Transcript
AP60T03AH/J
Advanced Power Electronics Corp. ! Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
! Low Gate Charge ! Fast Switching
BVDSS
30V
RDS(ON)
12m"
ID
G
45A
S
Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
GD
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03AJ) are available for low-profile applications.
G
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25#
Continuous Drain Current, VGS @ 10V
45
A
ID@TC=100#
Continuous Drain Current, VGS @ 10V
32
A
120
A
1
IDM
Pulsed Drain Current
PD@TC=25#
Total Power Dissipation
44
W
Linear Derating Factor
0.352
W/#
TSTG
Storage Temperature Range
-55 to 175
#
TJ
Operating Junction Temperature Range
-55 to 175
#
Thermal Data Value
Units
Rthj-c
Symbol
Thermal Resistance Junction-case
Max.
3.4
#/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
#/W
Parameter
Data and specifications subject to change without notice
200909033
AP60T03AH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.03
-
V/#
VGS=10V, ID=20A
-
-
12
m"
VGS=4.5V, ID=15A
-
-
25
m"
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=10A
-
25
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=175 C)
VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=20A
-
11.6
-
nC
BVDSS
Drain-Source Breakdown Voltage
$BVDSS/$Tj
Breakdown Voltage Temperature Coefficient Reference to 25#, ID=1mA
RDS(ON)
VGS(th) gfs
Static Drain-Source On-Resistance
Gate Threshold Voltage Forward Transconductance
2 o
IDSS
Drain-Source Leakage Current (T j=25 C) o
IGSS
2
VGS=0V, ID=250uA 2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
3.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=15V
-
8.8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
57.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3",VGS=10V
-
18.5
-
ns
tf
Fall Time
RD=0.75"
-
6.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
1135
-
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
IS=20A, VGS=0V,
-
23.3
-
ns
dI/dt=100A/µs
-
16
-
nC
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
Test Conditions
Max. Units
AP60T03AH/J 90
125
ID , Drain Current (A)
ID , Drain Current (A)
100
6.0V 75
5.0V 50
6.0V
60
5.0V
30
V G =4.0V
V G =4.0V
25
0
0 0.0
1.0
2.0
3.0
4.0
0.0
V DS , Drain-to-Source Voltage (V)
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2
I D =20A V G =10V
I D =15A T C =25 # 60
1.6
Normalized R DS(ON)
RDS(ON) (m" )
10V 8.0V
T C =175 o C
10V 8.0V
o
T C =25 C
40
20
1.2
0.8
0
0.4 2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
25
100
175
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
100
2.8
2.3
10 1.8
VGS(th) (V)
Tj=25 o C
IS(A)
Tj=175 o C
1.3
1
0.8
0.1
0.3 0
0.5
1
V SD (V) , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
25
100
175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP60T03AH/J f=1.0MHz 10000
12
V DS =16V V DS =20V V DS =24V
9
Ciss 1000
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
6
Coss Crss 100
3
0
10
0
6
12
18
24
1
8
15
22
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
ID (A)
100
100us 1ms 10
10ms 100ms DC
T C =25 o C Single Pulse 1
Normalized Thermal Response (Rthjc)
1000
Duty Factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t 0.01
T
Single Pulse
Duty Factor = t/T Peak Tj = PDM x Rthjc + TC
0.01 0.1
1
10
100
0.00001
0.0001
0.001
Fig 9. Maximum Safe Operating Area
0.01
0.1
Fig 10. Effective Transient Thermal Impedance
RD VDS
D RG +
VDS
0.8 x RATED VDS
G S
S 10V
VGS
-
TO THE OSCILLOSCOPE
D
TO THE OSCILLOSCOPE 0.5 x RATED VDS
G
VGS
+ 1~ 3 mA IG
Fig 11. Switching Time Circuit
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
2E+08
ID
Fig 12. Gate Charge Circuit
