Transcript
MITSUBISHI HVIGBT MODULES
CM1200HC-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HC-66H
● IC ................................................................ 1200A ● VCES ....................................................... 3300V ● Insulated Type ● 1-element in a Pack ● AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
190 ±0.5 171 ±0.1 57 ±0.1
57 ±0.1
6 - M8 NUTS
57 ±0.1
C
C
C
E
E
E
20 –0.2
+0.1
C
C 40 ±0.2
C
CM
E C
E
E
124 ±0.1 140 ±0.5
C
G E
E
CIRCUIT DIAGRAM
G
20.25 ±0.2 8 - φ7 ±0.1 MOUNTING HOLES
41.25 ±0.3 79.4 ±0.3
screwing depth min. 16.5
13 ±0.2
40 ±0.3
15 ±0.2
LABEL
29.5 ±0.5
5.2 ±0.2 5 ±0.15
screwing depth min. 7.7
61.5 ±0.3
28 +10
61.5 ±0.3
38 +10
3 - M4 NUTS
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso tpsc
Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width
Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 100°C Pulse
(Note 1)
Pulse TC = 25°C, IGBT part
(Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 2200V, VCES ≤ 3300V, VGE = 15V Tj = 125°C
Ratings
Unit
3300 ±20 1200 2400 1200 2400 14700 –40 ~ +150 –40 ~ +125 –40 ~ +125 6000
V V A A A A W °C °C °C V
10
µs
ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg
Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge
V EC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4.
VCE = VCES, VGE = 0V, Tj = 25°C
Min —
Limits Typ —
Max 15
IC = 120mA, VCE = 10V, Tj = 25°C
5.0
6.0
7.0
V
— — — — — — — — — — — — — — — — — —
— 3.30 3.60 180 18.0 5.4 8.6 2.80 2.70 — — 1.60 — — 1.55 — 800 0.90
0.5 4.20 — — — — — 3.60 — 1.60 1.00 — 2.50 1.00 — 1.40 — —
µA
Item
Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy
Conditions
VGE = VGES, VCE = 0V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 125°C
(Note 4) (Note 4)
VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 1650V, IC = 1200A, VGE = 15V, Tj = 25°C IE = 1200A, VGE = 0V, Tj = 25°C (Note 4) IE = 1200A, VGE = 0V, Tj = 125°C (Note 4) VCC = 1650V, IC = 1200A, VGE = ±15V RG(on) = 1.6Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 1200A, VGE = ±15V RG(off) = 1.6Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 1200A, VGE = ±15V RG(on) = 1.6Ω, Tj = 125°C, Ls = 100nH Inductive load
Unit mA
V nF nF nF µC V µs µs J/pulse µs µs J/pulse µs µC J/pulse
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f)
Item Thermal resistance Contact thermal resistance
Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K
Min — — —
Limits Typ — — 6.0
Max 8.5 17.0 —
Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS Symbol
Item
M
Mounting torque
— CTI da ds LC-E(int) RC-E(int)
Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance
Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw
IGBT part TC = 25°C
Min 7.0 3.0 1.0 — 600 19.5 32.0 — —
Limits Typ — — — 1.5 — — — 10 0.16
Max 13.0 6.0 2.0 — — — — — —
Unit
N·m kg — mm mm nH mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
2400
2400 VCE = 20V
Tj = 125°C 2000 VGE = 20V VGE = 15V
1600
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
2000
VGE = 12V
1200 VGE = 10V 800 VGE = 8V
400
1600
1200
800
400 Tj = 25°C Tj = 125°C
0
1
2
3
4
5
0
6
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
12
6
6 VGE = 15V
EMITTER-COLLECTOR VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0
5
4
3
2
1
5
4
3
2
1 Tj = 25°C Tj = 125°C
Tj = 25°C Tj = 125°C 0
0
400
800
1200
1600
2000
2400
COLLECTOR CURRENT (A)
0
0
400
800
1200
1600
2000
2400
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS (TYPICAL)
GATE CHARGE CHARACTERISTICS (TYPICAL)
103
20 VGE = 0V, Tj = 25°C f = 100kHz
7 5
VCC = 1650V, IC = 1200A Tj = 25°C
3
CAPACITANCE (nF)
GATE-EMITTER VOLTAGE (V)
Cies
2
102 7 5 3 2
Coes 101 7 5
Cres
16
12
8
4
3 2
100 -1 10
5 7 101
2 3
0
5 7 102
0
3
6
9
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 6
VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 1.6Ω Tj = 125°C, Inductive load
2.5
SWITCHING ENERGIES (J/pulse)
2 3
VCC = 1650V, IC = 1200A VGE = ±15V Tj = 125°C, Inductive load
Eon 5 Eoff
2
1.5
1
Erec
SWITCHING ENERGIES (J/pulse)
3
5 7 100
2 3
Eon
4
3 Eoff
2
0.5
1
0
0
Erec 0
400
800
1200
1600
2000
2400
COLLECTOR CURRENT (A)
0
5
10
15
20
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
102 7 5
102
VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 1.6Ω Tj = 125°C, Inductive load
7 5
REVERSE RECOVERY TIME (µs)
3
SWITCHING TIMES (µs)
2
101 7 5
td(off)
3 2
td(on)
100 7 5
tr
3
tf
2
10-1 1 10
2 3
5 7 102
2 3
5 7 103
2 3
5 7 104
COLLECTOR CURRENT (A)
104
VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 1.6Ω Tj = 125°C, Inductive load
7 5
3
3
2
2
101
103
7 5
7 5
lrr
3
3
2
2
100
102
7 5
7 5
trr
3
3
2
2
10-1 1 10
2 3
5 7 102
2 3
5 7 103
REVERSE RECOVERY CURRENT (A)
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL)
101
2 3
5 7 104
EMITTER CURRENT (A)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2
1.0
Single Pulse, TC = 25°C Rth(j–c)Q = 8.5K/kW Rth(j–c)R = 17K/kW
0.8
0.6
0.4
0.2
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA)
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000
3000
REVERSE RECOVERY CURRENT (A)
VCC ≤ 2200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 1.6Ω
COLLECTOR CURRENT (A)
2500
2000
1500
1000
500
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
VCC ≤ 2200V, di/dt ≤ 5400A/µs Tj = 125°C
2500
2000
1500
1000
500
0
0
1000
2000
3000
4000
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
