Transcript
AON6754 30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (1MOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Application
ID (at VGS=10V)
30V 85A
RDS(ON) (at VGS=10V)
< 1.8mΩ
RDS(ON) (at VGS = 4.5V)
< 3.3mΩ
100% UIS Tested 100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial
123456 Top View
VDS
D
Top View Bottom View 1
8
2
7
3
6
4
5
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS
Gate-Source Voltage TC=25°C
Continuous Drain Current G Pulsed Drain Current Continuous Drain Current
C
V A
329 52
IDSM
TA=70°C
±20 66
IDM TA=25°C
Units V
85
ID
TC=100°C
Maximum 30
A
42
Avalanche Current C
IAS
65
A
Avalanche energy L=0.05mH C
EAS
106
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns TC=25°C
PD
TC=100°C TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev1: Mar 2012
7.3
Steady-State Steady-State
RθJA RθJC
W
4.7
TJ, TSTG
Symbol t 2 10s
W
33
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
83
°C
-55 to 150
Typ 14 40 1.1
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Max 17 55 1.5
Units °C/W °C/W °C/W
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AON6754
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
100 1.4
VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd tD(on)
nA
2.4
V
1.5
1.8
2.1
2.6
2.1
3.3
VGS=10V, VDS=15V, ID=20A
0.7
mΩ mΩ S
0.6
V
85
A
2796
VGS=0V, VDS=0V, f=1MHz
mA
100
90
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge
1.7
0.39
DYNAMIC PARAMETERS Ciss Input Capacitance
Units V
0.5 TJ=125°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
pF
1200
pF
165
pF
1.5
2.3
Ω
46.8
64
nC
22.3
30
nC
8.4
nC
Gate Drain Charge
8.6
nC
Turn-On DelayTime
9.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
6.3
ns
35.8
ns
tf
Turn-Off Fall Time
12.3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
20
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
40
ns nC
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Mar 2012
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AON6754
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100 4V
VDS=5V
3.5V
80
80 4.5V
60
60 ID(A)
ID (A)
10V
40
40
125°C VGS=3V
20
20 25°C 0
0 0
1
2
3
4
0
5
4
2
3
4
5
6
Normalized On-Resistance
1.6
3 RDS(ON) (mΩ Ω)
1
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
VGS=4.5V 2
1
VGS=10V
VGS=10V ID=20A
1.4
1.2
1
VGS=4.5V ID=20A
0.8
0 0
5
0
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
1.0E+01
5 ID=20A
125°C 1.0E+00
4
125°C
IS (A)
RDS(ON) (mΩ Ω)
1.0E-01 3
1.0E-02 25°C
2 1.0E-03 25°C
1
1.0E-04 1.0E-05
0 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev1: Mar 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AON6754
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
4500
3500 Capacitance (pF)
VGS (Volts)
4000
VDS=15V ID=20A
8
6
4
Ciss
3000 2500 2000 1500
Coss
1000
2
500 0 0
10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics
50
0
RDS(ON)
10µs
10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
100µs
10.0
1ms 10ms
DC 1.0
TJ(Max)=150°C TC=25°C
0.1
400
10µs Power (W)
100.0
5
25
500
1000.0
ID (Amps)
Crss
0
TJ(Max)=150°C TC=25°C
17 5 2 10
300 200 100
0.0
0 0.01
0.1
1 VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
PD
0.1 Single Pulse
Ton T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev1: Mar 2012
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AON6754
100
100
80
80 Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
40
20
60
40
20
0
0 0
25
50
75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F)
150
0
25
50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F)
150
10000 TA=25°C
Power (W)
1000
100
10
1 0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1 PD
0.01
Single Pulse Ton T
0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev1: Mar 2012
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AON6754
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev1: Mar 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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