Transcript
AOT210L/AOB210L 30V N-Channel MOSFET
General Description
Product Summary
The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.
VDS
30V 105A
ID (at VGS=10V)
< 2.9mΩ (< 2.6mΩ∗)
RDS(ON) (at VGS=10V)
< 3.7mΩ (< 3.5mΩ∗)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested 100% Rg Tested
TO-263
TO220 Top View
Top View
Bottom View D
D2PAK
Bottom View
D
D D
D
G G
D
S S
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G
TC=25°C
Pulsed Drain Current C Continuous Drain Current
Units V
±20
V A
400 20
IDSM
TA=70°C
Maximum 30
82
IDM TA=25°C
S
S
105
ID
TC=100°C
G
G
A
16
Avalanche Current C
IAS, IAR
68
A
Avalanche energy L=0.1mH C
EAS, EAR
231
mJ
TC=25°C Power Dissipation B
TA=25°C Power Dissipation A
Junction and Storage Temperature Range
1.9
Steady-State Steady-State
RθJA RθJC
W
1.2
TJ, TSTG
Symbol t ≤ 10s
W
88
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
176
PD
TC=100°C
-55 to 175
Typ 12 54 0.7
°C
Max 15 65 0.85
Units °C/W °C/W °C/W
* Surface mount package TO263
Rev0 : Sep 2010
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AOT210L/AOB210L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
400
TJ=55°C
5 100
VGS=4.5V, ID=20A TO220
3
3.7
VGS=10V, ID=20A TO263
2.1
2.6
VGS=4.5V, ID=20A TO263 VDS=5V, ID=20A
2.7 78
3.5
0.65
1
V
105
A
VSD
IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous CurrentG
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
V A
4.7
Forward Transconductance
Crss
nA
2.9
gFS
Output Capacitance
2.2
3.7
TO220
Coss
1.7
µA
2.4
VGS=10V, ID=20A
IS
Units V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
ID=250µA, VGS=0V VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
mΩ
S
2800
3520
4300
pF
920
1320
1720
pF
50
90
120
pF
0.5
1
1.5
Ω
39
48
58
nC
17
22
27
nC
7
9
11
nC
4
7
10
nC
VGS=10V, VDS=20V, RL=0.75Ω, RGEN=3Ω
11
ns
10
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
14
21
28
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
40
58
76
38
ns
11
ns ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AOT210L/AOB210L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100
10V 7V
VDS=5V
3.5V
80
3V
80
60 ID(A)
ID (A)
60
40
40
20
20
125°C 25°C
Vgs=2.5V 0
0 0
1
2
3
4
1
5
8
2
2.5
3
3.5
4
Normalized On-Resistance
2
6 RDS(ON) (mΩ)
1.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
4
2 VGS=10V
1.8
VGS=10V ID=20A
1.6
17 VGS=4.5V5 ID=20A 2 10
1.4 1.2 1 0.8
0 0
5
0
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02
8 ID=20A
1.0E+01
40 1.0E+00
6 IS (A)
RDS(ON) (mΩ)
125°C 125°C 4
1.0E-01 25°C
1.0E-02 1.0E-03
2
1.0E-04
25°C
1.0E-05 0.0
0 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev0 : Sep 2010
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0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOT210L/AOB210L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000
10 VDS=20V ID=20A
4000 Capacitance (pF)
VGS (Volts)
8
6
4
2
3000
2000 Coss 1000
0 10
20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics
50
0
10µs
RDS(ON) limited
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
1ms 10ms
DC 1.0
TJ(Max)=175°C TC=25°C
0.0 0.01
TJ(Max)=175°C TC=25°C
100µs
10.0
0.1
500
10µs
0.1
1 VDS (Volts)
Power (W)
100.0
5
600
1000.0
ID (Amps)
Crss
0 0
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
17 5 2 10
400 300 200
10
100
100 0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
ZθJC Normalized Transient Thermal Resistance
Ciss
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.85°C/W
1
PD
0.1
Ton
0.01 0.00001
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOT210L/AOB210L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100 TA=150°C TA=125°C 10
160 120 80 40 0 0
1
10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C)
120
25
50
75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F)
175
1000
90 Power (W)
Current rating ID(A)
TA=25°C
60
17 5 2 10
10 30
0 0
10 ZθJA Normalized Transient Thermal Resistance
100
1
25
50
75
100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F)
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
175
1 0.001
0.1
10
0
1000
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=65°C/W
0.1 PD
0.01 Single Pulse
0.001 0.01
0.1
1
Ton
10
T
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0 : Sep 2010
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AOT210L/AOB210L
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev0 : Sep 2010
Vgs
Isd
L
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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