Transcript
AP0203GMT-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
D
BVDSS
30V
RDS(ON)
SO-8 Compatible with Heatsink Low On-resistance
ID
G
RoHS Compliant & Halogen-Free
2.2m 155A
S D
Description
D D
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile.
D
S
S
S
G
PMPAK 5x6
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current (Chip)
ID@TA=25 ID@TA=70
155
A
Continuous Drain Current
3
38
A
Continuous Drain Current
3
30
A
300
A
83.3
W
5
W
28.8
mJ
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation
PD@TA=25
Total Power Dissipation 4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c Rthj-a
Parameter
Value
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
3
Units
1.5
/W
25
/W
1 200910191
AP0203GMT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=30A
-
-
2.2
m
VGS=4.5V, ID=20A
-
-
3.6
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=20A
-
80
-
S
V
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=20A
-
38
60
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
22
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
13.5
-
ns
tr
Rise Time
ID=1A
-
11.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-
52
-
ns
tf
Fall Time
RD=15
-
42
-
ns
Ciss
Input Capacitance
VGS=0V
-
3030 4850
pF
Coss
Output Capacitance
VDS=25V
-
820
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
420
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
-
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
2 2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
47
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
57
-
nC
Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 2 o 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec, 60 C/W at steady state.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25
, IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP0203GMT-HF 200
300
10V 7.0V 6.0V 5.0V V G = 4.0 V
ID , Drain Current (A)
250
200
10V 7.0V 6.0V 5.0V V G =4.0V
T C =150 o C 160
ID , Drain Current (A)
T C =25 o C
150
100
120
80
40 50
0
0 0.0
2.0
4.0
6.0
8.0
0.0
10.0
V DS , Drain-to-Source Voltage (V)
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
3.2
I D =30A V G =10V
I D =20A T C =25 o C
)
Normalized RDS(ON)
2.8
RDS(ON) (m
1.0
2.4
1.6
1.2
0.8
2
0.4
1.6 2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6
Normalized VGS(th) (V)
40
IS(A)
30
T j =150 o C
T j =25 o C
20
10
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP0203GMT-HF 10
f=1.0MHz
4000
VGS , Gate to Source Voltage (V)
I D =20A 8
C (pF)
3000
6
V DS =15V
C iss
2000
4
1000
C oss C rss
2
0
0 0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Operation in this area limited by RDS(ON)
ID (A)
100
100us
1ms 10
10ms 100ms T C =25 o C Single Pulse
DC
1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM 0.01
t Single Pulse
T Duty factor = t/T Peak Tj = PDM x R thjc + T c
0.001 0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
