Transcript
AP55T06GI-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D
RDS(ON)
Lower On-resistance RoHS Compliant & Halogen-Free
ID
G
60V 18m 29A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
Absolute Maximum Ratings Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, V GS@10V
29
A
ID@TC=100
Continuous Drain Current, V GS@10V
18
A
120
A
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation
31.3
W
PD@TA=25
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
65
/W
Data and specifications subject to change without notice
1 201202151
AP55T06GI-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=18A
-
-
18
m
VGS=4.5V, ID=12A
-
-
30
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=18A
-
24
-
S
V
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=18A
-
16
25.6
nC
Qgs
Gate-Source Charge
VDS=48V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10.5
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
9
-
ns
tr
Rise Time
ID=18A
-
25
-
ns
td(off)
Turn-off Delay Time
RG=1
-
22
-
ns
tf
Fall Time
VGS=10V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1200 1920
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
3.4
Min.
Typ.
IS=18A, VGS=0V
-
-
1.3
V
Source-Drain Diode Symbol
Parameter 2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
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AP55T06GI-HF 120
100
10V 7.0V 6.0V
ID , Drain Current (A)
100
80
5.0V 60
V GS =4.0V
40
80
10V 7.0V 6.0V
60
5.0V
40
V GS =4.0V
T C = 150 o C ID , Drain Current (A)
T C = 25 o C
20 20
0
0 0
4
8
12
0
16
4
8
12
16
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
28
3.0
I D =12A T C =25 o C
I D =18A V G =10V
2.6
RDS(ON) (m
)
Normalized RDS(ON)
24
20
2.2
1.8
1.4
1.0 16
0.6
0.2
12 2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6
20
I D =250uA 16
12
T j =150 o C
Normalized VGS(th)
IS(A)
1.2
T j =25 o C
8
0.8
0.4 4
0.0
0 0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP55T06GI-HF f=1.0MHz
1600
I D =18A V DS =80V 8 1200
C iss 6
C (pF)
VGS , Gate to Source Voltage (V)
10
800
4
400 2
C oss C rss 0
0 0
10
20
30
1
40
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
ID (A)
Operation in this area limited by RDS(ON)
100us
10
1ms 10ms 100ms 1s DC
1
o
T C =25 C Single Pulse 0.1
0.2
0.1
0.1
0.05
0.02
0.01
PDM 0.01
Single Pulse
t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C
0.001
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
32
ID , Drain Current (A)
ID , Drain Current (A)
V DS =5V
24
16
60
40
T j =150 o C 20
8
T j =25 o C T j = -40 o C 0
0 25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain Current v.s. Case Temperature
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
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