Transcript
Monolithic Hall Effect ICs
EM-6781
Shipped in packet-tape reel(3000pcs/Reel)
EM-6781 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC.
Omnipolar Hall
Supply Voltage
Effect Switch
1.6∼5.5Ｖ
Hall Element Pulse Excitation
High Sensitivity
Output
Bop：3mT
CMOS
SMT
●Operational Characteristics Vout VOH
H
Marking 1：VDD 2：VSS
3
1
BhS
BhN VOL
3：OUT N or S
BopN BrpN 0 N-pole
L BrpS
BopS
S-pole
●Functional Block Diagram
Magnetic flux density
1:VDD
Switch
Item
Symbol
Limit
Unit
Supply Voltage VDD
−0.1 ∼ 6.0
V
Output Current Iout
±0.5
mA
Operating Temperature Range Topr
−30 ∼ 85
℃
Storage Temperature Range Tstg
−40 ∼ 125
Dynamic Offset Cancellator
●Absolute Maximum Ratings（Ta=25℃）
Pulse Hall Chopper Amplifier Regulator Element Stabilizer
℃
●Magnetic q and Electrical Characteristics（Ta=25℃ VDD=1.85V） Item Supply Voltage
Symbol
Conditions
VDD
Min.
Typ. Max. Unit
1.6
BOPS Operating Point IBOPNI
1.4*
BrpS Release Point IBrpNI BhS
Hysteresis
IBhNI
P e r i o d
Tp
Output High Voltage
VOH
Io=−0.5mA
Output Low Voltage
VOL
Io=＋0.5mA
Supply Current
IDD
Average
3:OUT
5.5 3.0
4.0
●Magnetic Characteristics w（Ta=−30℃∼85℃ VDD=1.85V） Item
Symbol
Conditions
Min.
Typ. Max. Unit
1.2
3.0
4.4
mT
mT
Release
0.9
2.2
4.1
mT
B S H y s t e r e s i s BhN I h I
0.1
0.8
1.7
mT
3.7*
mT
0.3*
0.8
1.5*
mT
50
100
ms V
0.4
V
9
μA
Note) The above specifications are design targets.
●Application Circuit GND
Bypass Capacitor 0.1μF
VSS EM-6781 VDD
1［mT］=10［Gauss］
OUT
The characteristics with「*」marks are design targets.
VDD
47
2:Vss
BrpS Point IB NI rp
V
2.2
6.5
Output Stage
B S Operating Point IBOPNI OP
1.1
VDD−0.4
Schmitt trigger &Latch
CMOS
EM-6781 •Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the advance written approval of our sales staff. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such applications is understood to be fully at the risk of the customer using our devices or systems.
b ●(For reference only)Land Pattern（Unit:mm)
●Package（Unit:mm)
0.95
1.0±0.1 0.75
f
5°
0.95
0.95
Pin No. Connection Function 1 VDD Supply Voltage 2 VSS GND 3 OUT Output Voltage
●Supply Voltage
●IDD Pulse Driving（VDD=1.85V）
6
50ms
IDD 146μs
5 Supply Voltage［V］
2.60
1.00
1：Vcc 2：GND 3：OUT Note) The sensor center is located within the φ0.3mm circle.
5°
0.70
0.0±0.05
5°
5°
0.3
5°
3 0.3
1.00
0.95
0.70
5°
1
0.3
0.70
3.1±0.1
φ0.3 Sensor Center
5°
0.48
0.11 5°
2.2±0.1
3.0±0.1 0.4 2
i
IDD ON （TYP : 1.8mA）
4 3 2
IDD （TYP : 6.5μA）
1
IDD OFF （TYP : 1.3μA）
0
−40
−20
0
20
40
60
80
time
100
Ambient Temperature［℃］
●Temparature Dependence of Bop. Brp
●Function Timing Chart IDD
Operating Point［mT］
6 4
n
BopS
2
t
B
BrpS
0
Bop
VDD＝1.85V
t
B
o
Brp
BrpN
−2
Vout High
BopN
−4 −6 −50
IDD
0
50
Ambient Temperature［℃］
100
t 48.8μs
Vout High
48.8μs
t
Low
Low
t
t Operating Point Timing
Release Point Timing
This Hall IC’ s ou tp ut is he ld a s in te rn al d ata ju st b efore th e in te rn al circ uit t u r n s O F F ( I D D O F F ) . A n d a f t e r 4 8 . 8 μs , t h e o u t p u t c h a n g e s . N o t e ) 4 8 . 8 μs i n f i g u r e s i s t y p i c a l v a l u e
48
p
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