Datasheet For Ap2609gy-hf-3tr By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. AP2609GY-HF-3 P-channel Enhancement-mode Power MOSFET Fast Switching Characteristics D Low Gate Charge BV DSS -20V Small Footprint, Low Profile R DS(ON) 57mΩ ID -5.1A G RoHS-compliant, halogen-free S Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium. D D G SOT-26 D D Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID at TA=25°C ID at TA=70°C Rating Units -20 V ±12 V Continuous Drain Current 3 -5.1 A Continuous Drain Current 3 -4.0 A -20 A 2 W 1 IDM Pulsed Drain Current PD at TA=25°C Total Power Dissipation Linear Derating Factor 0.016 W/°C TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Symbol Rthj-a Parameter Value Maximum Thermal Resistance, Junction-ambient 62.5 Unit °C/W Ordering Information AP2609GY-HF-3TR : in RoHS-compliant halogen-free SOT-26 shipped on tape and reel (3000pcs/reel) ©2013 Advanced Power Electronics Corp. USA www.a-powerusa.com 201203011-3 1/5 Advanced Power Electronics Corp. AP2609GY-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-5A - 40 57 mΩ VGS=-2.5V, ID=-3A - 60 100 mΩ -0.5 -0.7 -1.2 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-5V, ID=-3A - 10 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS= ±12V, VDS=0V - - ±100 nA Qg Total Gate Charge ID=-3A - 8.5 14 nC Qgs Gate-Source Charge VDS=-10V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3 - nC td(on) Turn-on Delay Time VDS=-10V - 10 - ns tr Rise Time ID=-1A - 20 - ns td(off) Turn-off Delay Time RG=3.3Ω - 27 - ns tf Fall Time VGS=-5V - 22 - ns Ciss Input Capacitance VGS=0V - 660 1050 pF Coss Output Capacitance VDS=-10V - 135 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Rg Gate Resistance f=1.0MHz - 7.2 14.4 Ω Min. Typ. Max. Units Source-Drain Diode Symbol Parameter 2 Test Conditions VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-3A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC Notes: 1.Pulse width limited maximum junction temperature. 2.Pulse test - pulse width < 300µs , duty cycle < 2% 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 156 °C/W when mounted on minimum copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2013 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. AP2609GY-HF-3 Typical Electrical Characteristics 16 16 -5.0V -4.5V -3.5V -2.5V -ID , Drain Current (A) 12 12 V G = -2.0V 8 4 0 V G = -2.0V 8 4 0 0 2 4 6 0 2 -V DS , Drain-to-Source Voltage (V) 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2 I D = -5A V GS = -4.5V I D =-3A T A =25 o C 1.6 Normalized RDS(ON) 70 RDS(ON) (mΩ ) -5.0V -4.5V -3.5V -2.5V T A = 150 o C -ID , Drain Current (A) T A =25 o C 60 1.2 0.8 50 0.4 40 1 2 3 4 -50 5 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 4 2 I D = -250uA 1.6 -IS(A) T j =150 o C Normalized -VGS(th) 3 T j =25 o C 2 1.2 0.8 1 0.4 0 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2013 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.2 -50 0 50 T j , Junction Temperature ( 100 o 150 C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 3/5 Advanced Power Electronics Corp. AP2609GY-HF-3 Typical Electrical Characteristics (cont.) f=1.0MHz 1000 I D = -3A V DS =-10V 5 800 4 C (pF) -VGS , Gate to Source Voltage (V) 6 3 C iss 600 400 2 200 1 C oss C rss 0 0 0 2 4 6 8 10 1 12 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) DUTY=0.5 -ID (A) 10 100us Operation in this area limited by RDS(ON) 1ms 1 10ms 100ms 0.1 1s DC T A =25 o C Single Pulse 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 156°C/W 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 8 8 -ID , Drain Current (A) -ID , Drain Current (A) V DS =-5V 6 4 2 6 4 2 T j =150 o C o T j =25 C T j =-40 o C 0 0 0 0.5 1 1.5 2 2.5 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics ©2013 Advanced Power Electronics Corp. USA www.a-powerusa.com 3 25 50 75 100 125 150 o T A , Ambient Temperature ( C ) Fig 12. Maximum Continuous Drain Current vs. Ambient Temperature 4/5 Advanced Power Electronics Corp. AP2609GY-HF-3 Package Dimensions: SOT-26 G L L Millimeters C A B D SYMBOLS MIN NOM MAX A 2.70 2.90 3.10 B 2.60 2.80 3.00 C 1.40 1.60 1.80 D 0.30 0.43 0.55 E 0.00 0.05 0.10 H 1.20REF G 1.90REF I 0.12REF J 0.37REF L 0.95REF H E 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. I J Marking Information: Laser Marking Product: YT = AP2609GY-HF-3 YTXX ©2013 Advanced Power Electronics Corp. USA www.a-powerusa.com XX = Date/lot code For details of how to convert this to standard YYWW date code format, please contact us directly. 5/5