Transcript
AON2410 30V N-Channel MOSFET
General Description
Product Summary
The AON2410 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=4.5V)
30V 8A
RDS(ON) (at VGS = 4.5V)
< 21mΩ
RDS(ON) (at VGS = 2.5V)
< 28mΩ
DFN 2x2B Top View S
D
Bottom View D D D S
Pin 1 D
Pin 1
G
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS VGS
Gate-Source Voltage Continuous Drain Current G
TA=25°C
Pulsed Drain Current C Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Rev 0 : Dec 2011
Steady-State
A A
32
W
1.8
TJ, TSTG
Symbol t 1 10s
V
2.8
PD
TA=70°C
±12 6
IDM TA=25°C
Units V
8
ID
TA=70°C
Maximum 30
RθJA
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-55 to 150
Typ 37 66
°C
Max 45 80
Units °C/W °C/W
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AON2410
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
32
TJ=55°C
VGS=4.5V, ID=8A TJ=125°C VGS=2.5V, ID=4A
±100
nA
1.07
1.5
V
17.1
21
26
32
21.2
28
mΩ
1
V
3.5
A
A
Forward Transconductance
VDS=5V, ID=8A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
gFS
DYNAMIC PARAMETERS Ciss Input Capacitance
Units V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
813
pF
VGS=0V, VDS=15V, f=1MHz
98
pF
VGS=0V, VDS=0V, f=1MHz
2.3
3.5
Ω
8
12
nC
VGS=4.5V, VDS=15V, ID=8A
1.2
nC
56
SWITCHING PARAMETERS Total Gate Charge Qg
pF
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
2.6
nC
tD(on)
Turn-On DelayTime
3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
3
ns
26
tf
Turn-Off Fall Time
ns
3.5
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=8A, dI/dt=100A/µs
10
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
2.4
ns nC
VGS=4.5V, VDS=15V, RL=1.8Ω, RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t 1 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2011
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AON2410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40
20 10V
3V VDS=5V 16
30
2.5V 4.5V ID(A)
ID (A)
12 20
8 125°C 10
4 25°C
VGS=1.5V 0
0 0
1
2
3
4
0
5
35
1
1.5
2
2.5
3
Normalized On-Resistance
1.8
30 RDS(ON) (mΩ Ω)
0.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
25 20 15
VGS=4.5V
VGS=4.5V ID=8A
1.6 1.4
17 5 2 VGS=2.5V 10 ID=4A
1.2 1 0.8
10 0
5
10
0
15
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
1.0E+02
40 ID=8A
1.0E+01
35
40
IS (A)
RDS(ON) (mΩ Ω)
1.0E+00
125°C
30 25 20
125°C
1.0E-01 1.0E-02
25°C
1.0E-03
15 25°C
1.0E-04 1.0E-05
10 0
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0 : Dec. 2011
2
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AON2410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200
5 VDS=15V ID=8A
1000 Ciss Capacitance (pF)
VGS (Volts)
4
3
2
800 600 400 Coss
1
200
0
0 0
2
4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics
10
0
5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
10000
100.0 10µs
RDS(ON) limited
100µs
1ms
1.0
10ms 0.1
TA=25°C
1000
TJ(Max)=150°C TA=25°C
Power (W)
10.0 ID (Amps)
Crss
17 5 2 10
100
DC
10
0.0 0.01
0.1
1 VDS (Volts)
10
1
100
0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
1E-05
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
0.001
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=80°C/W
0.1
0.01
Single Pulse
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Dec. 2011
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AON2410
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 0 : Dec. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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