Datasheet For Ap2325geu6-hf-3tr By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. AP2325GEU6-HF-3 P-channel Enhancement-mode Power MOSFET Simple Gate Drive D BV DSS Small Package Outline G Low Gate Charge -20V R DS(ON) 145mΩ ID RoHS-compliant, halogen-free -1.8A S Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D D The AP2325GEU6-HF-3 is in the popular SOT-363 ultra-small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in applications such as load switches. D G D SOT-363 (SC-70-6) Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID at TA =25°C ID at TA= 70°C Rating Units -20 V ±12 V Continuous Drain Current 3 -1,8 A Continuous Drain Current 3 -1.5 A -7.2 A 0.74 W 1 IDM Pulsed Drain Current PD at TA=25°C Total Power Dissipation TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Parameter Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient 3 Value Unit 170 °C/W Ordering Information AP2325GEU6-HF-3TR RoHS-compliant halogen-free SOT-363, shipped on tape and reel, 3000pcs/reel ©2013 Advanced Power Electronics Corp. USA www.a-powerusa.com 201308261-3 1/5 Advanced Power Electronics Corp. AP2325GEU6-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-1.5A - 120 145 mΩ VGS=-2.5V, ID=-1.0A - 145 200 mΩ -0.3 -0.7 -1 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-5V, ID=-1A - 4.6 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=±12V, VDS=0V - - ±30 uA Qg Total Gate Charge ID=-1A - 6 9.6 nC Qgs Gate-Source Charge VDS=-10V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC td(on) Turn-on Delay Time VDS=-10V - 4 - ns tr Rise Time ID=-1A - 22 - ns td(off) Turn-off Delay Time RG=3.3Ω - 16 - ns tf Fall Time VGS=-5V - 18 - ns Ciss Input Capacitance VGS=0V - 500 800 pF Coss Output Capacitance VDS=-10V - 70 Crss Reverse Transfer Capacitance f=1.0MHz - 55 Min. Typ. - - pF - pF Source-Drain Diode Symbol Parameter 2 Forward On Voltage VSD Test Conditions IS=-0.6A, VGS=0V Max. Units -1.2 V trr Reverse Recovery Time IS=-1A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse test - pulse width < 300µs , duty cycle < 2% 3.Surface mounted on 1in2 copper pad of FR4 board ; 260°C/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2013 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. AP2325GEU6-HF-3 Typical Electrical Characteristics 8 10 -5.0V -4.5V -3.5V -2.5V -ID , Drain Current (A) 8 T A = 150 o C -ID , Drain Current (A) T A =25 o C 6 V G = -2.0V 4 -5.0V -4.5V -3.5V -2.5V 6 V G = -2.0V 4 2 2 0 0 0 2 4 6 8 0 3 4 5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 200 2 I D = -1A I D = -1.5A V GS = -4.5V T A =25 o C 1.6 Normalized RDS(ON) 180 RDS(ON) (mΩ ) 2 1 -V DS , Drain-to-Source Voltage (V) 160 140 1.2 0.8 0.4 120 0 100 1 2 3 4 -50 5 -V GS , Gate-to-Source Voltage (V) Fig 3. 0 50 100 150 T j , Junction Temperature ( o C) On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 2 2 I D = -250uA 1.6 T j =150 o C Normalized -VGS(th) 1.6 T j =25 o C -IS(A) 1.2 0.8 1.2 0.8 0.4 0.4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2013 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.4 -50 0 50 T j , Junction Temperature ( 100 o 150 C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 3/5 Advanced Power Electronics Corp. AP2325GEU6-HF-3 Typical Electrical Characteristics (cont.) f=1.0MHz 8 800 6 600 C (pF) -VGS , Gate to Source Voltage (V) I D = -1A V DS = -10V C iss 4 400 2 200 0 0 0 2 4 6 8 C oss C rss 1 10 5 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 100us DUTY=0.5 Normalized Thermal Response (Rthja) Operation in this area limited by RDS(ON) 1ms -ID (A) 1 10ms 100ms 0.1 1s DC o T A =25 C Single Pulse 0.01 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 260°C/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area p Fig 10. Effective Transient Thermal Impedance 2.4 VG -ID , Drain Current (A) 2 QG 1.6 -4.5V QGS 1.2 QGD 0.8 0.4 Charge Q 0 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 11. Switching Time Waveform ©2013 Advanced Power Electronics Corp. USA www.a-powerusa.com Fig 12. Gate Charge Waveform 4/5 Advanced Power Electronics Corp. AP2325GEU6-HF-3 Package Dimensions: SOT-363 Millimeters D b E1 E SYMBOLS MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A2 0.70 0.85 1.00 b 0.15 0.25 0.35 C 0.05 0.15 0.25 D 1.80 2.00 2.20 E1 1.15 1.25 1.35 E 1.80 2.15 2.50 0.65 (ref.) e L e A A2 0.26 0.36 0.46 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. A1 C L Marking Information: Product: .4U = AP2325GEU6-HF-3 .4UXX ©2013 Advanced Power Electronics Corp. USA www.a-powerusa.com Date/lot code For details of how to convert this to standard YYWW date code format, please contact us directly. 5/5