Transcript
AP04N70BP-A RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
100% Avalanche Test
BVDSS
650V
Fast Switching Characteristic
RDS(ON)
2.4
Simple Drive Requirement
ID
4A
Description AP04N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D
The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.
TO-220
S
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID@TC=25
Continuous Drain Current, V GS @ 10V
4
A
ID@TC=100
Continuous Drain Current, V GS @ 10V
2.5
A
15
A
62.5
W
0.5
W/
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation Linear Derating Factor 2
100
mJ
Avalanche Current
4
A
EAR
Repetitive Avalanche Energy
4
mJ
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
EAS
Single Pulse Avalanche Energy
IAR
Thermal Data Symbol
Value
Parameter
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Data & specifications subject to change without notice
200302072-1/6
AP04N70BP-A o
Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS VDSS/ Tj
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25
, ID=1mA
Min.
Typ.
Max. Units
650
-
-
-
0.6
-
V V/
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2A
-
-
2.4
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
2.5
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=4A
-
16.7
-
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C) o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
4.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.9
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
11
-
ns
tr
Rise Time
ID=4A
-
8.3
-
ns
td(off)
Turn-off Delay Time
RG=10
-
23.8
-
ns
tf
Fall Time
RD=75
-
8.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
-
pF
Coss
Output Capacitance
VDS=25V
-
65
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
4
A
-
-
15
A
-
-
1.5
V
VGS=10V
Source-Drain Diode Symbol IS ISM VSD
Parameter
Test Conditions VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode ) 1
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25
, IS=4A, VGS=0V
Max. Units
Notes: 1.Pulse width limited by max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=25mH , RG=25
, IAS=4A.
3.Pulse test
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AP04N70BP-A
2.5
2
T C =25 o C
T C =150 o C
V G =10V
V G =6.0V
V G =6.0V
2
1.5
ID , Drain Current (A)
V G =5.0V ID , Drain Current (A)
V G =10V
1.5
V G =4.5V 1
V G =5.0V V G =4.5V
1
V G =4.0V 0.5
0.5
V G =4.0V V G =3.5V
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
I D =2A
2.5
V G =10V 1.1
Normalized RDS(ON)
Normalized BVDSS (V)
2
1
1.5
1
0.9 0.5
0
0.8 -50
0
50
100
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction Temperature
150
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance v.s. Junction Temperature
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AP04N70BP-A
40
4.5
4
3
2.5
PD (W)
ID , Drain Current (A)
3.5
2
20
1.5
1
0.5
0
0 25
50
75
100
125
150
0
50
T c , Case Temperature ( o C )
100
150
T c , Case Temperature ( o C )
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
Normalized Thermal Response (Rthjc)
1
ID (A)
10
10us 100us 1
1ms 10ms 0.1
100ms
DUTY=0.5
0.2
0.1
0.1 0.05
PDM
t
0.02 0.01
SINGLE PULSE
T Duty factor = t/T Peak Tj = P DM x Rthjc + TC
T c =25 o C Single Pulse 0.01
0.01 1
10
100
1000
V DS (V)
Fig 7. Maximum Safe Operating Area
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4/6
AP04N70BP-A
16
f=1.0MHz
10000
I D =4A
V DS =320V
12
Ciss
V DS =400V 10
V DS =480V C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
Coss
6
4
Crss 2
0
1 0
5
10
15
20
25
1
6
11
16
21
26
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
5
4
10 3
T j = 25 o C
VGS(th) (V)
IS (A)
T j =150 o C
2
1
1
0.1
0 0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s. Junction Temperature
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AP04N70BP-A
VDS 90%
RD
VDS
D
RG
TO THE OSCILLOSCOPE 0.5x RATED VDS
G
10% +
S 10 V
VGS
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG VDS
10V 0.8 x RATED VDS
G S
QG
TO THE OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
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