Transcript
AP4230GM-HF Halogen-Free Product
Advanced Power Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower Gate Charge
BVDSS
Simple Drive Requirement
RDS(ON)
Fast Switching Characteristic
ID
30V 25m 7A
Halogen Free & RoHS Compliant Product D2 D2 D1
Description
D1
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G2 S2 G1
SO-8
S1
D2
D1
G2
G1 S1
S2
Absolute Maximum Ratings Parameter
Symbol VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=70
Rating
Units
30
V
+20
V
3
7
A
3
5.5
A
Continuous Drain Current Continuous Drain Current 1
IDM
Pulsed Drain Current
30
A
PD@TA=25
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-a
Parameter
Value
Maximum Thermal Resistance, Junction-ambient 3
62.5
Data and specifications subject to change without notice
Unit /W
1 200909171
AP4230GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=7A
-
-
25
m
VGS=4.5V, ID=5A
-
-
45
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
11
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=7A
-
4.2
6.7
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
1.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.5
-
nC
VDS=15V
-
5
-
ns
-
10
-
ns
-
13.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=15
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
250
400
pF
Coss
Output Capacitance
VDS=25V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
-
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=7A, VGS=0V,
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP4230GM-HF 40
40
ID , Drain Current (A)
ID , Drain Current (A)
30
20
V G = 4.0V
30
5.0V
20
V G = 4.0 V
10
10
0
0 0
1
2
3
4
5
0
6
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
2.0
ID=7A V G =10V Normalized RDS(ON)
ID=5A T A =25
)
42
RDS(ON) (m
10V 7.0V 6.0V
T A = 150 o C
10V 7.0V 6.0V 5.0V
o
T A = 25 C
34
26
1.6
1.2
0.8
18
0.4 2
4
6
8
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
8
1.4
Normalized VGS(th) (V)
1.2
IS(A)
6
4
T j =150 o C
T j =25 o C
1.0
0.8
2 0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP4230GM-HF f=1.0MHz
400
8
ID=7A
300
V DS =15V
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss 200
4
100
C oss C rss
2
0
0 0
2
4
6
8
1
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Operation in this area limited by RDS(ON)
10
100us 1ms 1
10ms 100ms 0.1
1s T A =25 o C Single Pulse
DC
Normalized Thermal Response (Rthja)
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
PDM t
0.05
T Duty factor = t/T Peak Tj = PDM x Rthja + T a
0.02
Rthja = 135
/W
0.01
Single Pulse
0.01
0.01 0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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