Transcript
AP25N10GH/J-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low Gate Charge
BVDSS
D
100V
RDS(ON)
Single Drive Requirement RoHS Compliant & Halogen-Free
80m
ID
G
23A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
G
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP25N10GJ) are available for low-profile applications.
G
D
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
23
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
14.6
A
1
IDM
Pulsed Drain Current
80
A
PD@TC=25
Total Power Dissipation
96
W
Linear Derating Factor
0.77
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c
Value
Parameter Maximum Thermal Resistance, Junction-case 3
Units
1.3
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
1 200906163
AP25N10GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS VDSS/
Parameter
Test Conditions
Drain-Source Breakdown Voltage Tj
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25
, ID=1mA
Min.
Typ.
Max. Units
100
-
-
-
0.14
-
V/ m
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=16A
-
-
80
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=16A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=100V, VGS=0V
-
-
25
uA
-
-
250
uA
VGS=+20V, VDS=0V
-
-
+100
nA
ID=16A
-
19
30
nC
o
Drain-Source Leakage Current (T j=125 C) VDS=80V, VGS=0V
IGSS
Gate-Source Leakage 2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6
-
nC
VDD=50V
-
10
-
ns
-
28
-
ns
-
17
-
ns
2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=16A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=3.125
-
Ciss
Input Capacitance
VGS=0V
-
1060 1700
pF
Coss
Output Capacitance
VDS=25V
-
270
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Min.
Typ.
IS=16A, VGS=0V
-
-
1.3
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=16A, VGS=0V
-
90
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
380
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP25N10GH/J-HF 50
40
10V 9 .0V 8 .0V 7.0V
T C =25 C ID , Drain Current (A)
40
10V 9 .0V 8 .0V 7.0V
T C = 150 o C ID , Drain Current (A)
o
30
20
30
20
V G = 5 .0V 10
V G = 5 .0V
10
0
0 0
2
4
6
8
10
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
130
2.4
I D = 12 A
I D =16A V G =10V
T C =25 o C 2.0
RDS(ON) (m
)
Normalized RDS(ON)
110
90
1.6
1.2
70
0.8
0.4
50
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5
20
Normalized VGS(th) (V)
16
IS(A)
12
T j =150 o C
8
T j =25 o C
1.1
0.7
4
0
0.3
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP25N10GH/J-HF f=1.0MHz 10000
14
I D = 16 A V DS = 64 V V DS = 80 V V DS = 100 V
10
C iss
1000
C oss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
100
4
C rss
10
2
1
0 0
4
8
12
16
20
1
24
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us 10
ID (A)
1ms 10ms 100ms 1s DC
1
o
T C =25 C Single Pulse 0.1
Duty factor=0.5
0.2
0.1
0.1 0.05
PDM
t
0.02
T 0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse
0.01 0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
25
V DS =5V
o
T j =25 o C
VG
T j =150 C
ID , Drain Current (A)
20
QG 10V 15
QGS
QGD
10
5
Charge
Q
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
