Transcript
AP50T10GH/J-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D
100V
RDS(ON)
Lower Gate Charge Fast Switching Characteristic
ID
G
RoHS Compliant & Halogen-Free
30m 37A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP50T10GJ) is available for low-profile applications.
G
D
S
TO-252(H)
D S
TO-251(J)
Absolute Maximum Ratings Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, V GS @ 10V
37
A
ID@TC=100
Continuous Drain Current, V GS @ 10V
23
A
120
A
89.2
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation 3
PD@TA=25
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c
Value
Parameter Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Units
1.4
/W
62.5
/W
110
/W 1 201003293
AP50T10GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=24A
-
-
30
m
VGS=5V, ID=16A
-
-
70
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=24A
-
30
-
S
V
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=24A
-
42
67
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
19
-
nC
2
td(on)
Turn-on Delay Time
VDS=50V
-
11
-
ns
tr
Rise Time
ID=24A
-
42
-
ns
td(off)
Turn-off Delay Time
RG=1
-
26
-
ns
tf
Fall Time
VGS=10V
-
8.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1840 2940
pF
Coss
Output Capacitance
VDS=25V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
-
Min.
Typ.
IS=24A, VGS=0V
-
-
1.3
V
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
2 2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
80
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP50T10GH/J-HF 100
80
10V 7.0V 6.0V
ID , Drain Current (A)
80
60
5.0V 40
60
5.0V 40
V G = 4.0V 20
V G = 4.0V
20
0
0 0
4
8
12
16
0
4
V DS , Drain-to-Source Voltage (V)
8
12
16
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.4
I D =16A
I D =24A V G =10V
T C =25 o C 2.0
)
Normalized RDS(ON)
60
RDS(ON) (m
10V 7.0V 6.0V
T C = 150 o C ID , Drain Current (A)
T C = 25 o C
50
40
1.6
1.2
0.8
30
0.4
20 2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
20
2
I D =250uA 1.6
Normalized VGS(th) (V)
IS(A)
16
12
T j =150 o C
T j =25 o C
8
4
1.2
0.8
0.4
0
0 0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP50T10GH/J-HF f=1.0MHz 12
3000
I D = 24 A V DS = 50 V V DS = 60 V V DS = 80 V
8
2000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4
1000
2
0
C oss C rss
0 0
10
20
30
40
50
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
100
ID (A)
Operation in this area limited by RDS(ON)
100us
10
1ms 10ms 100ms DC
1
o
T c =25 C Single Pulse
Duty factor=0.5
0.2
0.1
0.1 0.05
PDM
t 0.02
T
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1 0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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