Transcript
AP0904GH/J-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low On-resistance
BVDSS
D
40V
RDS(ON)
Simple Drive Requirement Fast Switching Characteristic
ID
G
RoHS Compliant & Halogen-Free
10m 51A
S
Description G
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP0904GJ) are available for low-profile applications.
G
D
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, V GS @ 10V
51
A
ID@TC=100
Continuous Drain Current, V GS @ 10V
32
A
200
A
44.6
W
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c
Value
Parameter Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
3
Units
2.8
/W
62.5
/W
110
/W 1 200912012
AP0904GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
VGS=10V, ID=30A
-
-
10
m
VGS=4.5V, ID=20A
-
-
15
m V
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=20A
-
45
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=20A
-
9
14.4
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
6.5
-
ns
tr
Rise Time
ID=1A
-
6.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3 ,VGS=10V
-
20
-
ns
tf
Fall Time
RD=20
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
680
1080
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
2 2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP0904GH/J-HF 120
100
10V 7.0V 6.0V 5.0V
ID , Drain Current (A)
100
80
V G = 4.0V
80
10V 7.0V 6.0V 5.0V
T C =150 o C
ID , Drain Current (A)
T C =25 o C
60
40
V G =4.0V 60
40
20 20
0
0 0
2
4
6
8
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
13
2.0
I D =20A
I D =30A V G =10V
T C =25 o C
RDS(ON) (m
)
Normalized RDS(ON)
12
11
10
1.6
1.2
0.8 9
0.4
8 2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6
Normalized VGS(th) (V)
30
IS(A)
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
20
o T j =150 C
T j =25 o C
10
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP0904GH/J-HF f=1.0MHz
1200
I D =20A 1000 8
V DS =20V 800
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss 600
4 400
2
C oss C rss
200
0
0 0
4
8
12
16
1
20
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area limited by RDS(ON)
ID (A)
100
100us
10
1ms T C =25 o C Single Pulse
10ms 100ms DC
1 0.1
1
10
100
Normalized Thermal Response (Rthjc)
1000
Duty factor = 0.5
0.2
0.1
0.1 0.05
PDM
t 0.02
T
0.01
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
