Transcript
D package
Part num ber schem e
D T 03 N 12 KNX
JEDEC: TO-200AB
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Transparent view of gate pin terminal 1.47mm .(0.060") DIA..
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1) Package designation 2) Thyristor designation (i.e. SCR) 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier (example: 12 x 100 = 1200) 6) Proprietary suffix
+5
20
Aux., Cathode terminal 6.2mm (0.245") L 4.9mm (0.195") W 0.8mm (0.070") H
Pa r t # D T0 3 N . . se r ie s I T( AVE) 2 8 0 A V D RM V RRM 1 2 0 0 V ~ 2 0 0 0 V
Ph a se Con t r ol Th yr ist or
P WER Semiconductors Inc.
41.9mm (1.65") DIA. MAX
Positioning pin hole 3.5mm (0.140") DIA 1.8mm (0.070") Deep one on each side 28.5mm (1.12")
Features:
19mm DIA (0.750") DIA both sides
X X X X X X
14.2mm (0.56") MAX.
Weight 50g (1.8 oz) 39.6mm (1.56") DIA. MAX
All diffused silicone. Center amplifying gate. Standard recovery time for phase control applications. Disk press package (nick named, Hockey Puck) Metal and ceramic package construction. Double side cooling.
V olt a ge Pa ra m e t e r
Sym bol
Ra t ing
U nit s
Maximum Repetitive Off-State Voltage Notes: 1, 3, 4, 5, 6, 7 Maximum Repetitive Reverse Voltage Notes: 1, 3, 4, 5, 6 Maximum non repetitive Surge of Reverse Voltage Notes: 2, 3, 4, 5, 6 Critical rate of rising off-state Voltage, Linear to 80% of VDRM Note: 2
VDRM VRRM VRSM dv/dt
1200 ~ 2000 1200 ~ 2000 VRRM + 100 200
Volts Volts Volts V/ s
Note 1: TJ 25oC. Note 2: TJ 125oC. Note 5: VDRM and VRRM have IDRM, IRRM of up to 35mA.
Note 3: Measured at the peak of the sine wave, Note 6: VDR and VRR have typical IDR, IRR of 2~7mA.
Specifying voltage: 1200V, DT03N12
1800V, DT03N18 2000V, DT03N20
1400V, DT03N14 1600V, DT03N16
Note 4: Below 0oC derate VDRM and VRRM 10%. Note 7: For DC applications derate VDRM 45%.
Above 2000V inquire for availability.
Ga t e Pa ra m e t e r
Sym bol
Gate Trigger Voltage Note 3
VGT
Maximum Gate Trigger Current Notes 1,3 Minimum Forward Current to Latch on-state Notes 1, 5 Maximum permissible Gate Voltage not to Trigger Notes 1,3 Maximum permissible Gate Current not to Trigger Notes 1, 3 Maximum peak non repetitive Gate Voltage Notes 2, 3 Maximum Negative Gate Voltage Notes 2, 4 Maximum non repetitive Gate Current Notes 2, 3 Maximum Repetitive Gate Current Notes 2, 3 Average Gate Power (recommended) Note 2, 3 Note 1: TJ 25OC.
Ra t ing Temp. -20O C 25O C 125O C
Note 2: TJ 125OC.
IGT IL VGDM IGDM VGM -VGM IGM IGRM PG(AVE)
Note 3: Rectangular pulse, tp [ 8.3 ms.
Typ. 2.3 ~ 2.8 2.0 ~ 2.4 1.9 ~ 2.3
U nit s Max.
Volts
3
300 300 250 10 8.4 5 3.7 1 0.9 ~ 2
Note 4: Rectangular -V DC pulse, tp [ 8.3 ms.
mA mA mV mA Volts Volts Amperes Amperes Watts
Note 5: Test conditions: I DC RL = 12 .
These graphs depict a typical device, each device has unique characteristics
M a x im u m n on r e pe t it ive G ATE P OW ER ( P GM )
4 EXCESS POWER TO THE GATE
Instantaneous Gate Voltage ( V )
RECOMMENDED POWER TO THE GATE
TJ -20C TJ 125C TJ 25C
EXCESS POWER TO THE GATE
3
ANODE CATHODE POWER
TRIGGERING ZONE
2 tp GATE TRIGGER PULSE tp = 8.33ms
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100
Instantaneous Gate Voltage ( V )
Ga t e Ch a r a t e r ist ics
RECTANGULAR PULSE, TJ 125 C 1) ~ 8 ms 1) tp = 4 10 Watts 2) tp = 2 ms 20 Watts 3) tp = 1 ms 40 Watts 4) tp = 0.1 ~ 0.5 ms 80 Watts
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VGD IGD 0
100
200
300
400
500
600
700
800
900
1000
Instantaneous Gate Curent (mA)
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e-mail:
[email protected]
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10
100
Instantaneous Gate Current ( A )
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P WER Semiconductors Inc.
