Transcript
Advanced Power Electronics Corp.
AP26G40GEO-HF-3
Insulated Gate Bipolar Power Transistor
High Peak Current Capability
C
C
C
400V
VCE
High Input Impedance C
I CP 150A
Low 3.0V Gate Drive Strobe Flash Applications TSSOP-8
RoHS-compliant, halogen-free package
E
E
E
G
C G E
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VCE
Collector-Emitter Voltage
400
V
VGEP
Peak Gate-Emitter Voltage
±6
V
Pulsed Collector Current
150
A
Maximum Power Dissipation
1
W
Storage Temperature Range
-55 to 150
o
C
-55 to 150
o
C
ICP PD at TA=25°C TSTG TJ
1
Junction Temperature Range
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol
Parameter
Test Conditions VGE= ±6V, V CE=0V
Min. -
Typ. -
Max. ±10
Units
-
-
10
uA
-
4.5
9
V
0.3
-
1.2
V
IGES
Gate-Emitter Leakage Current
ICES
Collector-Emitter Leakage Current VCE=400V, VGE=0V
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=3V, ICP=150A (Pulsed)
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
Qg
Total Gate Charge
IC=40A
-
86
138
nC
Qge
Gate-Emitter Charge
VCE=200V
-
5.4
-
nC
Qgc
Gate-Collector Charge
VGE=4V
-
29
-
nC
td(on)
Turn-on Delay Time
VCC=320V
-
900
-
ns
tr
Rise Time
IC=150A
-
1.6
-
µs
td(off)
Turn-off Delay Time
RG=10Ω
-
170
-
ns
tf
Fall Time
VGE=3V
-
2.3
-
µs
Cies
Input Capacitance
VGE=0V
-
5170
8270
pF
Coes
Output Capacitance
VCE=30V
-
45
-
pF
Reverse Transfer Capacitance
f=1.0MHz
-
27
-
Cres RthJA
1
Thermal Resistance Junction-Ambient
-
-
125
uA
pF o
C/W
Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board
Ordering Information AP26G40GEO-HF-3TR : in RoHS-compliant halogen-free TSSOP-8 shipped on tape and reel (3000 pcs/reel) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
200908141-3 1/4
Advanced Power Electronics Corp.
AP26G40GEO-HF-3
Typical Electrical Characteristics 120
150
5.0V 4.0V 3.0V V G =2.5V
IC , Collector Current (A)
120
5.0V 4.0V 3.0V V G = 2.5V
T A = 150 o C 100
IC , Collector Current (A)
T A =25 o C
90
60
80
60
40
30 20
0
0
0
2
4
6
8
0
2
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
160
6
V GE = 3 .0V
V GE =3.0V VCE(sat) ,Saturation Voltage(V)
T A =25 o C IC , Collector Current(A)
4
V CE , Collector-Emitter Voltage (V)
120
o
T A =150 C
80
40
5
4
I C =100A 3
I C =60A 2
I C =20A 0
1
0
1
2
3
4
5
6
0
20
40
60
Fig 3. Typical Saturation Voltage Characteristics
100
120
140
160
Fig 4. Collector- Emitter Saturation Voltage vs. Junction Temperature
10
10
T A =25 o C
T A =150 o C VCE ,Collector-Emitter Voltage(V)
VCE ,Collector-Emitter Voltage(V)
80
T C , Case Temperature ( o C)
V CE , Collector-Emitter Voltage (V)
8
6
4
I C = 120A I C =80A I C =40A
2
0
8
6
4
I C =80A I C =60A I C =40A
2
0
0
1
2
3
4
V GE , Gate-Emitter Voltage(V)
Fig 5. Collector Current vs. Gate-Emitter Voltage
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
5
6
0
1
2
3
4
5
6
V GE , Gate-Emitter Voltage(V)
Fig 6. Collector Current vs. Gate-Emitter Voltage
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Advanced Power Electronics Corp.
AP26G40GEO-HF-3
Typical Electrical Characteristics (cont.) f=1.0MHz
10000
160
T C =70 o C ICP , Peak Collector Current (A)
C ies
C (pF)
1000
100
C oes C res 10
120
80
40
0 1
5
9
13
17
21
25
29
33
37
V GE , Gate-to-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V))
Fig 7. Typical Capacitance Characteristics
Fig 8. Maximum Pulse Collector Current
VCE RC
90% TO THE OSCILLOSCOPE
C VCE G
RG
VCC=320 V
10%
E
VGE
+
-
4V
VGE
td(off) tf
td(on) tr
Fig 9. Switching Time Test Circuit
Fig 10. Switching Time Waveform
6
VCE TO THE C
OSCILLOSCOPE
G
VCC=200V VGE E +
1~3mA
IG
IC
VGE , Gate -Emitter Voltage (V)
I CP =40A V CE =200V 5
4
3
2
1
0 0
40
80
120
160
Q G , Gate Charge (nC)
Fig 11. Gate Charge Test Circuit
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
Fig 12. Gate Charge Waveform
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Advanced Power Electronics Corp.
AP26G40GEO-HF-3
Package Dimensions: TSSOP-8 D
8
7
Millimeters
6
5
E1
O 1
2
3
E
4
SYMBOLS
MIN
A
---
---
1.20
A1
0.05
---
0.15
B
0.19
---
0.30
C
---
0.127
----
D
2.90
3.00
3.10
E
6.20
6.40
6.60
E1
4.30
4.40
4.50
L
0.45
0.60
0.75
NOM MAX
0.65 REF.
e θ
0°
----
8°
e B
c
L
A
θ
A1 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions.
Marking Information: Product: AP26G40
26G40GEO YWWSSS
GEO = RoHS-compliant TSSOP-8 with Gate ESD protection YWWSSS = Date/lot code YWW = Year and work week of manufacture. SSS = Lot code information.
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
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