
TJ(Max)=150°C TA=25°C
160
DC
Power (W)
10.0 -ID (Amps)
Ciss
600
120 80 40
0.0
0 0.01
0.1
1 -VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
RθJA=110°C/W
0.1 PD 0.01
Single Pulse Ton
T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : June 2012
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AON1611
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 0 : June 2012
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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