Datasheet For Ap9575agh-hf-3tr By Advanced Power Electronics Corp. Usa

Transcript

Advanced Power Electronics Corp. AP9575AGH/J-HF-3 P-channel Enhancement-mode Power MOSFET Lower On-resistance D Simple Drive Requirement BV DSS Fast Switching Characteristic RDS(ON) G RoHS-compliant, halogen-free -60V 64mΩ ID -17A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G The AP9575AGH-HF-3 is in the TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP9575AGJ-HF-3 is in the TO-251 through-hole package which is used where a small PCB footprint or an attached heatsink is required. D S TO-252 (H) D (tab) G D TO-251 (J) S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID at TA=25°C ID at TA=100°C Rating Units -60 V ±30 V Continuous Drain Current 3 -17 A Continuous Drain Current 3 -11 A -60 A 36 W 1 IDM Pulsed Drain Current PD at TA=25°C Total Power Dissipation Linear Derating Factor 0.29 W/°C TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB Mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Value Unit 3.5 62.5 °C/W °C/W 110 °C/W Ordering Information AP9575AGH-HF-3TR : in RoHS-compliant halogen-free TO-252, shipped on tape and reel (3000 pcs/reel) AP9575AGJ-HF-3TB : in RoHS-compliant halogen-free TO-251, shipped in tubes (80pcs/tube) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 201105313-3 1/6 Advanced Power Electronics Corp. AP9575AGH/J-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A - - 64 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-9A - 12 - S IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -10 uA Drain-Source Leakage Current (T j=125 C) VDS=-48V, VGS=0V - - -250 uA Gate-Source Leakage VGS=±30V, VDS=0V - - ±100 nA ID=-12A - 35 56 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-48V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 12 - nC VDS=-30V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-12A - 23 - ns td(off) Turn-off Delay Time RG=3.3Ω ,VGS=-10V - 45 - ns tf Fall Time RD=2.5Ω 60 - ns Ciss Input Capacitance VGS=0V - 1440 2300 pF Coss Output Capacitance VDS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Min. Typ. IS=-12A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-12A, VGS=0V, - 43 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 75 - nC Notes: 1.Pulse width limited by safe operating area 2.Pulse test - pulse width < 300µs, duty cycle < 2% 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/6 Advanced Power Electronics Corp. AP9575AGH/J-HF-3 Typical Electrical Characteristics 60 40 -10V -7.0V 40 -5.0V -4.5V 20 V G =-3.0V 30 -5.0V 20 -4.5V V G =- 4 .0V 10 0 0 0 2 4 6 8 0 10 2 -V DS , Drain-to-Source Voltage (V) 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 210 2.0 I D = -9 A T C =25 ° C I D = - 12 A V G =-10V 1.8 Normalized RDS(ON) 170 RDS(ON) (mΩ ) -10V -7.0V TC=150oC -ID , Drain Current (A) -ID , Drain Current (A) T C =25 o C 130 90 1.6 1.4 1.2 1.0 0.8 0.6 50 0.4 2 4 6 8 10 -50 50 100 150 Fig 4. Normalized On-Resistance vs. Junction Temperature 16.0 3.0 12.0 2.5 -VGS(th) (V) -IS(A) Fig 3. On-Resistance vs. Gate Voltage T j =150 o C 0 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) T j =25 o C 8.0 4.0 2.0 1.5 0.0 1.0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature 3/6 Advanced Power Electronics Corp. AP9575AGH/J-HF-3 12 2400 10 2000 8 f=1.0MHz 1600 I D = -12A V DS = -48V C (pF) -VGS , Gate to Source Voltage (V) Typical Electrical Characteristics (cont.) 6 C iss 1200 4 800 2 400 0 0 0 20 10 40 30 C oss C rss 1 50 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Operation in this area limited by RDS(ON) 100us -ID (A) 10 1ms 10ms 100ms DC 1 o T C =25 C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 -ID , Drain Current (A) V DS = -5V T j =25 o C VG T j =150 o C QG 20 -10V QGS QGD 10 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com Fig 12. Gate Charge Waveform 4/6 Advanced Power Electronics Corp. AP9575AGH/J-HF-3 Package Dimensions: TO-252 D D1 E2 E3 B1 Millimeters SYMBOLS F1 e E1 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Marking Information Laser Marking Product: AP9575A 9575AGH YWWSSS ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com Package code GH = RoHS-compliant halogen-free TO-252 Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence 5/6 Advanced Power Electronics Corp. AP9575AGH/J-HF-3 Package Dimensions: TO-251 D Millimeters A SYMBOLS c1 D1 E2 E1 E A1 B2 F B1 c e MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.40 0.60 0.80 B2 0.60 0.85 1.05 c c1 0.40 0.50 0.60 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 4.80 5.20 5.50 E 6.70 7.00 7.30 E1 5.40 5.60 5.80 E2 1.30 1.50 1.70 e ---- 2.30 ---- F 7.00 8.30 9.60 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. e Marking Information Product: AP9575A 9575AGJ YWWSSS ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com Package Code GJ = RoHS-compliant halogen-free TO-251 Date Code (YWWSSS) Y : Last digit of the year WW : Work week SSS : Lot code sequence 6/6