D T0 3 N . . se r ie s
Cu r r e n t Pa ra m e t e r
Sym bol
Ra t ing
U nit s
IT(AVE) IT(RMS)
280 440
Amperes Amperes
ITSM 0%VRRM
3.5
kA
ITSM 100%VRRM
3
kA
di/dt IH
300 200
A/ s mA
IDR & IRR
2~5
mA
IDRM & IRRM
25
mA
I2 t, 0% VRR I2 t, [ 80% VRRM QRR
50 35
kA kA Cs
Maximum, Average, On state, Current Notes: 3, 4 Maximum, RMS, On state, Current Notes: 3, 5 Maximum non repetitive, Surge. On state, Current ,with no reverse voltage reapplied. Notes: 2, 4 Maximum non repetitive, Surge, On state, Current, with maximum reverse voltage reapplied. Notes: 2, 4 Critical rate of rising On-state Current, non repetitive Note: 6, 7 Holding Current Notes: 1, 5 IDR = Repetitive, Off-State, leakage Current (typical) Note: 1 IRR = Repetitive, Reverse, leakage Current. (typical) Note: 1 IDRM = Maximum (threshold), Repetitive, Off-State, Current. Note: 1 IRRM = Maximum (threshold), Repetitive, Reverse, Current. Note: 1 Fuse’s absolute maximum I 2 t with no reverse voltage reapplied
Note: 2, 4
Fuse’s absolute maximum I 2 t with up to 80% of VRRM reapplied Note: 2, 4
Reverse Recovery Charge (CS = Stored Charge) Note 1: TJ 25OC. Note 2: TJ 125OC. Note 5: Test conditions: I DC RL = 12 .
Consult factory Note 4: 180O conduction, 60Hz sine wave. Note 7: In addition to 0.2 F and 20 snubber circuit
Note 3: TCase 55OC, double side air cooled. Note 6: Switching from VDRM [ 1000V
These graphs depict a typical device, each device has unique characteristics
O N - STATE V OLTAGE
Instantaneous On-State Voltage ( V )
3.0
D ROP
( VT )
O
TJ 125 C PULSE TEST
2.5 2.0
VTM
1.5 1.0 0.5 100
1000
10000
Instantaneous On-State Current ( A )
M AXI M UM O N - STATE P OW ER D I SSI PATI ON
M AXI M UM O N - STATE P OW ER D I SSI PATI ON
300
750
100% DC 50% 33%
POWER DISSIPATION ( W )
POWER DISSIPATION ( W )
Sinusoidal waveform, 60 Hz. Double side cooled Curves, Degrees On-state
180O
500 120O 60O
90O
30O
250
25%
200 12.5%
100
Rectangular waveform, 60 Hz. Double side cooled Curves, Percent of On-state 0
0
0
100 200 300 AVERAGE ON-STATE CURRENT ( A )
M AXI M UM
PERM I SSI BLE
0
400
CASE T EM PERATURE
M AXI M UM
110 100 90
Degrees of On-state
80 30O
70
60O
90O
O
120
60
180O
50 100
300 200 AVERAGE ON-STATE CURRENT ( A )
400
CASE TEMPERATURE ( C )
Sinusoidal waveform, 60 Hz. Double side cooled Curves, Degrees On-state
120
40 0
PERM I SSI BLE
CASE T EM PERATURE
130 TC MEASURED AT AUX., CAHTODE CONNECTION
CASE TEMPERATURE ( C )
TC MEASURED AT AUX., CAHTODE CONNECTION
130
400
100 200 300 AVERAGE ON-STATE CURRENT ( A )
Rectangular waveform, 60 Hz. Double side cooled Curves, Percent of On-state
120 110 100
100 t =% T Duty Cycle Formula
90
t T
80 70 60
33%
50 40 0
12.5%
100
100% DC
50%
25%
200 300 AVERAGE ON-STATE CURRENT ( A )
Th e r m a l & M e ch a n ica l Pa ra m e t e r Operating Temperature Range Maximum Thermal resistance, Junction to Case Notes:1, 3, 5 Maximum Thermal resistance, Case to Heat Sink Notes: 1, 2, 3, 4, 5
Sym bol
Ra t ing
TJ Rth-J-C Rth-C-hs
-40O ~ 125O 0.06 0.03 320 ~ 400 700 ~ 900
Mounting Pressure Note 1: Recommended mounting pressure applied Note 4: Case Temperature measured at aux., cathode
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Note 2: Mounting surfaces flat and greased Note 5: 180O on-state
e-mail:
[email protected]
U nit s O
Celsius O C/W O C/W kg lb.
Note 3: Double side cooled
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