Datasheet For Ap4426gm-hf-3tr By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. AP4426GM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low On-resistance 30V RDS(ON) Fast Switching Performance G RoHS-compliant, halogen-free S 6.5mΩ ID 16A Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D D D The AP4426GM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. G SO-8 S S S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID at TC=25°C ID at TC= 70°C Rating Units 30 V ±20 V Continuous Drain Current 3 16 A Continuous Drain Current 3 12.8 A 80 A 1 IDM Pulsed Drain Current PD at TC=25°C Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP4426GM-HF-3TR ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) 200510211-3 1/5 Advanced Power Electronics Corp. AP4426GM-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 30 - - V - 0.02 - V/°C VGS=10V, ID=16A - - 6.5 mΩ VGS=4.5V, ID=12A - - 10 mΩ 0.8 - 2.5 V BVDSS Drain-Source Breakdown Voltage ∆ BV DSS / ∆ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=VGS, ID=250uA VDS=10V, ID=16A - 30 - S o VDS=30V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=16A - 28 45 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=25V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 16 - nC VDS=15V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 44 - ns tf Fall Time RD=15Ω - 17 - ns Ciss Input Capacitance VGS=0V - 2000 3200 pF Coss Output Capacitance VDS=25V - 500 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 370 - pF Rg Gate Resistance f=1.0MHz - 1.1 1.7 Ω Min. Typ. IS=1.9A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=16A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 25 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300µs , duty cycle < 2% 3.Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W on minimum copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. AP4426GM-HF-3 Typical Electrical Characteristics 100 100 10V 7.0V 5.0V 4.5V T A = 25 C ID , Drain Current (A) 80 60 80 V G =3.0V 40 V G =3.0V 60 40 20 20 0 0 0 2 4 0 6 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.9 I D = 16 A V G =10V I D = 12 A T A =25°C 15 1.4 Normalized RDS(ON) RDS(ON) (Ω ) 10V 7.0V 5.0V 4.5V o T A = 150 C ID , Drain Current (A) o 10 0.9 0.4 5 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 12 2.0 9 Normalized VGS(th) (V) 1.5 o o T j =150 C T j =25 C IS(A) 6 3 1.0 0.5 0.0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 3/5 Advanced Power Electronics Corp. AP4426GM-HF-3 Typical Electrical Characteristics (cont.) f=1.0MHz 16 10000 12 V DS = 15 V V DS = 20 V V DS = 25 V C iss C (pF) VGS , Gate to Source Voltage (V) I D = 16 A 8 1000 C oss C rss 4 100 0 0 20 40 1 60 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 10 Normalized Thermal Response (Rthja) 100us 1ms ID (A) 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.01 0.001 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 VG V DS =5V ID , Drain Current (A) 80 T j =25 o C T j =150 o C QG 4.5V 60 QGS QGD 40 20 Charge Q 0 0 1 2 3 4 5 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com Fig 12. Gate Charge Waveform 4/5 Advanced Power Electronics Corp. AP4426GM-HF-3 Package Dimensions: SO-8 D 8 7 Millimeters 6 5 SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E1 3.80 3.90 4.00 E 5.80 6.15 6.50 L 0.38 0.71 1.27 0 4.00 8.00 E E1 1 2 3 4 e e B 1.27 TYP A A1 DETAIL A L θ 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. c DETAIL A Marking Information: SO-8 Product: AP4426 4426GM YWWSSS Package: GM = RoHS-compliant halogen-free SO-8 Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 5/5