Transcript
Advanced Power Electronics Corp.
AP20GT60SW-HF-3
N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching Low Saturation Voltage Typical V CE(sat) = 1.8V at IC=20A
VCES
600V
IC
20A
C (tab) G
Built-in Fast Recovery Diode
C C
RoHS-compliant, halogen-free
E
G
TO-3P (W)
E
Absolute Maximum Ratings Ra ing
Units
VCES
Symbol
Collector-Emitter Voltage
Parameter
600
V
VGE
Gate-Emitter Voltage
±20
V
IC at TC =25°C
Collector Current
40
A A
IC at TC =100°C
Collector Current
20
ICM
Pulsed Collector Current 1
160
A
IDM
Collector to Emitter Diode Forward Current 1
40
A
PD at TC =25°C
Maximum Power Dissipation
125
W
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
150
o
TL
Maximum Lead Temp. for Soldering Purposes,
300
°C
C
1/8" from case for 5 seconds .
Notes: 1. Pulse width limited by max. junc ion temperature .
Thermal Data Parameter
Symbol Rthj-c
Value
Rthj-c(Diode) Thermal Resistance Junction-Case Rthj-a
Thermal Resistance Junction-Ambient
Units
1
o
1.5
o
Thermal Resistance Junction-Case
C/W C/W
o
C/W
40
Electrical Specifications at Tj=25°C (unless otherwise specified) Test Conditions VGE=±20V, VCE=0V
Symbol I GES
Parameter Gate-to-Emitter Leakage Current
ICES
Collector-Emitter Leakage Current
VCE=600V, VGE=0V
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=20A
VGE(th)
Gate Threshold Voltage
Qg
Total Gate Charge
Qge Qgc td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon Eoff Cies
Input Capacitance
Coes
Min. -
Typ. -
Max. ±100
Units nA
-
-
100
uA
-
1.8
2.3
V
VCE=VGE, IC=250uA
2
-
6
V
IC=20A
-
100
160
nC
Gate-Emitter Charge
VCE=480V
-
24
-
nC
Gate-Collector Charge
VGE=15V VCE=480V, Ic=20A, VGE=15V, RG=5Ω Inductive Load
-
40
-
nC
-
50
-
ns
-
20
-
ns
-
135
-
ns
-
190
380
ns
Turn-On Switching Loss
-
0.3
-
mJ
Turn-Off Switching Loss
-
0.9
-
mJ
VGE=0V
-
3400
5440
pF
Output Capacitance
VCE=30V
-
75
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
VF
FRD Forward Voltage
IF=20A
-
1.65
2
V
trr
FRD Reverse Recovery Time
IF=10A
-
50
-
ns
Qrr
FRD Reverse Recovery Charge
di/dt = 100 A/µs
80
-
nC
Ordering Information AP20GT60SW-HF-3TB : in RoHS-compliant halogen-free TO-3P, shipped in tubes (1440 pcs/carton) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
201105102-3
1/4
Advanced Power Electronics Corp.
AP20GT60SW-HF-3
200
16
IC , Collector Current (A)
T C =25 o C 160
VGE , Gate -Emitter Voltage (V)
20V 18V 15V 12V V GE =10V
120
80
40
I C =20A V CC =480V
12
8
4
0
0 0
2
4
6
8
10
0
12
20
40
60
80
100
120
Q G , Gate Charge (nC)
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Gate Charge Characterisitics
120
4
V GE = 15 V
V GE =15V T C =25 ° C
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current(A)
100
T C =150 ° C
80
60
40
20
0
3
I C = 40 A I C =20A
2
1
0 0
1
2
3
4
5
6
0
40
80
120
160
Junction Temperature ( o C)
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage Characteristics
Fig 4. Typical Collector- Emitter Voltage vs. Junction Temperature f=1.0MHz
1.6
5000
I C =10mA
Capacitance (pF)
Normalized VGE(th) (V)
4000
C ies
1.2
0.8
3000
2000
0.4 1000
0
C oes C res
0 -50
0
50
100
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage vs. Junction Temperature
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
150
1
5
9
13
17
21
25
29
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
2/4
Advanced Power Electronics Corp.
AP20GT60SW-HF-3 1
Normalized Thermal Response (Rthjc)
160
Power Dissipation (W)
120
80
40
Duty factor=0.5
0.2
0.1
01
0.05
PDM
t T
0.02
Duty factor t/T Peak Tj PDM x R hjc
0 01
TC
Single Pulse
0 01
0 0
50
100
150
0.00001
200
0.0001
0.001
Junction Temperature ( o C )
Fig7. Power Dissipation vs. Junction Temperature
0.1
1
10
Fig 8. Effective Transient Thermal Impedance
20
20
T C =25 o C
o T C = 150 C
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
0.01
t , Pulse Width (s)
15
10
5
I C = 60 A 40 A 20 A 0
15
10
5
I C = 60 A 40 A 20 A 0
0
4
8
12
16
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
20
IC, Peak Collector Current(A)
V GE =15V
IF , Forward Current (A)
16
o
T j =25 C
T j =150 o C 12
8
4
o T C =125 C
100
Safe Operating Area 0
1
0
0.4
0.8
1.2
1.6
2
V F , Forward Voltage (V)
Fig 11. Forward Characteristic of Diode
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
2.4
01
1
10
100
1000
10000
V CE ,Collector-Emitter Voltage(V)
Fig 12. Turn-off SOA
3/4
Advanced Power Electronics Corp.
AP20GT60SW-HF-3
Package Dimensions: TO-3P E A
Millimeters
SYMBOLS
φ A
b b1 b2 c c1
c1 D D1
L2
b1
b2
L
MIN
NOM
MAX
4.50
4.80
5.10
0.80
1.00
1.30
1.80
2.50
3.20
1.30
--
2.30
0.40
0.60
0.90
1.40
--
2.20
D
19.70
20.00
20.30
D1
14.70
15.00
15.30
E
15.30
--
16.10
e
4.45
5.45
6.45
L
17.50
--
20.50
L2
1.00
--
3.70
φ
3.00
3.20
3.40
1. All dimensions are in millimeters.
c
2. Dimensions do not include mold protrusions.
b
e
Marking Information: Product: AP20GT60S
20GT60SW YWWSSS
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
Package code W = RoHS-compliant, halogen free TO-3P
Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence
4/4
