Transcript
AP9974GH/J-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low On-resistance
BVDSS
D
60V
RDS(ON)
Single Drive Requirement Fast Switching Performance
ID
G
RoHS Compliant & Halogen-Free
10.5m 74A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
G
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9974GJ) are available for low-profile applications.
G
D
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
74
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
48
A
1
IDM
Pulsed Drain Current
300
A
PD@TC=25
Total Power Dissipation
104
W
Linear Derating Factor
0.8
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c
Value
Parameter Maximum Thermal Resistance, Junction-case 3
Units
1.2
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
1 200908202
AP9974GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
VGS=10V, ID=45A
-
-
10.5
m
VGS=4.5V, ID=30A
-
-
15
m
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
50
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V
-
-
250
uA
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
43
69
nC
o
IGSS
Gate-Source Leakage 2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
31
-
nC
VDS=30V
-
14
-
ns
-
48
-
ns
-
42
-
ns
67
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=1
-
Ciss
Input Capacitance
VGS=0V
-
3180 5100
pF
Coss
Output Capacitance
VDS=25V
-
495
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
460
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
1.5
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
45
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
40
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP9974GH/J-HF 250
120
T C =25 o C
100
ID , Drain Current (A)
ID , Drain Current (A)
200
5.0V 150
4.5V 100
80
60
40
V G = 3.0 V V G =3.0V
50
20
0
0
0
1
2
3
0
4
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
2.0
I D = 30 A
I D = 45 A V G =10V
T C =25 o C )
Normalized RDS(ON)
10
RDS(ON) (m
10 V 7 .0V 5.0 V 4.5 V
T C =150 o C
10V 7 .0V
8
1.6
1.2
0.8
6
trr
0.4
4
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
o
Qrr
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
50
1.6
o
Normalized VGS(th) (V)
40
o
T j =150 C
T j =25 C
IS(A)
30
20
1.2
0.8
0.4 10
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP9974GH/J-HF f=1.0MHz 14
10000
I D = 30 A
V DS = 30 V V DS = 38 V V DS = 48 V
10
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
1000
C oss C rss
4
2
0
100 0
20
40
60
80
1
100
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
ID (A)
100us 1ms
10
10ms 100ms DC
1
o
T C =25 C Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
Operation in this area limited by RDS(ON)
0.2
0.1
0.1 0.05
PDM
t
0.02
T
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1 0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Qrr
1
Fig 10. Effective Transient Thermal Impedance
100
T j =25 o C
V DS =5V
T j =150 o C
VG
ID , Drain Current (A)
80
QG 4.5V
60
QGS
QGD
40
20
Charge
Q
0 0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
