Datasheet For Ap4501gm-hf-3tr By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. AP4501GM-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement D2 Low On-resistance N-CH D2 D1 Fast Switching Performance D1 G2 RoHS-compliant, halogen-free SO-8 S1 S2 G1 P-CH Description BV DSS 30V RDS(ON) 28mΩ ID BVDSS RDS(ON) ID 7A -30V 50mΩ -5.3A Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D1 The AP4501GM-HF-3 is in a standard SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives. D2 G2 G1 S1 S2 Absolute Maximum Ratings Symbol Rating Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID at TA=25°C ID at TA=70°C Units N-channel P-channel 30 -30 V ±20 ±20 V Continuous Drain Current 3 7.0 -5.3 A Continuous Drain Current 3 5.8 -4.7 A 20 -20 A 1 IDM Pulsed Drain Current PD at TA=25°C Total Power Dissipation Linear Derating Factor 2.0 W 0.016 W/°C TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Parameter Symbol Rthj-a 3 Maximum Thermal Resistance, Junction-ambient Value Unit 62.5 °C/W Ordering Information AP4501GM-HF-3TR ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com RoHS-compliant, halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) 201009015-3 1/8 Advanced Power Electronics Corp. AP4501GM-HF-3 N-channel Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 30 - - VGS=10V, ID=7A - - 28 m VGS=4.5V, ID=5A - - 42 m VGS=0V, ID=250uA 2 Max. Units V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=6A - 15 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA V DS=24V, VGS=0V, Tj=70°C - - 25 uA VGS=±20V, VDS=0V - - ±100 nA ID=6A - 8 13.5 nC I GSS Gate-Source Leakage 2 Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain ("Miller") Charge VDS=24V VGS=4.5V - 2 4.5 - nC nC td(on) Turn-on Delay Time2 VDS=15V - 8 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω, VGS=10V - 19 - ns tf Fall Time RD=15Ω - 5 - ns Ciss Input Capacitance VGS=0V - 645 800 pF Coss Output Capacitance VDS=25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Min. Typ. IS=7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 135°C/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/8 Advanced Power Electronics Corp. AP4501GM-HF-3 P-channel Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -30 - - VGS=-10V, ID=-5.3A - - 50 m VGS=-4.5V, ID=-4.2A - - 90 m -1 - -3 V V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-10V, ID=-5A - 5 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA V DS=-24V, VGS =0V, Tj=70°C - - -25 uA VGS=±20V, VDS=0V - - ±100 nA ID=-5A - 8 13 nC I GSS Gate-Source Leakage 2 Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain ("Miller") Charge VDS=-15V VGS=-4.5V - 1.7 4.5 - nC nC td(on) Turn-on Delay Time2 VDS=-15V - 6.7 - ns tr Rise Time ID=-1A - 10 - ns td(off) Turn-off Delay Time RG=3.3Ω, VGS=-10V - 21 - ns tf Fall Time RD=15Ω - 10 - ns Ciss Input Capacitance VGS=0V - 595 950 pF Coss Output Capacitance VDS=-25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Min. Typ. IS=-2.6A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-5A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 135°C/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/8 Advanced Power Electronics Corp. AP4501GM-HF-3 Typical N-channel Electrical Characteristics 20 20 T A =25°C 16 ID , Drain Current (A) ID , Drain Current (A) 16 12 8 4 12 8 4 0 0 2 0 4 6 8 0 Fig 1. Typical Output Characteristics 6 8 10 Fig 2. Typical Output Characteristics 40 1.8 I D =7A V G =10V I D = 5A Normalized R DS(ON) T A = 25 o C RDS(ON0 (mΩ ) 4 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 30 20 1.4 1.0 10 0.6 2 4 6 8 10 -50 50 100 150 T j , Junction Temperature ( C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 1.4 8 1.2 Normalized VGS(th) (V) 10 T j =25 o C T j =150 o C 0 o V GS , Gate-to-Source Voltage (V) IS(A) 10V 8.0V 6.0V 5.0V V G =4.5V T A =150°C 10V 8.0V 6.0V 5.0V V G = 4.5V 6 4 2 1.0 0.8 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 4/8 Advanced Power Electronics Corp. AP4501GM-HF-3 Typical N-channel Electrical Characteristics (cont.) f=1.0MHz 1200 ID=6A V DS = 24 V 1000 8 800 C (pF) VGS , Gate to Source Voltage (V) 10 6 C iss 600 4 400 2 200 C oss C rss 0 0 0 3 6 9 12 15 1 18 5 9 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (R thja) 1 10 100us ID (A) 13 1ms 1 10ms 100ms 0.1 1s o T A =25 C Single Pulse DC 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + Ta 0.01 Rthja=135°C/W Single Pulse 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveforms ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com Charge Q Fig 12. Gate Charge Waveform 5/8 Advanced Power Electronics Corp. AP4501GM-HF-3 Typical P-channel Electrical Characteristics 40 40 30 20 V G = - 3 .0V 10 - 10V - 7.0V T A = 150 o C - 10V - 7.0V - 5.0V - 4.5V -ID , Drain Current (A) -ID , Drain Current (A) T A =25 o C - 5.0V 30 - 4.5V 20 V G = - 3 .0V 10 0 0 0 1 2 3 4 5 6 0 -V DS , Drain-to-Source Voltage (V) 2 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 70 I D = -5.3 A V G = - 10V I D = -4.2 A T A =25 o C 1.4 Normalized R DS(ON) RDS(ON) (mΩ ) 60 50 1.2 1.0 40 0.8 0.6 30 2 4 6 8 -50 10 50 100 150 o -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 1.2 Normalized -VGS(th) (V) 8 6 -IS(A) 0 4 T j =150 o C T j =25 o C 1.0 0.8 2 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 6/8 Advanced Power Electronics Corp. AP4501GM-HF-3 Typical P-channel Electrical Characteristics (cont.) f=1.0MHz 12 1000 C iss I D = -5.3A V DS = -15V 8 C (pF) -VGS , Gate to Source Voltage (V) 10 6 100 C oss C rss 4 2 10 0 0.0 4.0 8.0 12.0 16.0 5 1 20.0 9 Fig 7. Gate Charge Characteristics 17 25 21 29 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (R thja) 1 10 -ID (A) 13 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 100us 1ms 1 10ms 100ms 0.1 T A =25 o C Single Pulse 1s Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + Ta 0.01 Rthja=135 oC/W DC Single Pulse 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveforms ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com Charge Q Fig 12. Gate Charge Waveform 7/8 Advanced Power Electronics Corp. AP4501GM-HF-3 Package Dimensions: SO-8 D 8 7 Millimeters 6 5 SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E1 3.80 3.90 4.00 E 5.80 6.15 6.50 L 0.38 0.71 1.27 0 4.00 8.00 E E1 1 2 3 4 e e B 1.27 TYP A A1 DETAIL A L θ 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. c DETAIL A Marking Information: Product: AP4501 4501GM YWWSSS Package: GM = RoHS-compliant SO-8 Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 8/8