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Datasheet For E30a2cps By Kec Corp.

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SEMICONDUCTOR E30A2CPS, E30A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. Reverse Voltage : 200V(Min.) POLARITY L2 E F1 E30A2CPS (+ Type) B L1 G E30A2CPR (- Type) A MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT VRRM 200 V Non-Repetitive Peak Reverse Voltage PRM 1.35 (Pulse duration 30 S Non-repetitive) kW Average Forward Current IF(AV) 30 A Peak 1 Cycle Surge Current IFSM 350 (10mS Condition Half sine wave 1 cycle) A Tj -40 200 Tstg -40 200 Repetitive Peak Reverse Voltage Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC DIM MILLIMETERS DIM MILLIMETERS 0.32 F1 Φ11.7+0.1/-0 A 3.1 F2 3.85+0/-0.2 B _ 0.1 G 0.5 D Φ1.45 + L1 8.4 MAX E 1.55 DIM TYPE POLARITY S L2 R MILLIMETERS 17.5+0/-1.5 21.5+0/-1.5 PF ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - 1.17 V 200 - - V Peak Forward Voltage VFM IFM=100A Reverse Voltage VRM IR=5mA Repetitive Peak Reverse Current IRRM VR=200V - - 50 A IF=-IR 100mA - - 15 S - - 140 mV Ta=150 , VR=VRM - - 2.5 mA Junction to Case - 0.86 0.86 Junction to Fin - 1.07 1.07 trr Reverse Recovery Time Transient Thermal Resistance Reverse Leakage Current Under High Temperature HIR Rth Temperature Resistance 1998. 2. 19 VF Revision No : 0 IFM=100A, Im=100mA, Pt=100mS /W 1/1