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Datasheet For Ap26g40geo-hf-3tr By Advanced Power Electronics Corp. Usa

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Advanced Power Electronics Corp. AP26G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low 3.0V Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package E E E G C G E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGEP Peak Gate-Emitter Voltage ±6 V Pulsed Collector Current 150 A Maximum Power Dissipation 1 W Storage Temperature Range -55 to 150 o C -55 to 150 o C ICP PD at TA=25°C TSTG TJ 1 Junction Temperature Range Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol Parameter Test Conditions VGE= ±6V, V CE=0V Min. - Typ. - Max. ±10 Units - - 10 uA - 4.5 9 V 0.3 - 1.2 V IGES Gate-Emitter Leakage Current ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V VCE(sat) Collector-Emitter Saturation Voltage VGE=3V, ICP=150A (Pulsed) VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA Qg Total Gate Charge IC=40A - 86 138 nC Qge Gate-Emitter Charge VCE=200V - 5.4 - nC Qgc Gate-Collector Charge VGE=4V - 29 - nC td(on) Turn-on Delay Time VCC=320V - 900 - ns tr Rise Time IC=150A - 1.6 - µs td(off) Turn-off Delay Time RG=10Ω - 170 - ns tf Fall Time VGE=3V - 2.3 - µs Cies Input Capacitance VGE=0V - 5170 8270 pF Coes Output Capacitance VCE=30V - 45 - pF Reverse Transfer Capacitance f=1.0MHz - 27 - Cres RthJA 1 Thermal Resistance Junction-Ambient - - 125 uA pF o C/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board Ordering Information AP26G40GEO-HF-3TR : in RoHS-compliant halogen-free TSSOP-8 shipped on tape and reel (3000 pcs/reel) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 200908141-3 1/4 Advanced Power Electronics Corp. AP26G40GEO-HF-3 Typical Electrical Characteristics 120 150 5.0V 4.0V 3.0V V G =2.5V IC , Collector Current (A) 120 5.0V 4.0V 3.0V V G = 2.5V T A = 150 o C 100 IC , Collector Current (A) T A =25 o C 90 60 80 60 40 30 20 0 0 0 2 4 6 8 0 2 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics 6 8 Fig 2. Typical Output Characteristics 160 6 V GE = 3 .0V V GE =3.0V VCE(sat) ,Saturation Voltage(V) T A =25 o C IC , Collector Current(A) 4 V CE , Collector-Emitter Voltage (V) 120 o T A =150 C 80 40 5 4 I C =100A 3 I C =60A 2 I C =20A 0 1 0 1 2 3 4 5 6 0 20 40 60 Fig 3. Typical Saturation Voltage Characteristics 100 120 140 160 Fig 4. Collector- Emitter Saturation Voltage vs. Junction Temperature 10 10 T A =25 o C T A =150 o C VCE ,Collector-Emitter Voltage(V) VCE ,Collector-Emitter Voltage(V) 80 T C , Case Temperature ( o C) V CE , Collector-Emitter Voltage (V) 8 6 4 I C = 120A I C =80A I C =40A 2 0 8 6 4 I C =80A I C =60A I C =40A 2 0 0 1 2 3 4 V GE , Gate-Emitter Voltage(V) Fig 5. Collector Current vs. Gate-Emitter Voltage ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 5 6 0 1 2 3 4 5 6 V GE , Gate-Emitter Voltage(V) Fig 6. Collector Current vs. Gate-Emitter Voltage 2/4 Advanced Power Electronics Corp. AP26G40GEO-HF-3 Typical Electrical Characteristics (cont.) f=1.0MHz 10000 160 T C =70 o C ICP , Peak Collector Current (A) C ies C (pF) 1000 100 C oes C res 10 120 80 40 0 1 5 9 13 17 21 25 29 33 37 V GE , Gate-to-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V)) Fig 7. Typical Capacitance Characteristics Fig 8. Maximum Pulse Collector Current VCE RC 90% TO THE OSCILLOSCOPE C VCE G RG VCC=320 V 10% E VGE + - 4V VGE td(off) tf td(on) tr Fig 9. Switching Time Test Circuit Fig 10. Switching Time Waveform 6 VCE TO THE C OSCILLOSCOPE G VCC=200V VGE E + 1~3mA IG IC VGE , Gate -Emitter Voltage (V) I CP =40A V CE =200V 5 4 3 2 1 0 0 40 80 120 160 Q G , Gate Charge (nC) Fig 11. Gate Charge Test Circuit ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com Fig 12. Gate Charge Waveform 3/4 Advanced Power Electronics Corp. AP26G40GEO-HF-3 Package Dimensions: TSSOP-8 D 8 7 Millimeters 6 5 E1 O 1 2 3 E 4 SYMBOLS MIN A --- --- 1.20 A1 0.05 --- 0.15 B 0.19 --- 0.30 C --- 0.127 ---- D 2.90 3.00 3.10 E 6.20 6.40 6.60 E1 4.30 4.40 4.50 L 0.45 0.60 0.75 NOM MAX 0.65 REF. e θ 0° ---- 8° e B c L A θ A1 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. Marking Information: Product: AP26G40 26G40GEO YWWSSS GEO = RoHS-compliant TSSOP-8 with Gate ESD protection YWWSSS = Date/lot code YWW = Year and work week of manufacture. SSS = Lot code information. ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 4/4