Transcript
AP4412GM Pb Free Plating Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low Gate Charge
BVDSS
D D
Simple Drive Requirement
25V
RDS(ON)
D D
33m
ID
Fast Switching
7A
G
RoHS Compliant S
SO-8
S
S
Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G S
Absolute Maximum Ratings Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=70
Rating
Units
25
V
±20
V
Continuous Drain Current
3
7
A
Continuous Drain Current
3
5.8
A
30
A
1
IDM
Pulsed Drain Current
PD@TA=25
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-a
Value
Parameter Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
50
Unit /W
200415051-1/6
AP4412GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS VDSS/ Tj
RDS(ON)
Parameter Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
Typ.
25
-
-
-
0.03
-
V/
VGS=10V, ID=7A
-
-
33
m
VGS=4.5V, ID=3.5A
-
-
60
m
VDS=VGS, ID=250uA
1
-
3
V
VGS=0V, ID=250uA 2
, ID=1mA
Max. Units V
VDS=10V, ID=7A
-
12
-
S
o
VDS=25V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (T j=70 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=7A
-
7
-
nC
Drain-Source Leakage Current (T j=25 C)
IGSS
Min.
Breakdown Voltage Temperature Coefficient Reference to 25
VGS(th) IDSS
Test Conditions
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
5
-
nC
VDS=16V
-
7
-
ns
-
22
-
ns
-
14.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=7A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=2.3
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
218
-
pF
Coss
Output Capacitance
VDS=25V
-
155
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
63
-
pF
Min.
Typ.
VD=VG=0V , VS=1.2V
-
-
2.08
A
Tj=25
-
-
1.2
V
VGS=10V
Source-Drain Diode Symbol IS VSD
Parameter Continuous Source Current ( Body Diode ) 2
Forward On Voltage
Test Conditions , IS=2.3A, VGS=0V
Max. Units
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125
/W when mounted on Min. copper pad.
2/6
AP4412GM
30
25
o
T C =25 C 10V 8.0V 6.0V
20
20
5.0V ID , Drain Current (A)
ID , Drain Current (A)
25
10V 8.0V 6.0V
T C =150 o C
5.0V
15
10
V GS =4.0V
15
10
V GS =4.0V 5
5
0
0 0
1
2
3
4
5
0
6
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
60
I D =7A T C =25
55
I D =7A V GS =10V
1.6
Normalized R DS(ON)
50
RDS(ON) (m
)
45
40
35
1.4
1.2
1
30 0.8 25
20
0.6 3
4
5
6
7
8
9
10
11
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
3/6
AP4412GM
8
3
7
2
5
PD (W)
ID , Drain Current (A)
6
4
3 1
2
1
0
0
25
50
75
100
125
150
0
50
T c , Case Temperature ( o C)
100
150
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
10
Normalized Thermal Response (R thja)
Duty Factor = 0.5
1ms
ID (A)
10ms 1
100ms 1s 0.1
10s T C =25 o C Single Pulse
0.2
0.1
0.1
0.05
0.02 0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=125 oC/W
DC 0.001
0.01
0.0001 0.1
1
10
0.001
0.01
0.1
1
10
100
1000
100
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4/6
AP4412GM
f=1.0MHz
16
1000
I D =7A V DS =16V
VGS , Gate to Source Voltage (V)
14
12
Ciss 10
C (pF)
Coss 8
100
Crss
6
4
2
0
10 0
2
4
6
8
10
12
14
16
1
5
9
Fig 9. Gate Charge Characteristics
21
25
29
Fig 10. Typical Capacitance Characteristics
3
10
2
VGS(th) (V)
100
IS(A)
17
V DS (V)
Q G , Total Gate Charge (nC)
Tj=25 o C
Tj=150 o C
13
1
1
0
0.1 0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s. Junction Temperature
5/6
AP4412GM
VDS 90%
RD
VDS
D
0.64 x RATED VDS
G
RG
TO THE OSCILLOSCOPE
+
10% VGS
S 10 v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG VDS
5V 0.64 x RATED VDS
G S
QG
TO THE OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
I
D
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
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