Datasheet For Ap4543geh-hf-3tr By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. AP4543GEH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS(ON) 24mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 8.7A -40V 40mΩ -7A Good Thermal Performance D1/D2 S1 G1 S2 P-CH G2 TO-252-4L Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D1 D2 G1 G2 The AP4543GEH-HF-3 is in a four-lead TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID at TA=25°C ID at TA=70°C Continuous Drain Current Units P-channel 40 -40 V ±20 ±20 V 3 8.7 -7.0 A 3 7.0 -5.6 A 30 -30 A Continuous Drain Current 1 IDM Pulsed Drain Current PD at TA=25°C Total Power Dissipation 3.13 Linear Derating Factor 0.167 W W/°C TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient Value Unit 6 °C/W 40 °C/W Ordering Information AP4543GEH-HF-3TR ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com RoHS-compliant TO-252-4L, shipped on tape and reel (3000 pcs/reel) 200909042-3 1/8 Advanced Power Electronics Corp. AP4543GEH-HF-3 N-channel Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 40 - - V VGS=10V, ID=7A - - 24 mΩ VGS=4.5V, ID=5A - - 36 mΩ VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=7A - 14 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±30 uA ID=7A - 8 13 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=32V - 1.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.4 - nC 2 td(on) Turn-on Delay Time VDS=20V - 6 - ns tr Rise Time ID=7A - 16 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 17 - ns tf Fall Time RD=2.86Ω - 4 - ns Ciss Input Capacitance VGS=0V - 600 960 pF Coss Output Capacitance VDS=25V - 110 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 2.1 - Ω Min. Typ. IS=2.6A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=7A, VGS=0V - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1. Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%. 3.Values are the same for both N-CH and P-CH MOSFETs, when mounted on 2oz FR4 board, t <10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/8 Advanced Power Electronics Corp. AP4543GEH-HF-3 P-channel Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -40 - - V VGS=-10V, ID=-5A - - 40 mΩ VGS=-4.5V, ID=-3A - - 65 mΩ VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5A - 10 - S IDSS Drain-Source Leakage Current VDS=-40V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±30 uA ID=-5A - 13 21 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-32V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8.5 - nC 2 td(on) Turn-on Delay Time VDS=-20V - 8 - ns tr Rise Time ID=-5A - 15 - ns td(off) Turn-off Delay Time RG=3.3Ω ,VGS=-10V - 26 - ns tf Fall Time RD=4Ω - 34 - ns Ciss Input Capacitance VGS=0V - 670 1070 pF Coss Output Capacitance VDS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF Rg Gate Resistance f=1.0MHz - 6 - Ω Min. Typ. IS=-2.6A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-5A, VGS=0V - 28 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 23 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%. 3.Values are the same for both N-CH and P-CH MOSFETs, when mounted on 2oz FR4 board, t <10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/8 Advanced Power Electronics Corp. AP4543GEH-HF-3 Typical N-channel Electrical Characteristics 40 40 o 30 10V 7.0V 6.0V 5.0V T A = 150 C ID , Drain Current (A) ID , Drain Current (A) o 10V 7.0V 6.0V 5.0V T A = 25 C V G = 4.0 V 20 30 V G = 4.0V 20 10 10 0 0 0 1 2 3 4 0 5 1 V DS , Drain-to-Source Voltage (V) 3 2 4 5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 32 1.8 ID=5A ID=7A V G =10V T A =25 o C Normalized RDS(ON) RDS(ON) (mΩ ) 28 24 1.4 1.0 20 0.6 16 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 1.6 10 T j =150 o C 6 Normalized VGS(th) (V) IS(A) 8 T j =25 o C 4 1.2 0.8 0.4 2 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 4/8 Advanced Power Electronics Corp. AP4543GEH-HF-3 Typical N-channel Electrical Characteristics (cont.) f=1.0MHz 1000 I D =7A V DS =32V 8 800 C (pF) VGS , Gate to Source Voltage (V) 10 6 600 C iss 4 400 2 200 C oss C rss 0 0 0 4 8 12 1 16 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Operation in this area limited by RDS(ON) 10 ID (A) 100us 1ms 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.01 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t Single Pulse 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + T A Rthja=75°C/W 0.001 0.1 0.01 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com Charge Q Fig 12. Gate Charge Waveform 5/8 Advanced Power Electronics Corp. AP4543GEH-HF-3 Typical P-channel Electrical Characteristics 40 40 -ID , Drain Current (A) -ID , Drain Current (A) 30 V G = - 4.0V 20 10 30 V G = - 4.0V 20 10 0 0 0 2 1 3 4 5 6 0 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.8 I D = -3 A T A =25 o C Normalized RDS(ON) 1.6 50 RDS(ON) (mΩ ) -10V -7.0V -6.0V -5.0V T A = 150 o C -10V -7.0V -6.0V -5.0V o T A = 25 C 40 I D = -5A V G = -10V 1.4 1.2 1.0 30 0.8 0.6 20 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS ,Gate-to-Source Voltage (V) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 10 1.6 1.4 Normalized -VGS(th) (V) -IS(A) 8 6 T j =150 o C T j =25 o C 4 1.2 1.0 0.8 2 0.6 0 0.4 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 6/8 Advanced Power Electronics Corp. AP4543GEH-HF-3 Typical P-channel Electrical Characteristics (cont.) f=1.0MHz 1200 1000 8 I D = -5 A V DS = -32 V 800 C (pF) -VGS , Gate to Source Voltage (V) 10 6 C iss 600 4 400 2 200 C oss C rss 0 0 0 4 8 12 16 20 1 24 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 -ID (A) 10 100us 1ms 1 10ms 100ms 1s 0.1 o T A =25 C Single Pulse DC 0.01 Normalized Thermal Response (Rthja) Duty factor=0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T A Rthja=75°C/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com Charge Q Fig 12. Gate Charge Waveform 7/8 Advanced Power Electronics Corp. AP4543GEH-HF-3 Package Dimensions: TO-252-4L A Millimeters SYMBOLS B MIN NOM MAX A 6.40 6.6 6.80 B 5.2 5.35 5.50 C 9.40 9.80 10.20 D 2.40 2.70 3.00 1.27 REF. P C E3 M R D S P S 0.50 0.65 0.80 E3 3.50 4.00 4.50 R 0.80 1.00 1.20 G 0.40 0.50 0.60 H 2.20 2.30 2.40 J 0.45 0.50 0.55 K 0.00 0.075 0.15 L 0.90 1.20 1.50 M 5.40 5.60 5.80 G 1. All dimensions are in millimeters. H 2. Dimensions do not include mold protrusions. K J L Marking Information: Product: AP4543 Package: GEH = RoHS-compliant halogen-free TO-252-4L 4543GEH LOGO YWWSSS Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 8/8