Transcript
Advanced Power Electronics Corp.
AP99T06GP-3
N-channel Enhancement-mode Power MOSFET Simple Drive Requirement
D
BV DSS
Lower On-Resistance
60V
RDS(ON)
Fast Switching Performance G
ID
RoHS-compliant
4.2mΩ 120A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP99T06GP-3 is in the TO-220 package, which is widely used for commercial and industrial applications, and is well-suited for low voltage applications such as DC/DC converters and motor drives. The TO-220 through-hole package is often used where a small PCB footprint or an attached heatsink is required.
G
D
TO-220 (P) S
Absolute Maximum Ratings Symbol
Rating
Units
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID at TC=25°C
Continuous Drain Current (Chip)
190
A
ID at TC=25°C
Continuous Drain Current 3
120
A
3
120
A
Parameter
VDS
ID at TC=100°C
Continuous Drain Current
IDM
Pulsed Drain Current 1
480
A
PD at TC=25°C
Total Power Dissipation
300
W
TSTG
Storage Temperature Range
-55 to 175
°C
TJ
Operating Junction Temperature Range
-55 to 175
°C
Thermal Data Parameter
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.5
°C/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
°C/W
Ordering Information AP99T06GP-3TB
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
RoHS-compliant TO-220, shipped in tubes
200907092-3
1/5
Advanced Power Electronics Corp.
AP99T06GP-3
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage 2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=40A
-
-
4.2
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
70
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= ±20V, VDS=0V
-
-
±100
nA
ID=30A
-
91
145
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
17
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
47
-
nC
VDS=30V
-
19
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
78
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω ,VGS=10V
-
38
-
ns
tf
Fall Time
RD=1.0Ω
-
60
-
ns
Ciss
Input Capacitance
VGS=0V
-
3500 5600
pF
Coss
Output Capacitance
VDS=25V
-
1120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
315
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.1
Ω
Min.
Typ.
Source-Drain Diode Symbol
Parameter 2
VSD
Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Test Conditions
Max. Units
IS=40A, VGS=0V
-
-
1.3
V
IS=10A, VGS=0V,
-
75
-
ns
dI/dt=100A/µs
-
170
-
nC
Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300µs , duty cycle < 2% 3. Limited by package to 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
2/5
Advanced Power Electronics Corp.
AP99T06GP-3
Typical Electrical Characteristics 300
160
ID , Drain Current (A)
ID , Drain Current (A)
250
200
150
V GS =6.0V
100
10V 9.0V 8.0V 7.0V V GS =6.0V
T C = 175 o C
10V 9.0V 8.0V 7.0V
T C = 25 o C
120
80
40 50
0
0 0
1
2
3
4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics 2.4
8
I D =30A
I D =40A V G =10V
o
T C =25 C Normalized RDS(ON)
RDS(ON) (mΩ )
2.0
6
4
1.6
1.2
0.8
0.4
2 5
6
7
8
9
-50
10
0
Fig 3. On-Resistance v.s. Gate Voltage
100
150
200
Fig 4. Normalized On-Resistance vs. Junction Temperature 1.6
Normalized VGS(th) (V)
40
30
IS(A)
50
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
T j =175 o C
T j =25 o C
20
1.2
0.8
0.4
10
0
0.0 0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
1.4
-50
0
50
100
150
200
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage vs. Junction Temperature
3/5
Advanced Power Electronics Corp.
AP99T06GP-3
Typical Electrical Characteristics (cont.) 12
f=1.0MHz
5000
V DS =30V V DS =36V V DS =48V
10
4000
C iss
8 3000
C (pF)
VGS , Gate to Source Voltage (V)
I D = 30 A
6
2000 4
1000
C oxx
2
C rss 0
0 0
20
40
60
80
100
1
120
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics 1
Operation in this area limited by RDS(ON)
100us
ID (A)
100
1ms 10ms 100ms
10
DC
o
T c =25 C Single Pulse
Normalized Thermal Response (Rthjc)
1000
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t 0.02
T
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
Charge
Q
Fig 12. Gate Charge Waveform
4/5
Advanced Power Electronics Corp.
AP99T06GP-3
Package Dimensions: TO-220 E
A
E1
Millimeters
SYMBOLS
φ
MIN
L1 L5 c1
D1 D L4
4.40
4.60
4.80
b D c E
0.76
0.88
1.00
8.60
8.80
9.00
0.36
0.43
0.50
9.80
10.10
10.40
L4
14.70
15.00
15.30
L5
6.20
6.40
6.60
5.10 REF.
c1
1.25
1.35
1.45
b1
1.17
1.32
1.47
L
13.25
13.75
14.25
e
L
c
b
MAX
A
D1
b1
NOM
2.54 REF.
L1
2.60
2.75
2.89
φ E1
3.71
3.84
3.96
7.4 REF,
1. All dimensions are in mllimeters. 2. Dimensions do not include mold protrusions.
e
Marking Information: TO-220 Product: AP99T06
99T06GP YWWSSS
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
Package code GP = RoHS-compliant TO-220
Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence
5/5
