Transcript
AON6454A 150V N-Channel MOSFET
General Description
Product Summary
The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS
150V 31A
ID (at VGS=10V) RDS(ON) (at VGS=10V)
< 38mΩ
RDS(ON) (at VGS=7V)
< 44mΩ
100% UIS Tested 100% Rg Tested
123456 Top View
D
Top View Bottom View 1
8
2
7
3
6
4
5
G S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage
VGS TC=25°C
Continuous Drain Current Pulsed Drain Current Continuous Drain Current
C
V A
65 5
IDSM
TA=70°C
±20 20
IDM TA=25°C
Units V
31
ID
TC=100°C
Maximum 150
A
4.0
Avalanche Current C
IAS, IAR
12
A
Avalanche energy L=0.1mH C TC=25°C
EAS, EAR
7
mJ
Power Dissipation B
TA=25°C Power Dissipation A
Junction and Storage Temperature Range
Rev 0: April 2011
2.3
Steady-State Steady-State
RθJA RθJC
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W
1.5
TJ, TSTG
Symbol t 1 10s
W
33
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
83
PD
TC=100°C
-55 to 150
Typ 14 40 1
°C
Max 17 55 1.5
Units °C/W °C/W °C/W
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AON6454A
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
150
Max
1 TJ=55°C
µA
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
3.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
65
Units V
VDS=150V, VGS=0V
IGSS
±100
nA
4
4.6
V
31
38
59
72
VGS=7V, ID=20A
35
44
35
VGS=10V, ID=20A RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS Ciss Input Capacitance
A
0.69
mΩ mΩ S
1
V
85
A
1365
1710
2055
pF
VGS=0V, VDS=75V, f=1MHz
100
150
200
pF
30
50
70
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
25
32.5
40
nC
Qg(4.5V) Total Gate Charge
5
7.8
10
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=75V, ID=20A
VGS=10V, VDS=75V, RL=3.75Ω, RGEN=3Ω
9.5
nC
13.5
nC
12
ns
8
ns
20
ns
tf
Turn-Off Fall Time
4.5
ns
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
33
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
350
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: April 2011
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AON6454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70
50
10V
VDS=5V
60
7V
40
8V 30
40
ID(A)
ID (A)
50
6.5V 30
20 125°C
6V
20
10 10
25°C
5.5V
VGS=5V
0
0 0
1
2
3
4
2
5
3
45
5
6
7
8
2.4 Normalized On-Resistance
VGS=7V 40 RDS(ON) (mΩ )
4
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
35 30 VGS=10V 25 20
2.2 VGS=10V ID=20A
2 1.8 1.6 1.4
VGS=7V ID=20A
1.2 1
17 5 2 10
0.8 0
5
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02
70 ID=20A
1.0E+01 60
40
1.0E+00
50
IS (A)
RDS(ON) (mΩ )
125°C
125°C
1.0E-01 1.0E-02
40
25°C
1.0E-03 30
25°C
1.0E-04 1.0E-05
20 4
5
6
7
8
9
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: April 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AON6454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800
10 VDS=75V ID=20A
2400 Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2000 1600 1200
2
Coss
800
Crss
400 0
0 0
5
10
15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics
0
35
25
50
75 100 125 VDS (Volts) Figure 8: Capacitance Characteristics
400
1000.0
TJ(Max)=150°C TC=25°C
350 10µs
100.0
300 10µs
RDS(ON) limited
10.0
Power (W)
ID (Amps)
150
100µs 1ms 10ms
DC
1.0
0.1
150
50
0.0 0.01
17 5 2 10
200
100
TJ(Max)=150°C TC=25°C
0.1
250
1 10 VDS (Volts)
100
1000
0 0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W 1
PD
0.1
Ton
Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: April 2011
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AON6454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=100°C
10 TA=150°C TA=125°C
1
80
60
40
20
0 1
10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C)
0
25
50
75
100
125
150
TCASE (°C) Figure 13: Power De-rating (Note F)
40
10000
30
1000 Power (W)
Current rating ID(A)
TA=25°C
20
17 5 2 10
100
10 10
1 0.00001
0 0
25
50
75
100
125
0.001
0.1
10
TCASE (°C) Figure 14: Current De-rating (Note F)
1000
0 18
150
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1 PD
0.01 Single Pulse
Ton T
0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: April 2011
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AON6454A
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 0: April 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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