Transcript
AP05N50EH/J-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
100% Avalanche Test
D
Fast Switching Characteristic G
Simple Drive Requirement RoHS Compliant & Halogen-Free
BVDSS
500V
RDS(ON)
1.6
ID
5A
S
Description
GD
The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.
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TO-252(H)
G
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP05N50EJ) is available for low-profile applications.
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TO-251(J)
Absolute Maximum Ratings Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25
Continuous Drain Current, V GS @ 10V
5
A
20
A
73.5
W
2
W
12.5
mJ
5
A
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation
PD@TA=25
Total Power Dissipation
4 2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c
Value
Parameter Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
4
Unit
1.7
/W
62.5
/W
110
/W 1 201008041
AP05N50EH/J-HF o
Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
500
-
-
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2A
-
-
1.6
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
3.5
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+10
uA
ID=1A
-
20
32
nC
3
V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=400V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
8
-
nC
3
td(on)
Turn-on Delay Time
VDD=250V
-
10
-
ns
tr
Rise Time
ID=1A
-
4
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-
27
-
ns
tf
Fall Time
VGS=10V
-
18
-
ns
Ciss
Input Capacitance
VGS=0V
-
775
1240
pF
Coss
Output Capacitance
VDS=25V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.5
-
Min.
Typ.
IS=2A, VGS=0V
-
-
1.5
V
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
Test Conditions
3 3
Max. Units
trr
Reverse Recovery Time
IS=2A, VGS=0V,
-
250
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1.75
-
uC
Notes: 1.Pulse width limited by Max. junction temperature. o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25
, IAS=5A.
3.Pulse test 2
4.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
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AP05N50EH/J-HF 8
5
ID , Drain Current (A)
T C =25 C 6
4
V G =5.0V
10V 8.0V 7.0V 6.0V
T C =150 o C 4
ID , Drain Current (A)
10V 8.0V 7.0V 6.0V
o
V G =5.0V 3
2
2 1
0
0 0
4
8
12
16
20
0
24
V DS , Drain-to-Source Voltage (V)
5
10
15
20
25
30
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =1mA
I D =2A V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
2
1
0.9
0
0.8 -40
0
40
80
-50
120
0
50
100
150
o
o
T j , Junction Temperature ( C )
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
8
1.5
I D =250uA
T j = 150 o C
4
Normalized VGS(th) (V)
IS (A)
6
T j = 25 o C
1
0.5
2
0
0 0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP05N50EH/J-HF f=1.0MHz 1200
12
I D =1A V DS =400V
1000
8
C (pF)
VGS , Gate to Source Voltage (V)
10
800
6
600
4
400
2
200
0
0 0
4
8
12
16
20
24
C iss
C oss C rss 1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area limited by RDS(ON)
ID (A)
10
100us
1ms 1
10ms 100ms 1s DC
o
T c =25 C Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t 0.02
T
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1 1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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