Transcript
AP9997GP RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D
RDS(ON)
Lower Gate Charge Fast Switching Characteristic
ID
G
100V 120m 11A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220(P) S
The TO-220 package is widely preferred for commercial-industrial through-hole applications.
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
11
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
7
A
30
A
34.7
W
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
3.6
/W
62
/W
1 200812242
AP9997GP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
100
-
-
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=8A
-
-
120
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
7.3
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=150 C) VDS=80V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=10A
-
13
21
nC
o
IGSS
2
V m
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
2.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6
-
nC
VDS=50V
-
5
-
ns
-
17
-
ns
-
15
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=10A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=5
-
4.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=25V
-
65
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
IS=10A, VGS=0V
-
-
1.3
V
IS=10A, VGS=0V
-
41
-
ns
dI/dt=100A/µs
-
73
-
nC
VGS=10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP9997GP 20
20
12
8
V G = 3 .0V
4
10 V 7 .0 V 5.0 V
16
ID , Drain Current (A)
16
ID , Drain Current (A)
T C = 150 o C
10 V 7 .0 V 5.0 V 4.5 V
T C = 25 o C
4.5 V 12
8
V G = 3.0 V
4
0
0 0
1
2
3
4
0
5
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
150
2.4
I D =8A
I D =8A V G =10V
T C =25 o C
140
120
Normalized RDS(ON)
)
130
RDS(ON) (m
2.0
110
1.6
1.2
0.8 100
90
0.4 2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6
10
6
T j =150 o C
Normalized VGS(th) (V)
IS(A)
8
T j =25 o C
4
1.2
0.8
0.4 2
0.0
0 0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP9997GP
10
C iss
8
I D = 10 A V DS = 80 V
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
12
6
100
C oss C rss
4
2
0
10 0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
10
ID (A)
100us
1
1ms 10ms 100ms DC
o
T c =25 C Single Pulse
Duty factor=0.5
0.2
0.1
0.1 0.05
PDM
t
0.02
T 0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1 0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220 E1
A
E
Millimeters
SYMBOLS
L2
L5
c1
D L4
b1
L3
MIN
NOM
MAX
A
4.25
4.48
4.70
b b1 c c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.60
3.10
3.60
L4
14.70
15.50
16.00
L1
L5
L
D
c
b
6.30
6.50
6.70
3.50
3.70
3.90
8.40
8.90
9.40
1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220 Part Number
Package Code 9997GP
LOGO YWWSSS Date Code (ywwsss) Y Last Digit Of The Year WW Week SSS Sequence
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