Transcript
AP4835GM RoHS-compliant Product
Advanced Power Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D D
Low On-resistance
D D
Fast Switching SO-8
S
S
S
-30V
RDS(ON)
20m
ID
-9.2A
G
Description
D
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G S
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Parameter
Symbol VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=70
Rating
Units
- 30
V
+25
V
Continuous Drain Current
3
-9.2
A
Continuous Drain Current
3
-7.4
A
-50
A
1
IDM
Pulsed Drain Current
PD@TA=25
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 3
50
Unit /W
1 200811045
AP4835GM o
Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-30
-
-
VGS=-10V, ID=-9A
-
-
20
m
VGS=-4.5V, ID=-6A
-
-
35
m
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
Max. Units V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+25V
-
-
+100
nA
ID=-7A
-
15
24
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
2.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-1A
-
6.6
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-
44
-
ns
tf
Fall Time
RD=15
-
34
-
ns
Ciss
Input Capacitance
VGS=0V
-
1175 1870
pF
Coss
Output Capacitance
VDS=-25V
-
195
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
190
Min.
Typ.
IS=-2.1A, VGS=0V
-
-
-1.2
V
VGS=-10V
-
pF
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
2 2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-7A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
18
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 125
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP4835GM 50
50
-ID , Drain Current (A)
40
40
-ID , Drain Current (A)
T A =25 C
-10V -7.0V -5.0V -4.5V
T A =150 o C
-10V -7.0V -5.0V -4.5V
o
30
V G =-3.0V 20
10
30
V G =-3.0V 20
10
0
0 0
1
2
3
4
0
2
4
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.7
30
I D =-6A
I D =-9A V G =-10V
T A =25 o C Normalized RDS(ON)
RDS(ON) (m
)
26
22
18
1.3
0.9
14
0.5
10
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
10
1.6
1.4
6
o
o
T j =150 C
-IS(A)
Normalized -VGS(th) (V)
8
T j =25 C
4
1.2
1.0
0.8
2 0.6
0.4
0 0.1
0.3
0.5
0.7
0.9
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.1
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP4835GM f=1.0MHz 10000
I D = -7A V DS = -15V 12
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
C iss
1000
4
C oss C rss 100
0 0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100.00
10.00
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
100us 1ms 1.00
10ms
0.10
100ms 1s
o
T A =25 C Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t T
0.02
Duty factor = t/T Peak Tj = PDM x Rthja + T a
0.01
Rthja = 125
Single Pulse
0.01
/W
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
VG
-ID , Drain Current (A)
V DS =-5V T j =25 o C
30
T j =150 o C
QG -4.5V QGS
20
QGD
10
Charge
Q
0
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8 D
Millimeters
8
7
6
5 E1
1 2
3
4
e B
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E
5.80
6.15
6.50
E1
3.80
3.90
4.00
e
1.27 TYP
G
0.254 TYP
L
0.38 0.00
0.90 4.00
8.00
A A1
1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement
4835GM YWWSSS
Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
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