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Datasheet For Ap0904gh-hf By Advanced Power Electronics Corp.

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AP0904GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D 40V RDS(ON) Simple Drive Requirement Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 10m 51A S Description G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP0904GJ) are available for low-profile applications. G D D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, V GS @ 10V 51 A ID@TC=100 Continuous Drain Current, V GS @ 10V 32 A 200 A 44.6 W 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Value Parameter Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maixmum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 3 Units 2.8 /W 62.5 /W 110 /W 1 200912012 AP0904GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance 2 Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 40 - - VGS=10V, ID=30A - - 10 m VGS=4.5V, ID=20A - - 15 m V V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 VDS=10V, ID=20A - 45 - S gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V - - +100 nA ID=20A - 9 14.4 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC 2 td(on) Turn-on Delay Time VDS=20V - 6.5 - ns tr Rise Time ID=1A - 6.5 - ns td(off) Turn-off Delay Time RG=3.3 ,VGS=10V - 20 - ns tf Fall Time RD=20 - 10 - ns Ciss Input Capacitance VGS=0V - 680 1080 pF Coss Output Capacitance VDS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Min. Typ. IS=20A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP0904GH/J-HF 120 100 10V 7.0V 6.0V 5.0V ID , Drain Current (A) 100 80 V G = 4.0V 80 10V 7.0V 6.0V 5.0V T C =150 o C ID , Drain Current (A) T C =25 o C 60 40 V G =4.0V 60 40 20 20 0 0 0 2 4 6 8 0 2 V DS , Drain-to-Source Voltage (V) 4 6 8 10 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 13 2.0 I D =20A I D =30A V G =10V T C =25 o C RDS(ON) (m ) Normalized RDS(ON) 12 11 10 1.6 1.2 0.8 9 0.4 8 2 4 6 8 -50 10 Fig 3. On-Resistance v.s. Gate Voltage 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 Normalized VGS(th) (V) 30 IS(A) 0 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) 20 o T j =150 C T j =25 o C 10 1.2 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP0904GH/J-HF f=1.0MHz 1200 I D =20A 1000 8 V DS =20V 800 C (pF) VGS , Gate to Source Voltage (V) 10 6 C iss 600 4 400 2 C oss C rss 200 0 0 0 4 8 12 16 1 20 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) ID (A) 100 100us 10 1ms T C =25 o C Single Pulse 10ms 100ms DC 1 0.1 1 10 100 Normalized Thermal Response (Rthjc) 1000 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4