Transcript
UNISONICTECHNOLOGIESCO., LTD BC807/BC808
PNP SILICON TRANSISTOR
SWI T CH I N G AN D AM PLI FI ER APPLI CAT I ON S
FEAT U RES
* Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818
ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free BC807L-x-AE3-R BC807G-x-AE3-R BC808L-x-AE3-R BC808G-x-AE3-R BC807L-x-AL3-R BC807G-x-AL3-R BC808L-x-AL3-R BC808G-x-AL3-R
Package SOT-23 SOT-23 SOT-323 SOT-323
Pin Assignment 1 2 3 E B C E B C E B C E B C
Packing Tape Reel Tape Reel Tape Reel Tape Reel
M ARK I N G 807-16
807-25
807-40
808-16
808-25
808-40
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
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BC807/BC808
PNP SILICON TRANSISTOR
ABSOLU T E M AX I M U M RAT I N GS (TA=25C, unless otherwise specified) PARAMETER
SYMBOL
RATINGS UNIT -50 V Collector-Emitter Voltage VCES -30 V -45 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -800 mA Collector Dissipation PC 310 mW Junction Temperature TJ +150 C Storage Temperature TSTG -65 ~ +150 C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. BC807 BC808 BC807 BC808
ELECT RI CAL CH ARACT ERI ST I CS (TA=25C, unless otherwise noted) PARAMETER
SYMBOL
BC807 Collector-Emitter Breakdown Voltage BC808 BC807 Collector-Emitter Breakdown Voltage BC808 Emitter-Base Breakdown Voltage Collector Cut-OFF Current Emitter Cut-OFF Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance
TEST CONDITIONS
BVCEO
IC=-10mA, IB=0
BVCES
IC=-0.1mA, VBE=0
BVEBO ICES IEBO hFE1 hFE2 VCE(SAT) VBE(ON) fT Cob
IE=-0.1mA, IC=0 VCE=-25V, VBE=0 VEB=-4V, IC=0 IC=-100mA, VCE=-1V IC=-300mA, VCE=-1V IC=-500mA, IB=-50mA IC=-300mA, VCE=-1V VCE=-5V, IC=-10mA, f=50MHz VCB=-10V, f=1MHz
MIN -45 -25 -50 -30 -5
TYP
100 60
MAX UNIT V V V V V -100 nA -100 nA 630 -0.7 -1.2
100 12
V V MHz pF
CLASSI FI CAT I ON OF h FE RANK hFE1 hFE2
16 100-250 60-
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
25 160-400 100-
40 250-630 170-
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BC807/BC808 T Y PI CAL CH ARACT ERI ST I CS
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
DC Current Gain 1000
-10
PULSE
VCE=-2.0V
IC=10IB PULSE
VCE=-1.0V
100
VBE(SAT)
-1
10
-0.1 VCE(SAT)
1 -0.1
-1
-10
-100
-1000
-0.01 -0.1
Collector Current, IC(mA)
-1000
100
-1000
f=1.0MHz Capacitance, Cib, Cob (pF)
VCE=-1V PULSE -100
-10
-1
-0.1 -0.4
-1 -10 -100 Collector Current, IC(mA)
Input Output Capacitance
Base-Emitter On Voltage
Collect current, IC(mA)
PNP SILICON TRANSISTOR
-0.5
-0.6
-0.7
-0.8
-0.9
Base-Emitter Voltage, VBE (V)
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
Cib Cob 10
1 -0.1
-100 -1 -10 Collector-Base Voltage, VCB (V) Emitter-Base Voltage, VEB (V)
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BC807/BC808 T Y PI CAL CH ARACT ERI ST I CS(Cont .) Current Gain Bandwidth Product Gain Bandwidth Product, fT (MHz)
PNP SILICON TRANSISTOR
1000 VCE=-5.0V
100
10 -1
-10 Collector Current, IC (mA)
-100
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
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