Datasheet For Ap80t10gp-hf-3tb By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. AP80T10GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance 100V RDS(ON) Fast Switching Performance G RoHS-compliant, halogen-free BV DSS ID 9.5mΩ 85A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP80T10GP-HF-3 is in the TO-220 through-hole package which is used in commercial appplications where a low PCB footprint or an attached heatsink is req uired. This device is well suited for low voltage applications such as DC/DC converters. G D TO-220 (P) S Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID at TC=25°C Continuous Drain Current, (Silicon Limited) 85 A ID at TC=25°C Continuous Drain Current 80 A ID at TC=100°C Continuous Drain Current 60 A 300 A 166 W (Package Limited) 1 IDM Pulsed Drain Current PD at TC=25°C Total Power Dissipation TSTG Storage Temperature Range -55 to 175 °C TJ Operating Junction Temperature Range -55 to 175 °C Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.9 °C/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 °C/W Ordering Information AP80T10GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 200912071-3 1/5 Advanced Power Electronics Corp. AP80T10GP-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 100 - - V VGS=10V, ID=40A - - 9.5 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 75 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= ±20V, VDS=0V - - ±100 nA ID=40A - 115 180 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=80V - 30 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 48 - nC 2 td(on) Turn-on Delay Time VDS=50V - 21 - ns tr Rise Time ID=30A - 58 - ns td(off) Turn-off Delay Time RG=1Ω ,VGS=10V - 41 - ns tf Fall Time RD=1.66Ω - 15 - ns Ciss Input Capacitance VGS=0V - 6000 9600 pF Coss Output Capacitance VDS=25V - 550 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 300 - pF Min. Typ. IS=40A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V - 75 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 230 - nC 1. Pulse width limited by maximum junction temperature. 2. Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. AP80T10GP-HF-3 Typical Electrical Characteristics 250 160 T C = 25 o C ID , Drain Current (A) ID , Drain Current (A) 200 10V 9.0V 8.0V 7.0V V G = 6.0V T C = 1 75 o C 10V 9.0V 8.0V 7.0V 150 V G = 6.0V 100 120 80 40 50 0 0 0 4 8 12 16 20 0 2 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6 8 10 Fig 2. Typical Output Characteristics 2.8 1.2 I D =40A V G =10V 2.4 1.1 Normalized RDS(ON) Normalized BVDSS (V) 4 V DS , Drain-to-Source Voltage (V) 1 2.0 1.6 1.2 0.9 0.8 0.4 0.8 -50 0 50 100 150 -50 200 0 o 50 100 150 200 T j , Junction Temperature ( o C) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS vs. Junction Temperature Fig 4. Normalized On-Resistance vs. Junction Temperature 1.4 40 Normalized VGS(th) (V) 1.2 IS(A) 30 20 T j =175 o C T j =25 o C 1 0.8 0.6 10 0.4 0 0.2 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.4 -50 0 50 100 150 200 o T j ,Junction Temperature ( C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 3/5 Advanced Power Electronics Corp. AP80T10GP-HF-3 Typical Electrical Characteristics (cont.) f=1.0MHz 12 10000 I D = 40 A 8000 V DS = 50 V V DS = 60 V V DS = 80 V 8 6000 C (pF) VGS , Gate to Source Voltage (V) 10 6 C iss 4000 4 2000 2 0 C oss C rss 0 0 40 80 120 160 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 1000 Operation in this area limited by RDS(ON) ID (A) 100 100us 1ms 10 10ms T c =25 o C Single Pulse 100ms DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveforms ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com Charge Q Fig 12. Gate Charge Waveform 4/5 Advanced Power Electronics Corp. AP80T10GP-HF-3 Package Dimensions: TO-220 E A E1 SYMBOLS φ Millimeters MIN L1 L5 c1 D1 D L4 4.40 4.60 4.80 b D c E 0.76 0.88 1.00 8.60 8.80 9.00 0.36 0.43 0.50 9.80 10.10 10.40 L4 14.70 15.00 15.30 L5 6.20 6.40 6.60 5.10 REF. c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 L 13.25 13.75 14.25 e L b c MAX A D1 b1 NOM 2.54 REF. L1 2.60 2.75 2.89 φ E1 3.71 3.84 3.96 7.4 REF, 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. e Marking Information: Product: AP80T10 80T10GP YWWSSS ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com Package code GP = RoHS-compliant halogen-free TO-220 Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence 5/5