Datasheet For Ap75t10gi-hf-3tb By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. AP75T10GI-HF-3 N-channel Enhancement-mode Power MOSFET D Simple Drive Requirement Low On-resistance Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 100V RDS(ON) 12mΩ ID 42A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP75T10GI-HF-3 is in the TO-220CFM package, which is widely used for commercial and industrial applications, where a low PCB footprint and/or isolated tab mounting is required. G D TO-220CFM (I) S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID at TC=25°C Continuous Drain Current 42 A ID at TC=100°C Continuous Drain Current 26 A 160 A 44.6 W 1 IDM Pulsed Drain Current PD at TC=25°C Total Power Dissipation TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Parameter Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.8 °C/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 °C/W Ordering Information AP75T10GI-HF-3TR ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com RoHS-compliant, halogen-free TO-220CFM, shipped in tubes. 201002121-3 1/5 Advanced Power Electronics Corp. AP75T10GI-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 100 - - V VGS=10V, ID=24A - - 12 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=24A - 80 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= ±20V, VDS=0V - - ±100 nA ID=24A - 125 200 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=80V - 20 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 40 - nC 2 td(on) Turn-on Delay Time VDS=50V - 17 - ns tr Rise Time ID=24A - 31 - ns td(off) Turn-off Delay Time RG=0.67Ω - 50 - ns tf Fall Time VGS=10V - 11.5 - ns Ciss Input Capacitance VGS=0V - 6600 10560 pF Coss Output Capacitance VDS=25V - 550 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 300 - pF Min. Typ. IS=24A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V - 60 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 130 - nC Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. AP75T10GI-HF-3 Typical Electrical Characteristics 240 120 10V 7.0V 5.0V 4.5V ID , Drain Current (A) 200 100 160 V GS =3.0V 120 10V 7.0V 5.0V 4.5V V GS =3.0V T C = 150 o C ID , Drain Current (A) T C = 25 o C 80 40 80 60 40 20 0 0 0 2 4 6 8 10 0 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 13 2.2 I D =24A V G =10V I D =24A o T C =25 C 1.8 Normalized RDS(ON) RDS(ON) (mΩ ) 12 11 1.4 1.0 10 0.6 0.2 9 2 4 6 8 -50 10 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 1.6 50 30 T j =150 o C Normalized VGS(th) (V) IS(A) 40 T j =25 o C 20 1.2 0.8 0.4 10 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 3/5 Advanced Power Electronics Corp. AP75T10GI-HF-3 Typical Electrical Characteristics (cont.) 12 f=1.0MHz 8000 V DS =80V 10 C iss 6000 8 C (pF) VGS , Gate to Source Voltage (V) I D = 24 A 6 4000 4 2000 2 C oxx C rss 0 0 0 40 80 120 1 160 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 ID (A) Operation in this area limited by RDS(ON) 100us 1ms 10 10ms 100ms 1 1s DC T c =25 o C Single Pulse 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0.1 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveforms ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com Charge Q Fig 12. Gate Charge Waveform 4/5 Advanced Power Electronics Corp. AP75T10GI-HF-3 Package Dimensions: TO-220CFM E A Millimeters SYMBOLS c2 φ L4 MIN NOM MAX A 4.30 4.70 4.90 A1 2.30 2.65 3.00 b b1 c c2 0.50 0.70 0.90 0.95 1.20 1.50 0.45 0.65 0.80 2.30 2.60 2.90 E 9.70 10.00 10.40 L 12.00 --- 15.00 L3 2.91 3.41 3.91 L4 14.70 15.40 16.10 φ e ---- 3.20 ---- ---- 2.54 ---- L3 A1 b1 1. All Dimensions are in millimeters. 2. Dimensions do not include mold protrusions. L b c e Marking Information Product: AP75T10 75T10GI YWWSSS ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com Package code GI = RoHS-compliant halogen-free TO-220CFM Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence 5/5