Datasheet For Ap4034gm-hf-3tr By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. AP4034GM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low Gate-Charge Fast Switching Performance G RoHS-compliant, halogen-free S BV DSS 30V RDS(ON) 9mΩ ID 13A Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP4034GM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. D D D G SO-8 (M) S S S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID at TA=25°C ID at TA= 70°C Rating Units 30 V ±20 V Continuous Drain Current 3 13 A Continuous Drain Current 3 10.4 A 50 A 1 IDM Pulsed Drain Current PD at TA=25°C Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP4034GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 201110241-3 1/5 Advanced Power Electronics Corp. AP4034GM-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A - 7.2 9 mΩ VGS=4.5V, ID=8A - 10.3 14 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.4 3 V gfs Forward Transconductance VDS=10V, ID=12A - 24 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA Qg Total Gate Charge ID=12A - 15 24 nC Qgs Gate-Source Charge VDS=15V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 7 - nC td(on) Turn-on Delay Time VDS=15V - 10 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 27 - ns tf Fall Time VGS=10V - 7 - ns Ciss Input Capacitance VGS=0V - 1700 2720 pF Coss Output Capacitance VDS=15V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Rg Gate Resistance f=1.0MHz - 1.1 2.2 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=2.1A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=12A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width <300µs , duty cycle <2% 3.Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W on minimum copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. AP4034GM-HF-3 Typical Electrical Characteristics 60 80 60 10 V 7.0 V 6.0 V 5.0 V V G =4.0V 50 ID , Drain Current (A) ID , Drain Current (A) T A = 150 o C 10 V 7.0 V 6.0 V 5.0 V V G =4.0V o T A = 25 C 40 40 30 20 20 10 0 0 0 1 2 3 0 4 1 Fig 1. Typical Output Characteristics 3 4 5 Fig 2. Typical Output Characteristics 12 1.9 ID=8A T A =25°C I D = 12A V G =10V Normalized RDS(ON) 11 10 RDS(ON) (mΩ ) 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 9 8 1.4 0.9 7 0.4 6 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 2.0 12 I D =250uA 10 Normalized VGS(th) (V) 1.6 IS(A) 8 T j =150 o C T j =25 o C 6 4 1.2 0.8 0.4 2 0.0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 3/5 Advanced Power Electronics Corp. AP4034GM-HF-3 Typical Electrical Characteristics (cont.) 8 2000 6 C iss 1600 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 2400 I D = 12 A V DS = 15 V 4 1200 800 2 400 C oss C rss 0 0 0 8 16 24 32 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 100us 10 ID (A) Normalized Thermal Response (Rthja) Operation in this area limited by RDS(ON) 1ms 10ms 100ms 1 1s 0.1 o DC T A =25 C Single Pulse 0.01 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125°C/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 60 16 V DS =5V ID , Drain Current (A) ID , Drain Current (A) 50 40 30 20 T j =150 o C 12 8 4 o T j =25 C 10 T j = -40 o C 0 0 0 1 2 3 4 5 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 6 25 50 75 100 125 150 o T A , Ambient Temperature ( C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 4/5 Advanced Power Electronics Corp. AP4034GM-HF-3 Package Dimensions: SO-8 D 8 7 Millimeters 6 5 2 3 MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E1 3.80 3.90 4.00 E 5.80 6.15 6.50 L 0.38 0.71 1.27 0 4.00 8.00 E E1 1 SYMBOLS 4 e e B 1.27 TYP A A1 DETAIL A L θ 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. c DETAIL A Marking Information: Product: AP4034 4034GM YWWSSS Package: GM = RoHS-compliant halogen-free SO-8 Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 5/5