Datasheet For Ap4500gm-hf-3tr By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. AP4500GM-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement D2 Low On-resistance N-CH D2 D1 Fast Switching Performance D1 G2 RoHS-compliant, halogen-free SO-8 S1 S2 G1 P-CH Description BV DSS 20V RDS(ON) 30mΩ ID BVDSS RDS(ON) ID 6A -20V 50mΩ -5A Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D2 D1 The AP4500GM-HF-3 is in a standard SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives. G2 G1 S2 S1 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID at TA=25°C ID at TA=70°C Units Rating N-channel P-channel 20 -20 V ±12 ±12 V Continuous Drain Current 3 6.0 -5.0 A Continuous Drain Current 3 4.8 -4.0 A 20 -20 A 1 IDM Pulsed Drain Current PD at TA=25°C Total Power Dissipation Linear Derating Factor 2.0 W 0.016 W/°C TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Parameter Symbol Rthj-a 3 Maximum Thermal Resistance, Junction-ambient Value Unit 62.5 °C/W Ordering Information AP4500GM-HF-3TR ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com RoHS-compliant, halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) 200709133-3 1/8 Advanced Power Electronics Corp. AP4500GM-HF-3 N-channel Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 20 - - VGS=4.5V, ID=6A - - 30 m VGS=2.5V, ID=5.2A - - 45 m 0.5 - 1.2 V VGS=0V, ID=250uA 2 Max. Units V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=6A - 6 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA V DS=20V, VGS=0V, Tj=70°C - - 25 uA VGS=±12V, VDS=0V - - ±100 nA ID=6A - 10 15 nC I GSS Gate-Source Leakage 2 Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain ("Miller") Charge VDS=16V VGS=4.5V - 1.1 4.1 - nC nC td(on) Turn-on Delay Time2 VDS=10V - 7 - ns tr Rise Time ID=1A - 10 - ns td(off) Turn-off Delay Time RG=3.3Ω, VGS=5V - 21 - ns tf Fall Time RD=10Ω - 5 - ns Ciss Input Capacitance VGS=0V - 570 910 pF Coss Output Capacitance VDS=20V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 135°C/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/8 Advanced Power Electronics Corp. AP4500GM-HF-3 P-channel Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -20 - - V VGS=-4.5V, ID=-2.2A - - 50 m VGS=-2.5V, ID=-1.8A - - 90 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1 V gfs Forward Transconductance VDS=-10V, ID=-2.2A - 2.2 - S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA V DS=-16V, VGS =0V, Tj=70°C - - -25 uA VGS=±12V, VDS=0V - - ±100 nA ID=-5A - 13 20 nC I GSS Gate-Source Leakage 2 Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain ("Miller") Charge VDS=-16V VGS=-4.5V - 1.5 4.5 - nC nC td(on) Turn-on Delay Time2 VDS=-10V - 8 - ns tr Rise Time ID=-1A - 17 - ns td(off) Turn-off Delay Time RG=3.3Ω, VGS=-5V - 24 - ns tf Fall Time RD=10Ω - 36 - ns Ciss Input Capacitance VGS=0V - 920 1500 pF Coss Output Capacitance VDS=-20V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Min. Typ. IS=-1.8A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-5A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 135°C/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/8 Advanced Power Electronics Corp. AP4500GM-HF-3 Typical N-channel Electrical Characteristics 20 20 T A =25 5.0 V 4.5 V 3.5 V 2.5 V V G = 2 .0V T A =150 16 ID , Drain Current (A) ID , Drain Current (A) 16 5.0V 4.5V 3.5V 2.5V 12 8 4 V G =2.0V 12 8 4 0 0 0 0 1 1 2 0 2 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 36 1.8 I D =6A V G =10V I D = 6A T A = 25 o C RDS(ON0 (m ) Normalized R DS(ON) 32 28 1.4 1.0 24 20 0.6 1 2 3 4 5 -50 100 150 Fig 4. Normalized On-Resistance vs. Junction Temperature 1.4 8 1.2 Normalized VGS(th) (V) 10 T j =25 o C T j =150 o C 50 T j , Junction Temperature ( C) Fig 3. On-Resistance vs. Gate Voltage IS(A) 6 0 o V GS , Gate-to-Source Voltage (V) 4 2 1.0 0.8 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 4/8 Advanced Power Electronics Corp. AP4500GM-HF-3 Typical N-channel Electrical Characteristics (cont.) f=1.0MHz 1000 C iss 10 8 ID=6A V DS = 24 V 6 C (pF) VGS , Gate to Source Voltage (V) 12 C oss C rss 100 4 2 10 0 0 3 6 9 12 15 18 21 24 1 27 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (R thja) 1 10 100us ID (A) 9 V DS , Drain-to-Source Voltage (V) 1ms 1 10ms 100ms 0.1 1s o T A =25 C Single Pulse DC 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + Ta 0.01 Rthja=135 oC/W Single Pulse 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveforms ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com Charge Q Fig 12. Gate Charge Waveform 5/8 Advanced Power Electronics Corp. AP4500GM-HF-3 Typical P-channel Electrical Characteristics 20 20 T A = 150 o C - 5.0 V - 4.5 V - 3.5 V - 2.5 V V G = - 1.5 V T A =25 o C 16 -ID , Drain Current (A) -ID , Drain Current (A) 16 -5.0 V - 4.5 V - 3.5 V - 2.5 V 12 8 4 12 V G = - 1.5 V 8 4 0 0 0 1 2 3 4 5 0 -V DS , Drain-to-Source Voltage (V) 1 2 3 4 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.4 60 I D = -1.8 A I D = -2.2 A V G = - 10V T A =25 o C 56 RDS(ON) (m ) Normalized R DS(ON) 1.2 52 48 1.0 0.8 44 0.6 40 1 2 3 4 -50 5 -V GS , Gate-to-Source Voltage (V) 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 8 1.2 Normalized -VGS(th) (V) 6 -IS(A) 0 4 T j =150 o C T j =25 o C 1.0 0.8 2 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 6/8 Advanced Power Electronics Corp. AP4500GM-HF-3 Typical P-channel Electrical Characteristics (cont.) 9 I D = -5A V DS = -16V 1000 C iss 6 C oss C rss 100 3 10 0 0.0 5.0 10.0 15.0 20.0 25.0 1 30.0 5 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thja) 100 10 -ID (A) f=1.0MHz 10000 C (pF) -VGS , Gate to Source Voltage (V) 12 100us 1ms 1 10ms 100ms 1s 0.1 T A =25 o C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + Ta 0.01 Rthja=135 oC/W Single Pulse 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveforms ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com Charge Q Fig 12. Gate Charge Waveform 7/8 Advanced Power Electronics Corp. AP4500GM-HF-3 Package Dimensions: SO-8 D 8 7 Millimeters 6 5 SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E1 3.80 3.90 4.00 E 5.80 6.15 6.50 L 0.38 0.71 1.27 0 4.00 8.00 E E1 1 2 3 4 e e B 1.27 TYP A A1 DETAIL A L Θ 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. c DETAIL A Marking Information: Product: AP4500 4500GM YWWSSS Package: GM = RoHS-compliant SO-8 Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 8/8