Transcript
AOTF3N90 900V, 2.4A N-Channel MOSFET
General Description
Product Summary
The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V)
1000V@150 2.4A
RDS(ON) (at VGS=10V)
< 6.7Ω
100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF3N90L Top View 32
TO-220F
12
AOTF3N90
G
D
S
4
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current
VGS TC=25°C TC=100°C
ID
AOTF3N90 900
Units V
±30
V
2.4* 1.5*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
2
A
Repetitive avalanche energy C
EAR
60
mJ
120 5 35
mJ V/ns W
0.3 -55 to 150
W/ oC °C
300
°C
AOTF3N90 65 3.6
Units °C/W °C/W
Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev0: Oct 2012
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6.7
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AOTF3N90
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
Min
ID=2502A, VGS=0V, TJ=25°C
900
Typ
Max
Units
STATIC PARAMETERS BVDSS
Drain-Source Breakdown Voltage
BVDSS /1TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
ID=2502A, VGS=0V, TJ=150°C
1000
V
ID=2502A, VGS=0V
0.85
V/ oC
VDS=900V, VGS=0V
1
VDS=720V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100 3.6
4.2
4.5
nΑ V
6.7
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
5.5
gFS
Forward Transconductance
VDS=40V, ID=1.5A
3
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS ISM
V
Maximum Body-Diode Continuous Current
2.4
A
Maximum Body-Diode Pulsed Current
6.7
A
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Total Gate Charge Qg Qgs
Gate Source Charge
Qgd tD(on) tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
Qrr
S 1
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
µA
0.77
350
444
540
pF
22
34
45
pF
1.7
3.3
4.7
pF
1.2
2.6
4.0
Ω
11
16
nC
6 VGS=10V, VDS=720V, ID=3A
2.7
nC
Gate Drain Charge
4.1
nC
Turn-On DelayTime
19
ns
VGS=10V, VDS=450V, ID=3A, RG=25Ω IF=3A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
28
ns
42
ns
24
ns
520
655
790
5
7
9
ns µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2A, VDD=150V, RG=25 , Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Oct 2012
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AOTF3N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5
10
-55°C VDS=40V
4 10V 6.5V 125°C
ID(A)
ID (A)
3
6V
1
2 VGS=5.5V
25°C
1
0
0.1 0
5
10
15
20
25
30
2
4
6 8 VGS(Volts) Figure 2: Transfer Characteristics
VDS (Volts) Fig 1: On-Region Characteristics 15 Normalized On-Resistance
3
12 VGS=10V RDS(ON) (Ω Ω)
10
9
6
3
2.5 VGS=10V ID=1.5A
2 1.5 1 0.5 0
0 0
1.5
3
4.5
6
-100
7.5
-50
0
50
100
150
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2
1E+02
1E+00 40 125°C IS (A)
BVDSS (Normalized)
1E+01 1.1
1
1E-01 25°C 1E-02 1E-03
0.9
1E-04 0.8
1E-05 -100
50 100 150 200 TJ (°C) Figure 5: Break Down vs. Junction Temparature
Rev0: Oct 2012
-50
0
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOTF3N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000
15 VDS=720V ID=3A Capacitance (pF)
VGS (Volts)
12
9
6
1000
Ciss
100
Coss
10
Crss
3
1
0 0
4
8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics
0.1
20
1
10 VDS (Volts) Figure 8: Capacitance Characteristics
100
10
3
10µs RDS(ON) limited
100µs
1
2 ID (Amps)
Current rating ID(A)
2.5
1.5
1ms DC
10ms
0.1
1
0.1s 1s
TJ(Max)=150°C TC=25°C
0.5 0.01
0 0
25
50 75 100 125 TCASE (°C) Figure 9: Current De-rating (Note B)
1
150
10
100
1000
VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF3N90 (Note F)
Zθ JC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.6°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01
Single Pulse
Ton T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF3N90 (Note F)
Rev0: Oct 2012
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AOTF3N90
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ +
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs Ig Charge
Res istive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
+ VDC
90% Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT Vgs
Vds -
Isd Vgs
Ig
Rev0: Oct 2012
Isd
L
+ Vdd
trr
dI/dt IRM
Vdd
VDC
-
IF
Vds
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